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Nano Research 2019, 12(8): 1796-1803 https://doi.org/10.1007/s12274-019-2434-4
Research Article | Issue | Published: 22 May 2019

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Show Author's Information Fangzhou Li1,  SenPo Yip1,2,3,  Ruoting Dong1,2,  Ziyao Zhou1,2,  Changyong Lan1,  Xiaoguang Liang1,  Dapan Li1,  You Meng1,  Xiaolin Kang1,  Johnny C. Ho1,2,3,4( )
Department of Materials Science and Engineering,City University of Hong Kong,Hong Kong,999077,China;
Shenzhen Research Institute,City University of Hong Kong,Shenzhen,518057,China;
State Key Laboratory of Terahertz and Millimeter Waves,City University of Hong Kong,Hong Kong,999077,China;
Centre for Functional Photonics,City University of Hong Kong,Hong Kong,999077,China;
Keywords:
nanowires, InGaZnO, thin-film transistors, superlattice
Topics:
Chemical vapor depositionChromium compoundsField effect transistorsGalliumGallium compoundsIINanowiresSemiconducting indium compounds SuperlatticesThin film circuitsThin filmsTin oxidesVI semiconductors
Cite this article:
Li F, Yip S, Dong R, et al. Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors. Nano Research, 2019, 12(8): 1796-1803. https://doi.org/10.1007/s12274-019-2434-4
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Abstract Full text Electronic supplementary material About this article

Amorphous indium–gallium–zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.


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Electronic supplementary material
About this article

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Show Author's information Fangzhou Li1, SenPo Yip1,2,3, Ruoting Dong1,2, Ziyao Zhou1,2, Changyong Lan1, Xiaoguang Liang1, Dapan Li1, You Meng1, Xiaolin Kang1, Johnny C. Ho1,2,3,4( )
Department of Materials Science and Engineering,City University of Hong Kong,Hong Kong,999077,China;
Shenzhen Research Institute,City University of Hong Kong,Shenzhen,518057,China;
State Key Laboratory of Terahertz and Millimeter Waves,City University of Hong Kong,Hong Kong,999077,China;
Centre for Functional Photonics,City University of Hong Kong,Hong Kong,999077,China;

Abstract

Amorphous indium–gallium–zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.

Keywords: nanowires, InGaZnO, thin-film transistors, superlattice

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Publication history
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Acknowledgements

Publication history

Received: 21 March 2019
Revised: 30 April 2019
Accepted: 10 May 2019
Published: 22 May 2019
Issue date: August 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

This work is financially supported by the National Natural Science Foundation of China (No. 51672229), the General Research Fund (CityU 11211317) and the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, and the Science Technology and Innovation Committee of Shenzhen Municipality (NO. JCYJ20170818095520778), and a grant from the Shenzhen Research Institute, City University of Hong Kong.

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