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Nano Research 2019, 12(11): 2781-2787 https://doi.org/10.1007/s12274-019-2513-6
Research Article | Issue | Published: 25 September 2019

Selective growth of wide band gap atomically thin Sb2O3 inorganic molecular crystal on WS2

Show Author's Information Guangzhuang Sun1,§,  Bo Li2,§,  Shifa Wang3,  Zhengwei Zhang1,  Jia Li1,  Xidong Duan1( ),  Xiangfeng Duan4
State Key Laboratory for Chemo/Biosensing and Chemometrics and Hunan Key Laboratory of Two-Dimensional MaterialsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha410082China
Department of Applied PhysicsSchool of Physics and ElectronicsHunan UniversityChangsha410082China
School of Electronic and Information EngineeringChongqing Three Gorges UniversityChongqingWanzhou404000China
Department of Chemistry and BiochemistryUniversity of CaliforniaLos AngelesCalifornia90095USA

§ Guangzhuang Sun and Bo Li contributed equally to this work.

Keywords:
selective growth, band alignment, vapor phase epitaxy, Sb2O3/WS2 heterostructures, rectification effect
Topics:
Electron diffractionEnergy gapMolecular crystalsNanosheetsTungsten compoundsVan der Waals forces
Cite this article:
Sun G, Li B, Wang S, et al. Selective growth of wide band gap atomically thin Sb2O3 inorganic molecular crystal on WS2. Nano Research, 2019, 12(11): 2781-2787. https://doi.org/10.1007/s12274-019-2513-6
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Abstract Full text Electronic supplementary material About this article

Heterostructures combined by different individual two-dimensional (2D) materials are essential building blocks to realize unique electronic, optoelectronic properties and multifunctional applications. To date, the direct growth of 2D/2D atomic van der Waals heterostructures (vdWHs) have been extensively investigated. However, the heterostructures from 2D inorganic molecular crystals and atomic crystals have been rarely reported. Here we report two-step direct epitaxial growth of the inorganic molecular-atomic Sb2O3/WS2 vdWHs. The thickness of Sb2O3 nanosheets on WS2 nanosheets can be tuned by variable growth temperatures. Oriented growth behavior of Sb2O3 on WS2 was determined through statistics. Optical images, Raman spectra, Raman mappings and selected-area electron diffraction (SAED), etc., reveal that Sb2O3/WS2 heterostructures are vertically stacked with high crystal quality. Electrical transport measurements demonstrate that the heterotransistors based on the heterostructures possess high current on/off ratio of 5 × 105, obvious gate-tunable and current rectification output characteristics. Optoelectronic characterizations show that the heterostructures have a clear photoresponse with high responsivity of 16.4 A/W. The growth of vdWHs from 2D inorganic molecular-atomic crystals may open up new opportunities in 2D functional electronics and optoelectronics.


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Abstract
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Electronic supplementary material
About this article

Selective growth of wide band gap atomically thin Sb2O3 inorganic molecular crystal on WS2

Show Author's information Guangzhuang Sun1,§, Bo Li2,§, Shifa Wang3, Zhengwei Zhang1, Jia Li1, Xidong Duan1( ), Xiangfeng Duan4
State Key Laboratory for Chemo/Biosensing and Chemometrics and Hunan Key Laboratory of Two-Dimensional MaterialsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha410082China
Department of Applied PhysicsSchool of Physics and ElectronicsHunan UniversityChangsha410082China
School of Electronic and Information EngineeringChongqing Three Gorges UniversityChongqingWanzhou404000China
Department of Chemistry and BiochemistryUniversity of CaliforniaLos AngelesCalifornia90095USA

§ Guangzhuang Sun and Bo Li contributed equally to this work.

Abstract

Heterostructures combined by different individual two-dimensional (2D) materials are essential building blocks to realize unique electronic, optoelectronic properties and multifunctional applications. To date, the direct growth of 2D/2D atomic van der Waals heterostructures (vdWHs) have been extensively investigated. However, the heterostructures from 2D inorganic molecular crystals and atomic crystals have been rarely reported. Here we report two-step direct epitaxial growth of the inorganic molecular-atomic Sb2O3/WS2 vdWHs. The thickness of Sb2O3 nanosheets on WS2 nanosheets can be tuned by variable growth temperatures. Oriented growth behavior of Sb2O3 on WS2 was determined through statistics. Optical images, Raman spectra, Raman mappings and selected-area electron diffraction (SAED), etc., reveal that Sb2O3/WS2 heterostructures are vertically stacked with high crystal quality. Electrical transport measurements demonstrate that the heterotransistors based on the heterostructures possess high current on/off ratio of 5 × 105, obvious gate-tunable and current rectification output characteristics. Optoelectronic characterizations show that the heterostructures have a clear photoresponse with high responsivity of 16.4 A/W. The growth of vdWHs from 2D inorganic molecular-atomic crystals may open up new opportunities in 2D functional electronics and optoelectronics.

Keywords: selective growth, band alignment, vapor phase epitaxy, Sb2O3/WS2 heterostructures, rectification effect

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Publication history
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Acknowledgements

Publication history

Received: 30 July 2019
Revised: 28 August 2019
Accepted: 02 September 2019
Published: 25 September 2019
Issue date: November 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

We acknowledge the financial support from the Fundamental Research Funds of the Central Universities (No. 531118010112), the Double First-Class University Initiative of Hunan University (No. 531109100004). We also acknowledge the support from the National Natural Science Foundation of China (No. 751214296), Hunan Key Laboratory of Two-Dimensional Materials (No. 801200005), and Strategic Priority Research Program of Chinese Academy of Science (No. XDB30000000).

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