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Nano Research 2019, 12(11): 2712-2717 https://doi.org/10.1007/s12274-019-2503-8
Research Article | Issue | Published: 28 August 2019

Low-temperature epitaxy of transferable high-quality Pd(111) films on hybrid graphene/Cu(111) substrate

Show Author's Information Zhihong Zhang1,2,  Xiaozhi Xu1,3,  Ruixi Qiao1,  Junjiang Liu4,  Yuxia Feng1,  Zhibin Zhang1,  Peizhao Song1,  Muhong Wu1,5,  Lan Zhu6,  Xuelin Yang1,  Peng Gao1,  Lei Liu4,  Jie Xiong7,  Enge Wang1,2,5,  Kaihui Liu1( )
State Key Laboratory for Mesoscopic Physics, International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum MatterSchool of Physics, Academy for Advanced Interdisciplinary Studies, Peking UniversityBeijing100871China
Physical Science LaboratoryHuairou National Comprehensive Science CentreBeijing101400China
School of Physics and Telecommunication EngineeringSouth China Normal UniversityGuangzhou510631China
Department of Materials Science and EngineeringCollege of Engineering, Peking UniversityBeijing100871China
Songshan Lake Materials Laboratory, Institute of PhysicsChinese Academy of SciencesGuangdong523808China
Peking Union Medical College HospitalBeijing100730China
State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China
Keywords:
single-crystal metal film, graphene/Cu(111) substrate, interfacial interactions, meter scale
Topics:
Grain boundariesGrapheneMetallic films MetalsOptoelectronic devicesSingle crystalsTemperature
Cite this article:
Zhang Z, Xu X, Qiao R, et al. Low-temperature epitaxy of transferable high-quality Pd(111) films on hybrid graphene/Cu(111) substrate. Nano Research, 2019, 12(11): 2712-2717. https://doi.org/10.1007/s12274-019-2503-8
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Abstract Full text Electronic supplementary material About this article

The continuous pursuit of miniaturization in the electronics and optoelectronics industry demands all device components with smaller size and higher performance, in which thin metal film is one heart material as conductive electrodes. However, conventional metal films are typically polycrystalline with random domain orientations and various grain boundaries, which greatly degrade their mechanical, thermal and electrical properties. Hence, it is highly demanded to produce single-crystal metal films with epitaxy in an appealing route. Traditional epitaxy on non-metal single-crystal substrates has difficulty in exfoliating away due to the formation of chemical bonds. Newly developed epitaxy on single-crystal graphene enables the easy exfoliation of epilayers but the annealing temperature must be high (typical 500–1, 000 ℃ and out of the tolerant range of integrated circuit technology) due to the relative weak interfacial interactions. Here we demonstrate the facile production of 6-inch transferable high-quality Pd(111) films on single-crystal hybrid graphene/Cu(111) substrate with CMOS-compatible annealing temperature of 150 ℃ only. The interfacial interaction between Pd and hybrid graphene/Cu(111) substrate is strong enough to enable the low-temperature epitaxy of Pd(111) films and weak enough to facilitate the easy film release from substrate. The obtained Pd(111) films possess superior properties to polycrystalline ones with ~ 0.25 eV higher work function and almost half sheet resistance. This technique is proved to be applicable to other metals, such as Au and Ag. As the single-crystal graphene/Cu(111) substrates are obtained from industrial Cu foils and accessible in meter scale, our work will promote the massive applications of large-area high-quality metal films in the development of next-generation electronic and optoelectronic devices.


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Abstract
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Electronic supplementary material
About this article

Low-temperature epitaxy of transferable high-quality Pd(111) films on hybrid graphene/Cu(111) substrate

Show Author's information Zhihong Zhang1,2, Xiaozhi Xu1,3, Ruixi Qiao1, Junjiang Liu4, Yuxia Feng1, Zhibin Zhang1, Peizhao Song1, Muhong Wu1,5, Lan Zhu6, Xuelin Yang1, Peng Gao1, Lei Liu4, Jie Xiong7, Enge Wang1,2,5, Kaihui Liu1( )
State Key Laboratory for Mesoscopic Physics, International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum MatterSchool of Physics, Academy for Advanced Interdisciplinary Studies, Peking UniversityBeijing100871China
Physical Science LaboratoryHuairou National Comprehensive Science CentreBeijing101400China
School of Physics and Telecommunication EngineeringSouth China Normal UniversityGuangzhou510631China
Department of Materials Science and EngineeringCollege of Engineering, Peking UniversityBeijing100871China
Songshan Lake Materials Laboratory, Institute of PhysicsChinese Academy of SciencesGuangdong523808China
Peking Union Medical College HospitalBeijing100730China
State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054China

Abstract

The continuous pursuit of miniaturization in the electronics and optoelectronics industry demands all device components with smaller size and higher performance, in which thin metal film is one heart material as conductive electrodes. However, conventional metal films are typically polycrystalline with random domain orientations and various grain boundaries, which greatly degrade their mechanical, thermal and electrical properties. Hence, it is highly demanded to produce single-crystal metal films with epitaxy in an appealing route. Traditional epitaxy on non-metal single-crystal substrates has difficulty in exfoliating away due to the formation of chemical bonds. Newly developed epitaxy on single-crystal graphene enables the easy exfoliation of epilayers but the annealing temperature must be high (typical 500–1, 000 ℃ and out of the tolerant range of integrated circuit technology) due to the relative weak interfacial interactions. Here we demonstrate the facile production of 6-inch transferable high-quality Pd(111) films on single-crystal hybrid graphene/Cu(111) substrate with CMOS-compatible annealing temperature of 150 ℃ only. The interfacial interaction between Pd and hybrid graphene/Cu(111) substrate is strong enough to enable the low-temperature epitaxy of Pd(111) films and weak enough to facilitate the easy film release from substrate. The obtained Pd(111) films possess superior properties to polycrystalline ones with ~ 0.25 eV higher work function and almost half sheet resistance. This technique is proved to be applicable to other metals, such as Au and Ag. As the single-crystal graphene/Cu(111) substrates are obtained from industrial Cu foils and accessible in meter scale, our work will promote the massive applications of large-area high-quality metal films in the development of next-generation electronic and optoelectronic devices.

Keywords: single-crystal metal film, graphene/Cu(111) substrate, interfacial interactions, meter scale

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Publication history
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Acknowledgements

Publication history

Received: 05 June 2019
Revised: 09 August 2019
Accepted: 15 August 2019
Published: 28 August 2019
Issue date: November 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

This work was supported by the National Key R & D Program of China (Nos. 2016YFA0300903 and 2016YFA0300804), the National Natural Science Foundation of China (NSFC) (No. 11888101), the National Equipment Program of China (No. ZDYZ2015-1), Beijing Graphene Innovation Program (No. Z181100004818003), Beijing Municipal Science & Technology Commission (No. Z181100004218006), Bureau of Industry and Information Technology of Shenzhen (Graphene platform contract NO. 201901161512), and the Key R & D Program of Guangdong Province (No. 2019B010931001).

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