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Research Article

Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap

Chenyuan Cai1, Yunhao Zhao1, Faran Chang2, Xuebing Zhao1, Liting Yang1, Chongyun Liang1, Guowei Wang2, Zhichuan Niu2, Yi Shi3, Xianhu Liu4, Yuesheng Li1, Renchao Che1( )
Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education, Zhengzhou University, Zhengzhou 450002, China
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Abstract

As the proportion of interfaces increases rapidly in nanomaterials, properties and quality of interfaces hugely impact the performance of advanced semiconductors. Here, the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers. Through strain mapping, it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers. Meantime, owing to the creation of hole potential wells within the original electron wells, the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart. Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations, which is a must for better optical performance. Furthermore, with an elaborate design of the inserted layers, the wave function overlap could be boosted without sacrificing other key device performances.

Keywords

interface engineeringenergy band alignmentcharge distributionstrain distributionsemiconductor multilayer nanostructures

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Nano Research
Volume 13 Issue 6,
June 2020
Pages 1536-1543
DOI: 10.1007/s12274-020-2764-2
Cite this article:
Cai C, Zhao Y, Chang F, et al. Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap. Nano Research, 2020, 13(6): 1536-1543. https://doi.org/10.1007/s12274-020-2764-2
Topics:
Aluminum alloysArsenicc ompoundsIIIIndium antimonidesNarrow band gap semiconductors Semiconductor alloysV semiconductors

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Received: 26 December 2019
Revised: 23 February 2020
Accepted: 21 March 2020
Published: 30 April 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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