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Nano Research 2020, 13(8): 2226-2232 https://doi.org/10.1007/s12274-020-2841-6
Research Article | Issue | Published: 05 August 2020

Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks

Show Author's Information Yi Hu1,  Lingyun Mao1,  Xin Yuan1,  Jingyu Lu1,  Renpeng Chen1,  Tao Chen1,  Wenjun Zhang1,  Xiaolan Xue1,  Wen Yan1,  Mohammadreza Shokouhimehr2,  Xiao Li Zhang3,  Zhong Jin1,4( )
Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
Shenzhen Research Institute of Nanjing University, Shenzhen 518063, China
Keywords:
Bi2S3 nanowires, bifurcated junctions, crosslinked networks, flexible optoelectronic devices
Topics:
Bismuth compoundsCrystal atomic structureLayered semiconductorsNanowiresPhotodetectorsPhotonsSemiconducting bismuth compounds SubstratesSulfur compounds
Cite this article:
Hu Y, Mao L, Yuan X, et al. Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks. Nano Research, 2020, 13(8): 2226-2232. https://doi.org/10.1007/s12274-020-2841-6
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Abstract Full text Electronic supplementary material About this article

Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and transparent electrodes. However, for now it is still lack of effective approaches for constructing nanowire bifurcated junctions and crosslinked networks with ordered orientations and high quality. Herein, we report the controlled growth of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks with well-aligned directions and high crystalline degree by utilizing the proportional lattice match between nanowires and substrates. Taking advantages of the "tip-to-stem splice" assembly of individual nanowires, the precise orientation alignments of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks were successfully realized. The controlled growth mechanism and structural evolution process have been elucidated by detailed atomic structure characterizations and modeling. The highly crystal quality and direct energy bandgap of as-assembled photodetectors based on individual bismuth sulfide nanowires enabled high photoresponsivity and fast switch time under light illumination. The three-terminal devices based on nanowire bifurcated junctions present rapid carrier transport across the junction. The flexible photodetectors based on nanowire crosslinked networks show very minimal decay of photocurrent after long-term bending test. This work may provide new insights for the guided construction and regular assembly of low-dimensional ordered functional nanostructures towards advanced nanotechnologies.


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Electronic supplementary material
About this article

Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks

Show Author's information Yi Hu1, Lingyun Mao1, Xin Yuan1, Jingyu Lu1, Renpeng Chen1, Tao Chen1, Wenjun Zhang1, Xiaolan Xue1, Wen Yan1, Mohammadreza Shokouhimehr2, Xiao Li Zhang3, Zhong Jin1,4( )
Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
Shenzhen Research Institute of Nanjing University, Shenzhen 518063, China

Abstract

Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and transparent electrodes. However, for now it is still lack of effective approaches for constructing nanowire bifurcated junctions and crosslinked networks with ordered orientations and high quality. Herein, we report the controlled growth of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks with well-aligned directions and high crystalline degree by utilizing the proportional lattice match between nanowires and substrates. Taking advantages of the "tip-to-stem splice" assembly of individual nanowires, the precise orientation alignments of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks were successfully realized. The controlled growth mechanism and structural evolution process have been elucidated by detailed atomic structure characterizations and modeling. The highly crystal quality and direct energy bandgap of as-assembled photodetectors based on individual bismuth sulfide nanowires enabled high photoresponsivity and fast switch time under light illumination. The three-terminal devices based on nanowire bifurcated junctions present rapid carrier transport across the junction. The flexible photodetectors based on nanowire crosslinked networks show very minimal decay of photocurrent after long-term bending test. This work may provide new insights for the guided construction and regular assembly of low-dimensional ordered functional nanostructures towards advanced nanotechnologies.

Keywords: Bi2S3 nanowires, bifurcated junctions, crosslinked networks, flexible optoelectronic devices

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Publication history
Copyright
Acknowledgements

Publication history

Received: 20 December 2019
Revised: 22 April 2020
Accepted: 30 April 2020
Published: 05 August 2020
Issue date: August 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

This work was supported by the National Key R&D Program (Nos. 2017YFA0208200 and 2016YFB0700600), the Fundamental Research Funds for the Central Universities (No. 0205-14380219), the Projects of the National Natural Science Foundation of China (NSFC) (Nos. 21872069, 51761135104, and 21573108), the Natural Science Foundation of Jiangsu Province (No. BK20180008), and the High-Level Innovation and Entrepreneurship Project of Jiangsu Province of China.

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