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Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta2Pd3Se8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy (TEM) and transport measurements reveal the as-fabricated Ta2Pd3Se8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low-frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.

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Publication history
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Acknowledgements

Publication history

Received: 23 December 2019
Revised: 03 March 2020
Accepted: 31 March 2020
Published: 12 May 2020
Issue date: June 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

This work is supported by the United States Department of Energy under Grant DE-SC0014208 and by The National Science Foundation under Grant 1752997. We acknowledge the Coordinated Instrument Facility (CIF) of Tulane University for the support of various instruments. P. B. S. and L. Y. A. (theoretical calculations) were supported by the Russian Science Foundation (No. 17-72-20223). We are grateful to the supercomputer cluster provided by the Materials Modelling and Development Laboratory at NUST "MISIS" (supported via the Grant from the Ministry of Education and Science of the Russian Federation No. 14.Y26.31.0005) and to the Joint Supercomputer Center of the Russian Academy of Sciences.

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