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Research Article

Spectroscopic signatures of edge states in hexagonal boron nitride

Chuang Gao1,§Lei Tao1,2,3,§Yu-Yang Zhang1,4( )Shixuan Du1,2,4Sokrates T. Pantelides1,3Juan Carlos Idrobo5Wu Zhou1,4( )Hong-Jun Gao1,2
School of Physical Sciences and CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing,100049,China;
Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China;
Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science,Vanderbilt University,Nashville, TN,37235,USA;
CAS Centre for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing,100049,China;
Center for Nanophase Materials Sciences,Oak Ridge National Laboratory,Oak Ridge, TN,37831,USA;

§ Chuang Gao and Lei Tao contributed equally to this work

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Abstract

We use Z-contrast imaging and atomically resolved electron energy-loss spectroscopy on an aberration-corrected scanning transmission electron microscope to investigate the local electronic states of boron atoms at different edge structures in monolayer and bilayer hexagonal boron nitride (h-BN). We find that edges with bonding unsaturated sp2 boron atoms have a unique spectroscopic signature with a prominent pre-peak at ~ 190.2 eV in the B K-edge fine structure. First-principles calculations reveal that the observed pre-peak arises from excitations to the in-plane lowest-energy empty sp2 boron dangling bonds at the B-terminated edge. This spectroscopic signature can serve as a fingerprint to explore new edge structures in h-BN.

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Nano Research
Pages 1663-1667

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Cite this article:
Gao C, Tao L, Zhang Y-Y, et al. Spectroscopic signatures of edge states in hexagonal boron nitride. Nano Research, 2019, 12(7): 1663-1667. https://doi.org/10.1007/s12274-019-2417-5
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Received: 06 March 2019
Revised: 03 April 2019
Accepted: 12 April 2019
Published: 25 April 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019