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Nano Research 2019, 12(7): 1683-1689 https://doi.org/10.1007/s12274-019-2423-7
Research Article | Issue | Published: 30 May 2019

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe2 as high performance contacts for WSe2 transistors

Show Author's Information Bei Zhao1,  Weiqi Dang1,  Xiangdong Yang1,  Jia Li1,  Haihong Bao3,  Kai Wang3,  Jun Luo3,  Zhengwei Zhang1,  Bo Li2,  Haipeng Xie4,  Yuan Liu2,  Xidong Duan1( )
Hunan Key Laboratory of Two-Dimensional Materials,State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University,Changsha,410082,China;
School of Physics and Electronics,Hunan University,Changsha,410082,China;
Center for Electron Microscopy Institute for New Energy Materials and Low-Carbon Technologies School of Materials,Tianjin University of Technology,Tianjin,300384,China;
Hunan Key Laboratory of Super-microstructure and Ultrafast Process,College of Physics and Electronics, Central South University,Changsha,410083,China;
Keywords:
chemical vapor deposition, in situ growth, Schottky barrier, nonlayered NiSe nanosheets, metal-semiconductor junctions
Topics:
Chemical vapor depositionElectrodesField effect transistorsNanosheetsNickel compoundsSelenium compoundsSemiconducting selenium compounds Semiconductor dopingSemiconductor junctions Single crystalsTransition metalsVan der Waals forces
Cite this article:
Zhao B, Dang W, Yang X, et al. van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe2 as high performance contacts for WSe2 transistors. Nano Research, 2019, 12(7): 1683-1689. https://doi.org/10.1007/s12274-019-2423-7
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Abstract Full text Electronic supplementary material About this article

A prerequisite for widespread applications of atomically thin transition metal dichalcogenides in future electronics is to achieve reliable electrical contacts, which is of considerable challenge due to the difficulties in selectively doping and inevitable physical damages of these atomically thin materials during typical metal integration process. Here, we report the in situ growth of ultrathin metallic NiSe single crystals on WSe2 in which the metallic NiSe nanosheets function as the contact electrodes to WSe2, creating an interface that is essentially free from chemical disorder. The NiSe/WSe2 heterostructures also exhibit well-aligned lattice orientation between the two layers, forming a periodic Moiré pattern. Electrical transport studies demonstrate that the NiSe nanosheets exhibit an excellent metallic feature, as evidenced by the extra-high electrical conductivity of up to 1.6×106 S·m-1. The WSe2 transistors with the NiSe contact show field-effect mobilities (μFE) more than double that with Cr/Au electrodes. This study demonstrates an effective pathway to achieve reliable electrical contacts to the atomically thin 2D materials, and maybe readily extended for fabricating 2D/2D low-resistance contacts for a variety of transition metal dichalcogenides.


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Electronic supplementary material
About this article

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe2 as high performance contacts for WSe2 transistors

Show Author's information Bei Zhao1, Weiqi Dang1, Xiangdong Yang1, Jia Li1, Haihong Bao3, Kai Wang3, Jun Luo3, Zhengwei Zhang1, Bo Li2, Haipeng Xie4, Yuan Liu2, Xidong Duan1( )
Hunan Key Laboratory of Two-Dimensional Materials,State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University,Changsha,410082,China;
School of Physics and Electronics,Hunan University,Changsha,410082,China;
Center for Electron Microscopy Institute for New Energy Materials and Low-Carbon Technologies School of Materials,Tianjin University of Technology,Tianjin,300384,China;
Hunan Key Laboratory of Super-microstructure and Ultrafast Process,College of Physics and Electronics, Central South University,Changsha,410083,China;

Abstract

A prerequisite for widespread applications of atomically thin transition metal dichalcogenides in future electronics is to achieve reliable electrical contacts, which is of considerable challenge due to the difficulties in selectively doping and inevitable physical damages of these atomically thin materials during typical metal integration process. Here, we report the in situ growth of ultrathin metallic NiSe single crystals on WSe2 in which the metallic NiSe nanosheets function as the contact electrodes to WSe2, creating an interface that is essentially free from chemical disorder. The NiSe/WSe2 heterostructures also exhibit well-aligned lattice orientation between the two layers, forming a periodic Moiré pattern. Electrical transport studies demonstrate that the NiSe nanosheets exhibit an excellent metallic feature, as evidenced by the extra-high electrical conductivity of up to 1.6×106 S·m-1. The WSe2 transistors with the NiSe contact show field-effect mobilities (μFE) more than double that with Cr/Au electrodes. This study demonstrates an effective pathway to achieve reliable electrical contacts to the atomically thin 2D materials, and maybe readily extended for fabricating 2D/2D low-resistance contacts for a variety of transition metal dichalcogenides.

Keywords: chemical vapor deposition, in situ growth, Schottky barrier, nonlayered NiSe nanosheets, metal-semiconductor junctions

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Publication history
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Acknowledgements

Publication history

Received: 21 February 2019
Revised: 21 April 2019
Accepted: 22 April 2019
Published: 30 May 2019
Issue date: July 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

We acknowledge the financial support from the Fundamental Research Funds of the Central Universities (No. 531107051078), the Double First-Class University Initiative of Hunan University (No. 531109100004), and the 111 Project of China (No. D17003). We also acknowledge the support from the National Natural Science Foundation of China (No. 751214296, 51802090, 61874041, and 61804050), and Hunan Key Laboratory of Two-Dimensional Materials (No. 801200005).

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