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Monolayer MoS2 is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS2 is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of vertically-stacked MoS2/MoSe2 heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm2/(V·s) and a high on/off ratio of 107. The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 × 1011 Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.

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Publication history

Received: 18 January 2020
Revised: 25 February 2020
Accepted: 04 March 2020
Published: 16 April 2020
Issue date: April 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

This work is supported by the National Natural Science Foundation of China (Nos. 51525202, 51902098, 51772084, 61574054, 51972105, and 11904098,), the Hunan Provincial Natural Science Foundation of China (No. 2018RS3051), the Joint Funds of the National Natural Science Foundation of China (No. U19A2090), and Hunan Provincial (China) Natural Science Foundation for Excellent Young Scholars (No. 2019JJ30004).

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Email: nanores@tup.tsinghua.edu.cn

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