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Nano Research 2020, 13(7): 1943-1947 https://doi.org/10.1007/s12274-020-2760-6
Research Article | Issue | Published: 30 March 2020

Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors

Show Author's Information Yang Liu1,§,  Peiqi Wang1,2,§,  Yiliu Wang1,  Yu Huang2,  Xiangfeng Duan1,3( )
Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA 90095, USA
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
California Nanosystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA

§ Yang Liu and Peiqi Wang contributed equally to this work.

Keywords:
two-dimensional transition metal dichalcogenides, feedback gate transistor, threshold voltage roll-off, ambipolar behavior tailoring
Topics:
Computer circuits ElectrodesLayered semiconductorsMolybdenum compoundsSelenium compoundsTransition metalsYttrium oxide
Cite this article:
Liu Y, Wang P, Wang Y, et al. Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors. Nano Research, 2020, 13(7): 1943-1947. https://doi.org/10.1007/s12274-020-2760-6
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Abstract Full text Electronic supplementary material About this article

The layered semiconducting transition metal dichalcogenides (s-TMDs) have attracted considerable interest as the channel material for field-effect transistors (FETs). However, the multilayer s-TMD transistors usually exhibit considerable threshold voltage (Vth) shift and ambipolar behavior at high source-drain bias, which is undesirable for modern digital electronics. Here we report the design and fabrication of double feedback gate (FBG) transistors, i.e., source FBG (S-FBG) and drain FBG (D-FBG), to combat these challenges. The FBG transistors differ from normal transistors by including an extra feedback gate, which is directly connected to the source/drain electrodes by extending and overlapping the source/drain electrodes over the yttrium oxide dielectrics on s-TMDs. We show that the S-FBG transistors based on multilayer MoS2 exhibit nearly negligible Vth roll-off at large source-drain bias, and the D-FBG multilayer WSe2 transistors could be tailored into either n-type or p-type transport, depending on the polarity of the drain bias. The double FBG structure offers an effective strategy to tailor multilayer s-TMD transistors with suppressed Vth roll-off and ambipolar transport for high-performance and low-power logic applications.


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About this article

Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors

Show Author's information Yang Liu1,§, Peiqi Wang1,2,§, Yiliu Wang1, Yu Huang2, Xiangfeng Duan1,3( )
Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA 90095, USA
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
California Nanosystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA

§ Yang Liu and Peiqi Wang contributed equally to this work.

Abstract

The layered semiconducting transition metal dichalcogenides (s-TMDs) have attracted considerable interest as the channel material for field-effect transistors (FETs). However, the multilayer s-TMD transistors usually exhibit considerable threshold voltage (Vth) shift and ambipolar behavior at high source-drain bias, which is undesirable for modern digital electronics. Here we report the design and fabrication of double feedback gate (FBG) transistors, i.e., source FBG (S-FBG) and drain FBG (D-FBG), to combat these challenges. The FBG transistors differ from normal transistors by including an extra feedback gate, which is directly connected to the source/drain electrodes by extending and overlapping the source/drain electrodes over the yttrium oxide dielectrics on s-TMDs. We show that the S-FBG transistors based on multilayer MoS2 exhibit nearly negligible Vth roll-off at large source-drain bias, and the D-FBG multilayer WSe2 transistors could be tailored into either n-type or p-type transport, depending on the polarity of the drain bias. The double FBG structure offers an effective strategy to tailor multilayer s-TMD transistors with suppressed Vth roll-off and ambipolar transport for high-performance and low-power logic applications.

Keywords: two-dimensional transition metal dichalcogenides, feedback gate transistor, threshold voltage roll-off, ambipolar behavior tailoring

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Publication history
Copyright
Acknowledgements

Publication history

Received: 27 December 2019
Revised: 21 February 2020
Accepted: 16 March 2020
Published: 30 March 2020
Issue date: July 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

X. F. D. acknowledges financial support by ONR through grant number N000141812707. Y. H. acknowledges the financial support from National Science Foundation EFRI-1433541.

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