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Research Article

Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi2(Te1-xSex)3 nanowires

LingNan Wei1,2, ZhenHua Wang1,2( ), ZhiDong Zhang1,2, Chieh-Wen Liu3, Xuan P. A. Gao3( )
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, USA
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Graphical Abstract

Abstract

We report the composition and back-gate voltage tuned transport properties of ternary compound Bi2(Te1-xSex)3 nanowires synthesized by chemical vapor deposition (CVD). It is found that the population of bulk carriers can be suppressed effectively with increasing the Se concentration x. In Bi2(Te1-xSex)3 nanowires with x = 25% ± 5%, the ambipolar surface conduction associated with tuning the Fermi energy across the Dirac point of topological surface states is induced by applying a back-gate voltage. Importantly, we find that while the magneto-resistance (MR) follows the weak antilocalization (WAL) behavior when the Fermi level is tuned away from the Dirac point, MR is enhanced in magnitude and turns more linear in the whole magnetic field range (between ±9 T) near the Dirac point. The observation of the enhanced linear magneto-resistance (LMR) and crossover from WAL to LMR, near the Dirac point provides a deeper insight into understanding the nature of topological insulator’s surface transport and the relation between these two widely observed magneto-transport phenomena.

Keywords

topological insulatornanowireambipolar conductionbismuth selenidebismuth telluridelinear magneto-resistanceweak anti-localization

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Nano Research
Volume 13 Issue 5,
May 2020
Pages 1332-1338
DOI: 10.1007/s12274-019-2577-3
Cite this article:
Wei L, Wang Z, Zhang Z, et al. Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi2(Te1-xSex)3 nanowires. Nano Research, 2020, 13(5): 1332-1338. https://doi.org/10.1007/s12274-019-2577-3
Topics:
Bismuth compoundsChemical vapor depositionNanowiresSemiconductor quantum wells

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Received: 30 September 2019
Revised: 19 November 2019
Accepted: 24 November 2019
Published: 09 December 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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