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Nano Research 2019, 12(8): 1900-1905 https://doi.org/10.1007/s12274-019-2456-y
Research Article | Issue | Published: 18 June 2019

Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations

Show Author's Information Xiangzhuo Wang1,  Huixia Yang1,2,  Rong Yang3,  Qinsheng Wang1,2,  Jingchuan Zheng1,  Lu Qiao1,  Xianglin Peng1,  Yongkai Li1,  Dongyun Chen1,  Xiaolu Xiong1,2,  Junxi Duan1,2,  Guangyu Zhang3,  Jie Ma1,  Junfeng Han1,2( ),  Wende Xiao1,2( ),  Yugui Yao1,2
Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE),Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology,Beijing,100081,China;
Micronano Center,Beijing Institute of Technology,Beijing,100081,China;
Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China;
Keywords:
band gap, transition-metal dichalcogenides, molybdenum selenide, screw dislocations, interlayer coupling
Topics:
Atomic force microscopyChemical vapor depositionEnergy gapMolybdenum compoundsSelenium compoundsSilicaTransition metals
Cite this article:
Wang X, Yang H, Yang R, et al. Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations. Nano Research, 2019, 12(8): 1900-1905. https://doi.org/10.1007/s12274-019-2456-y
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Abstract Full text Electronic supplementary material About this article

The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA-or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices.


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Electronic supplementary material
About this article

Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations

Show Author's information Xiangzhuo Wang1, Huixia Yang1,2, Rong Yang3, Qinsheng Wang1,2, Jingchuan Zheng1, Lu Qiao1, Xianglin Peng1, Yongkai Li1, Dongyun Chen1, Xiaolu Xiong1,2, Junxi Duan1,2, Guangyu Zhang3, Jie Ma1, Junfeng Han1,2( ), Wende Xiao1,2( ), Yugui Yao1,2
Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE),Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology,Beijing,100081,China;
Micronano Center,Beijing Institute of Technology,Beijing,100081,China;
Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China;

Abstract

The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA-or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices.

Keywords: band gap, transition-metal dichalcogenides, molybdenum selenide, screw dislocations, interlayer coupling

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Publication history
Copyright
Acknowledgements

Publication history

Received: 26 March 2019
Revised: 21 May 2019
Accepted: 04 June 2019
Published: 18 June 2019
Issue date: August 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

The work is supported by the National Natural Science Foundation of China (Nos. 11574029, 51661135026, 21773008, 11704027, 11574361, and 11834017), the National Key R & D Program of China (Nos. 2016YFA0300600 and 2016YFA0300904), the Strategic Priority Research Program of Chinese Academy of Sciences (Nos. XDB30000000), the Key Research Program of Frontier Sciences (No. QYZDB-SSW-SLH004) and the Youth Innovation Promotion Association CAS (No. 2018013).

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