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Research Article

A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2

Pengdong Wang1,§Rashid Khan1,§Zhanfeng Liu1Bo Zhang1Yuliang Li1Sheng Wang1Yunbo Wu1Hongen Zhu1Yi Liu1Guobin Zhang1Dayong Liu2Shuangming Chen1( )Li Song1 ( )Zhe Sun1,3,4( )
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031, China
Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, University of Science and Technology of China, Hefei 230026, China
CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China

§ Pengdong Wang and Rashid Khan contributed equally to this work.

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Abstract

The intercalation of metal is a promising method for the modulating electronic properties in transition metal dichalcogenides (TMDs). However, there still lacks enough knowledge about how the intercalated atoms directly impact the two-dimensional structural layers and modulate the band structures therein. Taking advantage of X-ray absorption fine structure and angle-resolved photoemission spectroscopy, we studied how Cu intercalation influences the host TaSe2 layers in Cu0.03TaSe2 crystals. The intercalated Cu atoms form bonds with Se of the host layers, and there is charge transfer from Cu to Se. By examining the changes of band dispersions, we show that the variation of electronic structures is beyond a simple rigid band model with merely charge doping effect. This work reveals that the unusual change of band dispersions is associated with the formation of bonds between the intercalated metal elements and anion ions in the host layers, and provides a reference for the comprehensive understanding of the electronic structures in intercalated materials.

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Nano Research
Pages 353-357

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Cite this article:
Wang P, Khan R, Liu Z, et al. A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2. Nano Research, 2020, 13(2): 353-357. https://doi.org/10.1007/s12274-020-2613-3
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Received: 12 August 2019
Revised: 14 December 2019
Accepted: 18 December 2019
Published: 17 January 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020