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Research Article

Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

Jong-Hyun Kim1Sang Hyo Kweon2,3Sahn Nahm1,2( )
KU-KIST Graduate School of Converging Science and Technology,Korea University, 145 Anam-ro, Seongbuk-gu,Seoul,02841,Republic of Korea;
Department of Material Science and Engineering,Korea University, 145 Anam-ro, Seongbuk-gu,Seoul,02841,Republic of Korea;
Department of Mechanical Engineering,Kobe University, 1-1 Rokkodai-cho, Nada,Kobe,657-8501,Japan;
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Abstract

A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1-xKx)NbO3 (NKN) film at 350 ℃. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 ℃, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pm·V-1, and a leakage current density of 6.47 × 10-7 A·cm-2 at -0.2 MV·cm-1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 ℃. Hence, the NKN films grown on the SNO seed-layer at 350 ℃ can be applied to electronic devices with flexible polymer substrates.

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Nano Research
Pages 2559-2567
Cite this article:
Kim J-H, Kweon SH, Nahm S. Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications. Nano Research, 2019, 12(10): 2559-2567. https://doi.org/10.1007/s12274-019-2486-5
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Received: 08 February 2019
Revised: 20 June 2019
Accepted: 20 July 2019
Published: 02 August 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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