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Nano Research 2019, 12(10): 2485-2489 https://doi.org/10.1007/s12274-019-2472-y
Research Article | Issue | Published: 03 August 2019

Magnetic logic inverter from crossed structures of defect-free graphene with large unsaturated room temperature negative magnetoresistance

Show Author's Information Chao Feng1<,  Junxiang Xiang1<,  Ping Liu1<,  Xiangqi Wang2,  Jianlin Wang3,  Guojing Hu1,  Meng Huang1,  Zhi Wang1,  Zengming Zhang4,  Yuan Liu5,  Yalin Lu1,3( ),  Bin Xiang1( )
Hefei National Research Center for Physical Sciences at the Microscale,Department of Materials Science&Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China,Hefei,230026,China;
Department of Physics,University of Science and Technology of China,Hefei,230026,China;
National Synchrotron Radiation Laboratory,CAS Center for Excellence in Nanoscience, University of Science and Technology of China,Hefei,230026,China;
The Centre for Physical Experiments,University of Science and Technology of China,Hefei,230026,China;
School of Physics and Electronics,Hunan University,Changsha,410082,China;

§ Chao Feng, Junxiang Xiang, and Ping Liu contributed equally to this work.

Keywords:
negative magnetoresistance, magnetic logic inverter, defect-free graphene
Topics:
Computer circuits Defects
Cite this article:
Feng C, Xiang J, Liu P, et al. Magnetic logic inverter from crossed structures of defect-free graphene with large unsaturated room temperature negative magnetoresistance. Nano Research, 2019, 12(10): 2485-2489. https://doi.org/10.1007/s12274-019-2472-y
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Abstract Full text About this article

Introducing defects into graphene has been widely utilized to realize the negative magnetoresistance (MR) effect in graphene. However, the reported graphene negative MR exhibits only ~ 10% under 10 T at room temperature to date, which extremely limits the resolution of future spintronics devices. Moreover, intentional defect introduction can also cause unintentional degradation in graphene's intrinsic properties. In this paper, we report a magnetic logic inverter based on a crossed structure of defect-free graphene, resulting in a substantial gain of 4.81 mV/T while exhibiting room temperature operation. This crossed structure of graphene shows large unsaturated room temperature negative MR with an enhancement of up to 1, 000% at 9 T. A transition behavior between negative and positive MR is observed in this crossed structure and the transition temperature can be tuned by a ratio of the conductivity between in-plane and out-of-plane transport. Our results open an intriguing path for future two-dimensional spintronics device applications.


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About this article

Magnetic logic inverter from crossed structures of defect-free graphene with large unsaturated room temperature negative magnetoresistance

Show Author's information Chao Feng1<, Junxiang Xiang1<, Ping Liu1<, Xiangqi Wang2, Jianlin Wang3, Guojing Hu1, Meng Huang1, Zhi Wang1, Zengming Zhang4, Yuan Liu5, Yalin Lu1,3( ), Bin Xiang1( )
Hefei National Research Center for Physical Sciences at the Microscale,Department of Materials Science&Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China,Hefei,230026,China;
Department of Physics,University of Science and Technology of China,Hefei,230026,China;
National Synchrotron Radiation Laboratory,CAS Center for Excellence in Nanoscience, University of Science and Technology of China,Hefei,230026,China;
The Centre for Physical Experiments,University of Science and Technology of China,Hefei,230026,China;
School of Physics and Electronics,Hunan University,Changsha,410082,China;

§ Chao Feng, Junxiang Xiang, and Ping Liu contributed equally to this work.

Abstract

Introducing defects into graphene has been widely utilized to realize the negative magnetoresistance (MR) effect in graphene. However, the reported graphene negative MR exhibits only ~ 10% under 10 T at room temperature to date, which extremely limits the resolution of future spintronics devices. Moreover, intentional defect introduction can also cause unintentional degradation in graphene's intrinsic properties. In this paper, we report a magnetic logic inverter based on a crossed structure of defect-free graphene, resulting in a substantial gain of 4.81 mV/T while exhibiting room temperature operation. This crossed structure of graphene shows large unsaturated room temperature negative MR with an enhancement of up to 1, 000% at 9 T. A transition behavior between negative and positive MR is observed in this crossed structure and the transition temperature can be tuned by a ratio of the conductivity between in-plane and out-of-plane transport. Our results open an intriguing path for future two-dimensional spintronics device applications.

Keywords: negative magnetoresistance, magnetic logic inverter, defect-free graphene

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Publication history
Copyright
Acknowledgements

Publication history

Received: 15 April 2019
Revised: 12 June 2019
Accepted: 07 July 2019
Published: 03 August 2019
Issue date: October 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

We thank Prof. Zhenhua Qiao and Mr. Tao Hou for valuable discussions. This work was supported by the National Natural Science Foundation Committee of the China Academy of Engineering Physics (NSAF) (No. U1630108) and the joint fund of the National Key Research and Development Program of China (No. 2017YFA0402902) and the National Natural Science Foundation of China (No. 11434009). This research was partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication.

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