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Nano Research 2019, 12(3): 669-674 https://doi.org/10.1007/s12274-019-2275-1
Research Article | Issue | Published: 03 January 2019

Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Show Author's Information Jingkai Qin1,2,3,  Hang Yan1,3,  Gang Qiu2,  Mengwei Si2,  Peng Miao4,  Yuqin Duan2,  Wenzhu Shao3,  Liang Zhen1,3,  Chengyan Xu1,3( ),  Peide D Ye2( )
State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin,150001,China;
School of Electrical and Computer Engineering,Purdue University,West Lafayette, IN,47907,USA;
School of Materials Science and Engineering,Harbin Institute of Technology,Harbin,150001,China;
School of Chemistry and Chemical Engineering,Harbin Institute of Technology,Harbin,150001,China;
Keywords:
van der Waals heterostructures, ReS2, trigonal selenium (t-Se) nanobelt, phototransistor
Topics:
Chemical vapor depositionNanobelts Optoelectronic devicesPhototransistorsRhenium compoundsSelenium compoundsVan der Waals forces
Cite this article:
Qin J, Yan H, Qiu G, et al. Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures. Nano Research, 2019, 12(3): 669-674. https://doi.org/10.1007/s12274-019-2275-1
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Abstract Full text Electronic supplementary material About this article

The combination of mixed-dimensional semiconducting materials can provide additional freedom to construct integrated nanoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performance dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separation efficiency of photogenerated electron–hole pairs can be greatly improved due to the high-quality interfacial contact between t-Se nanobelts and ReS2 films. Compared with bare ReS2 film devices, the dual-channel phototransistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D*) up to 98 A·W–1 and 6 × 1010 Jones at 400 nm illumination with an intensity of 1.7 mW·cm-2, respectively. Besides, the response time can also be reduced by three times of magnitude to less than 50 ms due to the type-Ⅱ band alignment at the interface. This study opens up a promising avenue for high-performance photodetectors by constructing mixed-dimensional heterostructures.


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Electronic supplementary material
About this article

Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Show Author's information Jingkai Qin1,2,3, Hang Yan1,3, Gang Qiu2, Mengwei Si2, Peng Miao4, Yuqin Duan2, Wenzhu Shao3, Liang Zhen1,3, Chengyan Xu1,3( ), Peide D Ye2( )
State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin,150001,China;
School of Electrical and Computer Engineering,Purdue University,West Lafayette, IN,47907,USA;
School of Materials Science and Engineering,Harbin Institute of Technology,Harbin,150001,China;
School of Chemistry and Chemical Engineering,Harbin Institute of Technology,Harbin,150001,China;

Abstract

The combination of mixed-dimensional semiconducting materials can provide additional freedom to construct integrated nanoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performance dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separation efficiency of photogenerated electron–hole pairs can be greatly improved due to the high-quality interfacial contact between t-Se nanobelts and ReS2 films. Compared with bare ReS2 film devices, the dual-channel phototransistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D*) up to 98 A·W–1 and 6 × 1010 Jones at 400 nm illumination with an intensity of 1.7 mW·cm-2, respectively. Besides, the response time can also be reduced by three times of magnitude to less than 50 ms due to the type-Ⅱ band alignment at the interface. This study opens up a promising avenue for high-performance photodetectors by constructing mixed-dimensional heterostructures.

Keywords: van der Waals heterostructures, ReS2, trigonal selenium (t-Se) nanobelt, phototransistor

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Acknowledgements

Publication history

Received: 25 October 2018
Revised: 04 December 2018
Accepted: 20 December 2018
Published: 03 January 2019
Issue date: March 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

The work is in part supported by the National Natural Science Foundation of China (Nos. 51572057 and 51772064), AFOSR/NSF EFRI 2DARE program, ARO and SRC.

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