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Nano Research 2020, 13(8): 2091-2097 https://doi.org/10.1007/s12274-020-2815-8
Research Article | Issue | Published: 05 August 2020

Vapor phase growth of two-dimensional PdSe2 nanosheets for high-photoresponsivity near-infrared photodetectors

Show Author's Information Weiting Xu1,2,  Jiayang Jiang3,  Huifang Ma2,  Zhengwei Zhang2,  Jia Li2,  Bei Zhao2,  Ruixia Wu2,  Xiangdong Yang2,  Hongmei Zhang2,  Bailing Li2,  Weining Shu1,2,  Zucheng Zhang2,  Bo Li1,2( ),  Yuan Liu1,  Lei Liao3,  Xidong Duan2( )
Hunan Key Laboratory of Two-Dimensional Materials, Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
Keywords:
two-dimensional (2D) materials, chemical vapor deposition, electron mobility, infrared photodetector, PdSe2 nanosheets
Topics:
Chemical vapor depositionInfrared devices NanosheetsPhotodetectorsPhotonsSelenium compounds
Cite this article:
Xu W, Jiang J, Ma H, et al. Vapor phase growth of two-dimensional PdSe2 nanosheets for high-photoresponsivity near-infrared photodetectors. Nano Research, 2020, 13(8): 2091-2097. https://doi.org/10.1007/s12274-020-2815-8
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Abstract Full text Electronic supplementary material About this article

Palladium diselenide (PdSe2), a stable layered material with pentagonal structure, has attracted extensive interest due to its excellent electrical and optoelectronic performance. Here, we report a reliable process to synthesize PdSe2 via chemical vapor deposition (CVD) method. Through systematic regulation of temperature in the growth process, we can tune the thickness, size, nucleation density and morphology of PdSe2 nanosheets. Field-effect transistors based on PdSe2 nanosheets exhibit n-type behavior and present a high electron mobility of 105 cm2·V-1·s-1. The electrical property of the devices after 6 months keeping in the air show little change, implying outstanding air-stability of PdSe2. In addition, PdSe2 near-infrared photodetector shows a photoresponsivity of 660 A·W-1 under 914 nm laser. These performances are better than those of most CVD-grown 2D materials, making ultrathin PdSe2 a highly qualified candidate material for next-generation optoelectronic applications.


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About this article

Vapor phase growth of two-dimensional PdSe2 nanosheets for high-photoresponsivity near-infrared photodetectors

Show Author's information Weiting Xu1,2, Jiayang Jiang3, Huifang Ma2, Zhengwei Zhang2, Jia Li2, Bei Zhao2, Ruixia Wu2, Xiangdong Yang2, Hongmei Zhang2, Bailing Li2, Weining Shu1,2, Zucheng Zhang2, Bo Li1,2( ), Yuan Liu1, Lei Liao3, Xidong Duan2( )
Hunan Key Laboratory of Two-Dimensional Materials, Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China

Abstract

Palladium diselenide (PdSe2), a stable layered material with pentagonal structure, has attracted extensive interest due to its excellent electrical and optoelectronic performance. Here, we report a reliable process to synthesize PdSe2 via chemical vapor deposition (CVD) method. Through systematic regulation of temperature in the growth process, we can tune the thickness, size, nucleation density and morphology of PdSe2 nanosheets. Field-effect transistors based on PdSe2 nanosheets exhibit n-type behavior and present a high electron mobility of 105 cm2·V-1·s-1. The electrical property of the devices after 6 months keeping in the air show little change, implying outstanding air-stability of PdSe2. In addition, PdSe2 near-infrared photodetector shows a photoresponsivity of 660 A·W-1 under 914 nm laser. These performances are better than those of most CVD-grown 2D materials, making ultrathin PdSe2 a highly qualified candidate material for next-generation optoelectronic applications.

Keywords: two-dimensional (2D) materials, chemical vapor deposition, electron mobility, infrared photodetector, PdSe2 nanosheets

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Publication history
Copyright
Acknowledgements

Publication history

Received: 07 February 2020
Revised: 15 April 2020
Accepted: 17 April 2020
Published: 05 August 2020
Issue date: August 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

We acknowledge the support from National Natural Science Foundation of China (Nos. 61804050, 51991340, 51991343, and 51872086), the Fundamental Research Funds of the Central Universities (Nos. 531107051078 and 531107051055), the Double First-Class Initiative of Hunan University (No. 531109100004), the Hunan Key Laboratory of Two-Dimensional Materials (No. 2018TP1010), and the Strategic Priority Research Program of Chinese Academy of Science, Grant (No. XDB30000000).

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