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Nano Research 2020, 13(6): 1644-1650 https://doi.org/10.1007/s12274-020-2787-8
Research Article | Issue | Published: 23 April 2020

Atomic layer deposited 2D MoS2 atomic crystals: From material to circuit

Show Author's Information Hao Liu,  Lin Chen( ),  Hao Zhu,  Qing-Qing Sun( ),  Shi-Jin Ding,  Peng Zhou,  David Wei Zhang
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Keywords:
molybdenum disulfide, atomic layer deposition, field effect transistors, electrical uniformity, logical circuits
Topics:
Atomic layer deposition Chlorine compoundsCrystalsLayered semiconductorsMolybdenum compoundsSilicaWSI circuits
Cite this article:
Liu H, Chen L, Zhu H, et al. Atomic layer deposited 2D MoS2 atomic crystals: From material to circuit. Nano Research, 2020, 13(6): 1644-1650. https://doi.org/10.1007/s12274-020-2787-8
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Abstract Full text Electronic supplementary material About this article

Atomic layer deposition (ALD) can be used for wafer-scale synthesis of 2D materials. In this paper, a novel, reliable, secure, low-cost, and high-efficiency process for the fabrication of MoS2 is introduced and investigated. The resulting 2D materials show high carrier-mobility as well as excellent electrical uniformity. Using molybdenum pentachloride (MoCl5) and hexamethyldisilathiane (HMDST) as ALD precursors, thickness-controlled MoS2 films are uniformly deposited on a 50 mm sapphire and a 100 mm silica substrate. This is done with a high growth-rate (up to 0.90 Å/cycle). Large-scale top-gated FET arrays are fabricated using the films, with a room-temperature mobility of 0.56 cm2/(V·s) and a high on/off current ratio of 106. Excellent electrical uniformity is observed in the whole sapphire wafer. Additionally, logical circuits, including inverters, NAND, AND, NOR, and OR gates, are realized successfully with a high-k HfO2 dielectric layer. Our inverters exhibit a fast response frequency of 50 Hz and a DC-voltage gain of 4 at VDD = 4 V. These results indicate that the new method has the potential to synthesize high quality MoS2 films on a large-scale, with hypo-toxicity and enhanced efficiency, which can facilitate a broader range of applications in the future.


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Electronic supplementary material
About this article

Atomic layer deposited 2D MoS2 atomic crystals: From material to circuit

Show Author's information Hao Liu, Lin Chen( ), Hao Zhu, Qing-Qing Sun( ), Shi-Jin Ding, Peng Zhou, David Wei Zhang
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

Abstract

Atomic layer deposition (ALD) can be used for wafer-scale synthesis of 2D materials. In this paper, a novel, reliable, secure, low-cost, and high-efficiency process for the fabrication of MoS2 is introduced and investigated. The resulting 2D materials show high carrier-mobility as well as excellent electrical uniformity. Using molybdenum pentachloride (MoCl5) and hexamethyldisilathiane (HMDST) as ALD precursors, thickness-controlled MoS2 films are uniformly deposited on a 50 mm sapphire and a 100 mm silica substrate. This is done with a high growth-rate (up to 0.90 Å/cycle). Large-scale top-gated FET arrays are fabricated using the films, with a room-temperature mobility of 0.56 cm2/(V·s) and a high on/off current ratio of 106. Excellent electrical uniformity is observed in the whole sapphire wafer. Additionally, logical circuits, including inverters, NAND, AND, NOR, and OR gates, are realized successfully with a high-k HfO2 dielectric layer. Our inverters exhibit a fast response frequency of 50 Hz and a DC-voltage gain of 4 at VDD = 4 V. These results indicate that the new method has the potential to synthesize high quality MoS2 films on a large-scale, with hypo-toxicity and enhanced efficiency, which can facilitate a broader range of applications in the future.

Keywords: molybdenum disulfide, atomic layer deposition, field effect transistors, electrical uniformity, logical circuits

References(35)

[1]
Li, L. K.; Yu, Y. J.; Ye, G. J.; Ge, Q. Q.; Ou, X. D.; Wu, H.; Feng, D. L.; Chen, X. H.; Zhang, Y. B. Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372-377.
Google Scholar
[2]
Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L. J.; Loh, K. P.; Zhang, H. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 2013, 5, 263-275.
Google Scholar
[3]
Huang, X.; Zeng, Z. Y.; Zhang, H. Metal dichalcogenide nanosheets: Preparation, properties and applications. Chem. Soc. Rev. 2013, 42, 1934-1946.
Google Scholar
[4]
Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699-712.
Google Scholar
[5]
Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
Google Scholar
[6]
Lin, K. I.; Chen, Y. J.; Wang, B. Y.; Cheng, Y. C.; Chen, C. H. Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films. J. Appl. Phys. 2016, 119, 115703.
Google Scholar
[7]
Wang, Z. W.; He, X.; Zhang, X. X.; Alshareef, H. N. Hybrid van der Waals p-n heterojunctions based on SnO and 2D MoS2. Adv. Mater. 2016, 28, 9133-9141.
Google Scholar
[8]
Lee, J.; Mak, K. F.; Shan, J. Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nat. Nanotechnol. 2016, 11, 421-425.
Google Scholar
[9]
Kappera, R.; Voiry, D.; Yalcin, S. E.; Branch, B.; Gupta, G.; Mohite, A. D.; Chhowalla, M. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 2014, 13, 1128-1134.
Google Scholar
[10]
Lee, Y. H.; Yu, L. L.; Wang, H.; Fang, W. J.; Ling, X.; Shi, Y. M.; Lin, C. T.; Huang, J. K.; Chang, M. T.; Chang, C. S. et al. Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. Nano. Lett. 2013, 13, 1852-1857.
Google Scholar
[11]
Liu, H. F.; Wong, S. L.; Chi, D. Z. CVD growth of MoS2-based two-dimensional materials. Chem. Vapor Deposit. 2015, 21, 241-259.
Google Scholar
[12]
Schmidt, H.; Wang, S. F.; Chu, L. Q.; Toh, M.; Kumar, R.; Zhao, W. J.; Neto, A. H. C.; Martin, J.; Adam, S.; Özyilmaz, B. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano. Lett. 2014, 14, 1909-1913.
Google Scholar
[13]
Yu, L.; El-Damak, D.; Ha, S.; Ling, X.; Lin, Y.; Zubair, A.; Zhang, Y.; Lee, Y. H.; Kong, J.; Chandrakasan, A. Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics. In Proceedings of 2015 IEEE International Electron Devices Meeting, Washington, 2015, pp 32.3.1-32.3.4.
[14]
Venables, J. A.; Spiller, G. D. T. Nucleation and growth of thin films. In Surface Mobilities on Solid Materials. Binh, W. T., Ed.; Springer: Boston, 1983; pp 341-404.
[15]
Pyeon, J. J.; Kim, S. H.; Jeong, D. S.; Baek, S. H.; Kang, C. Y.; Kim, J. S.; Kim, S. K. Wafer-scale growth of MoS2 thin films by atomic layer deposition. Nanoscale 2016, 8, 10792-10798.
Google Scholar
[16]
Tan, L. K.; Liu, B.; Teng, J. H.; Guo, S. F.; Low, H. Y.; Loh, K. P. Atomic layer deposition of a MoS2 film. Nanoscale 2014, 6, 10584-10588.
Google Scholar
[17]
Yu, Y. F.; Li, C.; Liu, Y.; Su, L. Q.; Zhang, Y.; Cao, L. Y. Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 2013, 3, 1866.
Google Scholar
[18]
Zhang, T. B.; Wang, Y.; Xu, J.; Chen, L.; Zhu, H.; Sun, Q. Q.; Ding, S. J.; Zhang, D. W. High performance few-layer MoS2 transistor arrays with wafer level homogeneity integrated by atomic layer deposition. 2D Mater. 2017, 5, 015028.
Google Scholar
[19]
Shi, M. L.; Chen, L.; Zhang, T. B.; Xu, J.; Zhu, H.; Sun, Q. Q.; Zhang, D. W. Top-down integration of molybdenum disulfide transistors with wafer-scale uniformity and layer controllability. Small 2017, 13, 1603157.
Google Scholar
[20]
Jeon, W.; Cho, Y.; Jo, S.; Ahn, J. H.; Jeong, S. J. Wafer-scale synthesis of reliable high-mobility molybdenum disulfide thin films via inhibitor-utilizing atomic layer deposition. Adv. Mater. 2017, 29, 1703031.
Google Scholar
[21]
Kang, K.; Xie, S.; Huang, L. J.; Han, Y. M.; Huang, P. Y.; Mak, K. F.; Kim, C. J.; Muller, D.; Park, J. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656-660.
Google Scholar
[22]
Carmalt, C. J.; Dinnage, C. W.; Parkin, I. P.; Peters, E. S.; Molloy, K.; Colucci, M. A. The use of hexamethyldisilathiane for the synthesis of transition metal sulfides. Polyhedron 2003, 22, 1255-1262.
Google Scholar
[23]
Cao, Q.; Dai, Y. W.; Xu, J.; Chen, L.; Zhu, H.; Sun, Q. Q.; Zhang, D. W. Realizing stable p-type transporting in two-dimensional WS2 films. ACS Appl. Mater. Interfaces 2017, 9, 18215-18221.
Google Scholar
[24]
Eda, G.; Yamaguchi, H.; Voiry, D.; Fujita, T.; Chen, M. W.; Chhowalla, M. Photoluminescence from chemically exfoliated MoS2. Nano. Lett. 2011, 11, 5111-5116.
Google Scholar
[25]
Kim, Y.; Bark, H.; Ryu, G. H.; Lee, Z.; Lee, C. Wafer-scale monolayer MoS2 grown by chemical vapor deposition using a reaction of MoO3 and H2S. J. Phys.: Cond. Matter 2016, 28, 184002.
Google Scholar
[26]
Wu, D. Z.; Zhang, Z. Y.; Lv, D. H.; Yin, G. L.; Peng, Z. J.; Jin, C. H. High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS2. Mater. Express 2016, 6, 198-204.
Google Scholar
[27]
Xia, F. N.; Perebeinos, V.; Lin, Y. M.; Wu, Y. Q.; Avouris, P. The origins and limits of metal-graphene junction resistance. Nat. Nanotechnol. 2011, 6, 179-184.
Google Scholar
[28]
Franklin, A. D.; Chen, Z. H. Length scaling of carbon nanotube transistors. Nat. Nanotechnol. 2010, 5, 858-862.
Google Scholar
[29]
Wachter, S.; Polyushkin, D. K.; Bethge, O.; Mueller, T. A microprocessor based on a two-dimensional semiconductor. Nat. Commun. 2017, 8, 14948.
Google Scholar
[30]
Radisavljevic, B.; Whitwick, M. B.; Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 2011, 5, 9934-9938.
Google Scholar
[31]
Cheng, R.; Jiang, S.; Chen, Y.; Liu, Y.; Weiss, N.; Cheng, H. C.; Wu, H.; Huang, Y.; Duan, X. F. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 2014, 5, 5143.
Google Scholar
[32]
Zhao, M.; Ye, Y.; Han, Y. M.; Xia, Y.; Zhu, H. Y.; Wang, S. Q.; Wang, Y.; Muller, D. A.; Zhang, X. Large-scale chemical assembly of atomically thin transistors and circuits. Nat. Nanotechnol. 2016, 11, 954-959.
Google Scholar
[33]
Yu, L. L.; El-Damak, D.; Radhakrishna, U.; Ling, X.; Zubair, A.; Lin, Y. X.; Zhang, Y. H.; Chuang, M. H.; Lee, Y. H.; Antoniadis, D. et al. Design, modeling, and fabrication of chemical vapor deposition grown MoS2 circuits with E-mode FETs for large-area electronics. Nano. Lett. 2016, 16, 6349-6356.
Google Scholar
[34]
Wang, L.; Chen, L.; Wong, S. L.; Huang, X.; Liao, W. G.; Zhu, C. X.; Lim, Y. F.; Li, D. B.; Liu, X. K.; Chi, D. Z. et al. Electronic devices and circuits based on wafer-scale polycrystalline monolayer MoS2 by chemical vapor deposition. Adv. Electron. Mater. 2019, 5, 1900393.
Google Scholar
[35]
Zhang, T. B.; Liu, H.; Wang, Y.; Zhu, H.; Chen, L.; Sun, Q. Q.; Zhang, D. W. Fast-response inverter arrays built on wafer-scale MoS2 by atomic layer deposition. Phys. Status Solidi Rapid Res. Lett. 2019, 13, 1900018.
Google Scholar
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Publication history
Copyright
Acknowledgements

Publication history

Received: 29 February 2020
Revised: 24 March 2020
Accepted: 01 April 2020
Published: 23 April 2020
Issue date: June 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

This work was supported by the National Natural Foundation of China (NSFC) (Nos. 61704030 and 61522404), Shanghai Rising-Star Program (No.19QA1400600), the Program of Shanghai Subject Chief Scientist (No.18XD1402800), and the Support Plans for the Youth Top-Notch Talents of China.

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