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Nano Research 2019, 12(10): 2559-2567 https://doi.org/10.1007/s12274-019-2486-5
Research Article | Issue | Published: 02 August 2019

Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

Show Author's Information Jong-Hyun Kim1,  Sang Hyo Kweon2,3,  Sahn Nahm1,2( )
KU-KIST Graduate School of Converging Science and Technology,Korea University, 145 Anam-ro, Seongbuk-gu,Seoul,02841,Republic of Korea;
Department of Material Science and Engineering,Korea University, 145 Anam-ro, Seongbuk-gu,Seoul,02841,Republic of Korea;
Department of Mechanical Engineering,Kobe University, 1-1 Rokkodai-cho, Nada,Kobe,657-8501,Japan;
Keywords:
lead-free piezoelectric thin films, low-temperature-deposition process, two-dimensional (2D) nanosheet seed-layers, polymer substrates
Topics:
Crystalline materials DepositionMonolayersNanosheetsNiobium compoundsPerovskitePerovskite solar cellsPlatinum compoundsPolymer films Silicon compoundsSodium compoundsStrontium compoundsTemperatureThin film transistorsThin filmsTitanium
Cite this article:
Kim J-H, Kweon SH, Nahm S. Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications. Nano Research, 2019, 12(10): 2559-2567. https://doi.org/10.1007/s12274-019-2486-5
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Abstract Electronic supplementary material About this article

A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1-xKx)NbO3 (NKN) film at 350 ℃. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 ℃, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pm·V-1, and a leakage current density of 6.47 × 10-7 A·cm-2 at -0.2 MV·cm-1. Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 ℃. Hence, the NKN films grown on the SNO seed-layer at 350 ℃ can be applied to electronic devices with flexible polymer substrates.

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Acknowledgements

Publication history

Received: 08 February 2019
Revised: 20 June 2019
Accepted: 20 July 2019
Published: 02 August 2019
Issue date: October 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University.

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