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Research Article

Optomechanical control of stacking patterns of h-BN bilayer

Haowei Xu1Jian Zhou2Yifei Li3Rafael Jaramillo3Ju Li1,3 ( )
Department of Nuclear Science and Engineering,Massachusetts Institute of Technology,Cambridge, MA,02139,USA;
Center for Advancing Materials Performance from the Nanoscale,State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University,Xi'an,710049,China;
Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge, MA,02139,USA;
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Abstract

Few-layer two-dimensional (2D) materials usually have different (meta)-stable stacking patterns, which have distinct electronic and optical properties. Inspired by optical tweezers, we show that a laser with selected frequency can modify the generalized stacking-fault energy landscape of bilayer hexagonal boron nitride (BBN), by coupling to the slip-dependent dielectric response. Consequently, BBN can be reversibly and barrier-freely switched between its stacking patterns in a controllable way. We simulate the dynamics of the stacking transition with a simplified equation of motion and demonstrate that it happens at picosecond timescale. When one layer of BBN has a nearly-free surface boundary condition, BBN can be locked in its metastable stacking modes for a long time. Such a fast, reversible and non-volatile transition makes BBN a potential media for data storage and optical phase mask.

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Nano Research
Pages 2634-2639

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Cite this article:
Xu H, Zhou J, Li Y, et al. Optomechanical control of stacking patterns of h-BN bilayer. Nano Research, 2019, 12(10): 2634-2639. https://doi.org/10.1007/s12274-019-2500-y
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Received: 06 June 2019
Revised: 29 July 2019
Accepted: 06 August 2019
Published: 20 August 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019