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Nano Research 2020, 13(4): 1065-1070 https://doi.org/10.1007/s12274-020-2745-5
Research Article | Issue | Published: 17 April 2020

Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires

Show Author's Information Sedighe Salimian1( ),  Omer Arif1,  Valentina Zannier1,  Daniele Ercolani1,  Francesca Rossi2,  Zahra Sadre Momtaz1,  Fabio Beltram1,  Sefano Roddaro1,3,  Francesco Rossella1( ),  Lucia Sorba1
NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy
IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma, Italy
Department of Physics "E.Fermi" , Università di Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy
Keywords:
nanoelectronics, semiconductor nanowires, core-dualshell nanowires, charge carrier separation
Topics:
Electric field effects IIIIndium phosphideNanowiresSemiconducting galliumSemiconducting indium phosphide Semiconductor alloysShells (structures)TemperatureV semiconductors
Cite this article:
Salimian S, Arif O, Zannier V, et al. Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires. Nano Research, 2020, 13(4): 1065-1070. https://doi.org/10.1007/s12274-020-2745-5
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Abstract Full text Electronic supplementary material About this article

We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/InP/ GaAsSb core-dualshell nanowires. We present a device fabrication protocol based on wet-etching processes on selected areas of the nanostructures that enables multiple configurations of measurements in the same nanowire-based device (i.e. shell-shell, core-core and core-shell). Low-temperature (4.2 K) transport in the shell-shell configuration in nanowires with 5 nm-thick InP barrier reveals a weak negative differential resistance. Differently, when the InP barrier thickness is increased to 10 nm, this negative differential resistance is fully quenched. The electrical resistance between the InAs core and the GaAsSb shell, measured in core-shell configuration, is significantly higher with respect to the resistance of the InAs core and of the GaAsSb shell. The field effect, applied via a back-gate, has an opposite impact on the electrical transport in the core and in the shell portions. Our results show that electron and hole free carriers populate the InAs and GaAsSb regions respectively and indicate InAs/InP/GaAsSb core-dualshell nanowires as an ideal system for the investigation of the physics of interacting electrons and holes at the nanoscale.


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About this article

Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires

Show Author's information Sedighe Salimian1( ), Omer Arif1, Valentina Zannier1, Daniele Ercolani1, Francesca Rossi2, Zahra Sadre Momtaz1, Fabio Beltram1, Sefano Roddaro1,3, Francesco Rossella1( ), Lucia Sorba1
NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy
IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma, Italy
Department of Physics "E.Fermi" , Università di Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy

Abstract

We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/InP/ GaAsSb core-dualshell nanowires. We present a device fabrication protocol based on wet-etching processes on selected areas of the nanostructures that enables multiple configurations of measurements in the same nanowire-based device (i.e. shell-shell, core-core and core-shell). Low-temperature (4.2 K) transport in the shell-shell configuration in nanowires with 5 nm-thick InP barrier reveals a weak negative differential resistance. Differently, when the InP barrier thickness is increased to 10 nm, this negative differential resistance is fully quenched. The electrical resistance between the InAs core and the GaAsSb shell, measured in core-shell configuration, is significantly higher with respect to the resistance of the InAs core and of the GaAsSb shell. The field effect, applied via a back-gate, has an opposite impact on the electrical transport in the core and in the shell portions. Our results show that electron and hole free carriers populate the InAs and GaAsSb regions respectively and indicate InAs/InP/GaAsSb core-dualshell nanowires as an ideal system for the investigation of the physics of interacting electrons and holes at the nanoscale.

Keywords: nanoelectronics, semiconductor nanowires, core-dualshell nanowires, charge carrier separation

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Publication history
Copyright
Acknowledgements

Publication history

Received: 23 December 2019
Revised: 28 February 2020
Accepted: 04 March 2020
Published: 17 April 2020
Issue date: April 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

This research activity was partially supported by the SUPERTOP project, QUANTERA ERA-NET Cofound in Quantum Technologies, and by the FET-OPEN project AndQC.

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