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Research Article

Defect engineering of molybdenum disulfide through ion irradiation to boost hydrogen evolution reaction performance

Cheng Sun1,§, Peipei Wang2,§, Hao Wang1, Chuan Xu2, Juntong Zhu1, Yanxia Liang2, Ying Su1, Yining Jiang1, Wenqi Wu1, Engang Fu2( ), Guifu Zou1( )
Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province,Soochow University,Suzhou,215006,China;
State Key Laboratory of Nuclear Physics and Technology,School of Physics, Peking University,Beijing,100871,China;

§ Cheng Sun and Peipei Wang contributed equally to this work.

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Abstract

The inert basal plane of molybdenum disulfide (MoS2) restrains its further hydrogen evolution reaction (HER) performance. This work attempts ion irradiation to activate inert basal plane of MoS2 nanosheet to improve its electrocatalytic performance. Experimental results demonstrate the sulphur vacancies generated by ion irradiation on the basal plane of MoS2 mainly boost the efficiency of HER performance. The moderate fluence of carbon ion irradiation gains the optimum HER performance with an onset potential of 77 mV and Tafel slope of 66 mV/dec.

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Keywords

MoS2 nanosheetion irradiationelectrocatalysthydrogen evolution reactionsulphur vacancy

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Nano Research
Volume 12 Issue 7,
July 2019
Pages 1613-1618
DOI: 10.1007/s12274-019-2400-1

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Cite this article:
Sun C, Wang P, Wang H, et al. Defect engineering of molybdenum disulfide through ion irradiation to boost hydrogen evolution reaction performance. Nano Research, 2019, 12(7): 1613-1618. https://doi.org/10.1007/s12274-019-2400-1
Topics:
ElectrocatalystsHydrogenIonsLayered semiconductorsNanosheetsSulfur compounds

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Received: 14 February 2019
Revised: 22 March 2019
Accepted: 01 April 2019
Published: 23 April 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019