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DNA-based nanofabrication of inorganic nanostructures has potential application in electronics, catalysis, and plasmonics. Previous DNA metallization has generated conductive DNA-assembled nanostructures; however, the use of semiconductors and the development of well-connected nanoscale metal-semiconductor junctions on DNA nanostructures are still at an early stage. Herein, we report the first fabrication of multiple electrically connected metal-semiconductor junctions on individual DNA origami by location-specific binding of gold and tellurium nanorods. Nanorod attachment to DNA origami was via DNA hybridization for Au and by electrostatic interaction for Te. Electroless gold plating was used to create nanoscale metal-semiconductor interfaces by filling the gaps between Au and Te nanorods. Two-point electrical characterization indicated that the Au-Te-Au junctions were electrically connected, with current-voltage properties consistent with a Schottky junction. DNA-based nanofabrication of metal-semiconductor junctions opens up potential opportunities in nanoelectronics, demonstrating the power of this bottom-up approach.


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DNA origami mediated electrically connected metal-semiconductor junctions

Show Author's information Basu R. Aryal1Dulashani R. Ranasinghe1Tyler R. Westover3Diana G. Calvopiña1Robert C. Davis3John N. Harb2Adam T. Woolley1( )
Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602, USA
Department of Chemical Engineering, Brigham Young University, Provo, UT 84602, USA
Department of Physics and Astronomy, Brigham Young University, Provo, UT 84602, USA

Abstract

DNA-based nanofabrication of inorganic nanostructures has potential application in electronics, catalysis, and plasmonics. Previous DNA metallization has generated conductive DNA-assembled nanostructures; however, the use of semiconductors and the development of well-connected nanoscale metal-semiconductor junctions on DNA nanostructures are still at an early stage. Herein, we report the first fabrication of multiple electrically connected metal-semiconductor junctions on individual DNA origami by location-specific binding of gold and tellurium nanorods. Nanorod attachment to DNA origami was via DNA hybridization for Au and by electrostatic interaction for Te. Electroless gold plating was used to create nanoscale metal-semiconductor interfaces by filling the gaps between Au and Te nanorods. Two-point electrical characterization indicated that the Au-Te-Au junctions were electrically connected, with current-voltage properties consistent with a Schottky junction. DNA-based nanofabrication of metal-semiconductor junctions opens up potential opportunities in nanoelectronics, demonstrating the power of this bottom-up approach.

Keywords: nanoelectronics, gold nanorods, electroless plating, current-voltage measurement, DNA nanofabrication, tellurium nanorods

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Publication history
Copyright
Acknowledgements

Publication history

Received: 30 October 2019
Revised: 21 December 2019
Accepted: 20 January 2020
Published: 19 February 2020
Issue date: May 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

We thank the National Science Foundation (No. 1562729) and BYU’s Simmons Research Endowment for support of this work. B. R. A. acknowledges the BYU Department of Chemistry and Biochemistry for a Roland K. Robins Graduate Research Fellowship.

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