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Nano Research 2020, 13(2): 353-357 https://doi.org/10.1007/s12274-020-2613-3
Research Article | Issue | Published: 17 January 2020

A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2

Show Author's Information Pengdong Wang1,§,  Rashid Khan1,§,  Zhanfeng Liu1,  Bo Zhang1,  Yuliang Li1,  Sheng Wang1,  Yunbo Wu1,  Hongen Zhu1,  Yi Liu1,  Guobin Zhang1,  Dayong Liu2,  Shuangming Chen1( ),  Li Song1( ),  Zhe Sun1,3,4( )
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031, China
Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, University of Science and Technology of China, Hefei 230026, China
CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China

§ Pengdong Wang and Rashid Khan contributed equally to this work.

Keywords:
transition metal dichalcogenides, angle resolved photoemission spectroscopy, Cu-intercalation, band shift
Topics:
CopperElectronic propertiesElectronic structurePhotoelectron spectroscopySelenium compoundsTantalum compoundsX-ray absorption
Cite this article:
Wang P, Khan R, Liu Z, et al. A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2. Nano Research, 2020, 13(2): 353-357. https://doi.org/10.1007/s12274-020-2613-3
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Abstract Full text Electronic supplementary material About this article

The intercalation of metal is a promising method for the modulating electronic properties in transition metal dichalcogenides (TMDs). However, there still lacks enough knowledge about how the intercalated atoms directly impact the two-dimensional structural layers and modulate the band structures therein. Taking advantage of X-ray absorption fine structure and angle-resolved photoemission spectroscopy, we studied how Cu intercalation influences the host TaSe2 layers in Cu0.03TaSe2 crystals. The intercalated Cu atoms form bonds with Se of the host layers, and there is charge transfer from Cu to Se. By examining the changes of band dispersions, we show that the variation of electronic structures is beyond a simple rigid band model with merely charge doping effect. This work reveals that the unusual change of band dispersions is associated with the formation of bonds between the intercalated metal elements and anion ions in the host layers, and provides a reference for the comprehensive understanding of the electronic structures in intercalated materials.


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Electronic supplementary material
About this article

A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2

Show Author's information Pengdong Wang1,§, Rashid Khan1,§, Zhanfeng Liu1, Bo Zhang1, Yuliang Li1, Sheng Wang1, Yunbo Wu1, Hongen Zhu1, Yi Liu1, Guobin Zhang1, Dayong Liu2, Shuangming Chen1( ), Li Song1( ), Zhe Sun1,3,4( )
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031, China
Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, University of Science and Technology of China, Hefei 230026, China
CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China

§ Pengdong Wang and Rashid Khan contributed equally to this work.

Abstract

The intercalation of metal is a promising method for the modulating electronic properties in transition metal dichalcogenides (TMDs). However, there still lacks enough knowledge about how the intercalated atoms directly impact the two-dimensional structural layers and modulate the band structures therein. Taking advantage of X-ray absorption fine structure and angle-resolved photoemission spectroscopy, we studied how Cu intercalation influences the host TaSe2 layers in Cu0.03TaSe2 crystals. The intercalated Cu atoms form bonds with Se of the host layers, and there is charge transfer from Cu to Se. By examining the changes of band dispersions, we show that the variation of electronic structures is beyond a simple rigid band model with merely charge doping effect. This work reveals that the unusual change of band dispersions is associated with the formation of bonds between the intercalated metal elements and anion ions in the host layers, and provides a reference for the comprehensive understanding of the electronic structures in intercalated materials.

Keywords: transition metal dichalcogenides, angle resolved photoemission spectroscopy, Cu-intercalation, band shift

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Publication history
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Acknowledgements

Publication history

Received: 12 August 2019
Revised: 14 December 2019
Accepted: 18 December 2019
Published: 17 January 2020
Issue date: February 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

We acknowledge the financial support from the National Key R&D Program of China (No. 2017YFA0402901, 2016YFA0401004), National Natural Science Foundation of China (No. 11674296, 21727801 and 11621063), the Key Research Program of the Chinese Academy of Sciences (No. XDPB01), the Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology (No. 2018CXFX002), NSFC-MAECI (51861135202).

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