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Infrared (IR) light photodetection based on two dimensional (2D) materials of proper bandgap has attracted increasing attention. However, the weak IR absorption in 2D materials, due to their ultrathin attribute and indirect bandgap in multilayer structures, degrades their performance when used as IR photodetectors. In this work, we utilize the fact that few-layer MoTe2 flake has a near-IR (NIR) bandgap and demonstrate a ~ 60-fold enhancement of NIR response by introducing a gold hollow nanorods on the surface. Such gold hollow nanorods have distinct absorption peak located also at the NIR regime, therefore induces strong resonance, benefitting NIR absorption in MoTe2, resulting in strong near-field enhancement. With the evidence from steady and transient state optical spectra, we confirm that the enhancement of NIR response originates only photon absorption, rather than electron transport at interfaces as observed in other heterostructures, therefore, precluding the requirement of high-quality interfaces for commercial applications.

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Publication history
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Acknowledgements

Publication history

Received: 19 February 2020
Revised: 30 March 2020
Accepted: 01 April 2020
Published: 11 May 2020
Issue date: June 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

This project was supported by the Research Grant Council of Hong Kong SAR (No. 1620441), NSFC-RGC Joint Research Scheme (No. N_HKUST607/17), the Innovation and Technology Commission (No. ITC-CNERC14SC01), the Zhongshan Municipal Bureau of Science & Technology (No. ZSST19EG03) and National Natural Science Foundation of China (NSFC) (Nos. 11825203, 51872100, 21825103, 21501060 and 51727809), National Basic Research Program of China (Nos. 2015CB932600 and 2019kfyRCPY059), and Foundation of Shenzhen Science and Technology Innovation Committee (No. JCYJ20180504170444967). Technical assistance from the Materials Characterization and Preparation Facilities of HKUST, and from Analytical and Testing Center in Huazhong University of Science and Technology are greatly appreciated.

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