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11 March 2020
Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics
Yongjie Hu(
)
)
Keywords:
black phosphorus, nanoelectronics, two-dimensional (2D) materials and heterostructures, field-effect transistors (FETs), diode, tunable properties
Topics:
CalculationsElectric field effects Monolithic integrated circuitsNanoelectronics Van der Waals forces
Cite this article:
Ke M, Duy Nguyen H, Fan H, et al.
Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics.
Nano Research,
2020, 13(5): 1369-1375.
https://doi.org/10.1007/s12274-020-2634-y
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Doping control has been a key challenge for electronic applications of van der Waals materials. Here, we demonstrate complementary doping of black phosphorus using controlled ionic intercalation to achieve monolithic building elements. We characterize the anisotropic electrical transport as a function of ion concentrations and report a widely tunable resistivity up to three orders of magnitude with characteristic concentration dependence corresponding to phase transitions during intercalation. As a further step, we develop both p-type and n-type field effect transistors as well as electrical diodes with high device stability and performance. In addition, enhanced charge mobility from 380 to 820 cm2/(V·s) with the intercalation process is observed and explained as the suppressed neutral impurity scattering based on our ab initio calculations. Our study provides a unique approach to atomically control the electrical properties of van der Waals materials, and may open up new opportunities in developing advanced electronics and physics platforms.
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Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics
Yongjie Hu(
)
)
Abstract
Doping control has been a key challenge for electronic applications of van der Waals materials. Here, we demonstrate complementary doping of black phosphorus using controlled ionic intercalation to achieve monolithic building elements. We characterize the anisotropic electrical transport as a function of ion concentrations and report a widely tunable resistivity up to three orders of magnitude with characteristic concentration dependence corresponding to phase transitions during intercalation. As a further step, we develop both p-type and n-type field effect transistors as well as electrical diodes with high device stability and performance. In addition, enhanced charge mobility from 380 to 820 cm2/(V·s) with the intercalation process is observed and explained as the suppressed neutral impurity scattering based on our ab initio calculations. Our study provides a unique approach to atomically control the electrical properties of van der Waals materials, and may open up new opportunities in developing advanced electronics and physics platforms.
Keywords:
black phosphorus, nanoelectronics, two-dimensional (2D) materials and heterostructures, field-effect transistors (FETs), diode, tunable properties
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Publication history
Copyright
Acknowledgements
Publication history
Received: 05 November 2019
Revised: 29 December 2019
Accepted: 31 December 2019
Published:
11 March 2020
Issue date: May 2020
Copyright
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
Acknowledgements
Y. H. acknowledges support from a CAREER award from the National Science Foundation under grant DMR-1753393, an Alfred P. Sloan Research Fellowship under grant FG-2019-11788, a Young Investigator Award from the US Air Force Office of Scientific Research under grant FA9550-17-1-0149, a Doctoral New Investigator Award from the American Chemical Society Petroleum Research Fund under grant 58206-DNI5, as well as from the UCLA Sustainable LA Grand Challenge and the Anthony and Jeanne Pritzker Family Foundation. This work used the Extreme Science and Engineering Discovery Environment (XSEDE), which is supported by National Science Foundation grant number ACI-1548562. Specifically, it used the Bridges system, which is supported by NSF award number ACI-1445606, at the Pittsburgh Supercomputing Center (PSC).
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