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Nano Research 2019, 12(3): 563-568 https://doi.org/10.1007/s12274-018-2254-y
Research Article | Issue | Published: 28 December 2018

Doping modulated in-plane anisotropic Raman enhancement on layered ReS2

Show Author's Information Na Zhang1,  Jingjing Lin1,  Shuqing Zhang1,  Shishu Zhang1,  Xiaobo Li2,  Dongyan Liu2,  Hua Xu2,  Jin Zhang1,  Lianming Tong1( )
Center for Nanochemistry,Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University,Beijing,100871,China;
School of Materials Science and Engineering,Shaanxi Normal University,Xi'an,710119,China;
Keywords:
anisotropy, charge transfer, ReS2, Raman enhancement, electrons doping
Topics:
Charge transferGoldOptical latticesRhenium compoundsSemiconductor doping
Cite this article:
Zhang N, Lin J, Zhang S, et al. Doping modulated in-plane anisotropic Raman enhancement on layered ReS2. Nano Research, 2019, 12(3): 563-568. https://doi.org/10.1007/s12274-018-2254-y
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Abstract Full text Electronic supplementary material About this article

Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.


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Electronic supplementary material
About this article

Doping modulated in-plane anisotropic Raman enhancement on layered ReS2

Show Author's information Na Zhang1, Jingjing Lin1, Shuqing Zhang1, Shishu Zhang1, Xiaobo Li2, Dongyan Liu2, Hua Xu2, Jin Zhang1, Lianming Tong1( )
Center for Nanochemistry,Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University,Beijing,100871,China;
School of Materials Science and Engineering,Shaanxi Normal University,Xi'an,710119,China;

Abstract

Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.

Keywords: anisotropy, charge transfer, ReS2, Raman enhancement, electrons doping

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Publication history
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Acknowledgements

Publication history

Received: 13 September 2018
Revised: 11 November 2018
Accepted: 25 November 2018
Published: 28 December 2018
Issue date: March 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Acknowledgements

Acknowledgements

The authors thank J. Guan and B. Ma for the vacuum thermal deposition, L. Sun for providing the graphene sample, and S. Jiang for the CVD-grown ReS2 sample. This work was supported by the National Natural Science Foundation of China (Nos. 51432002, 51720105003, 21790052, 11374355 and 21573004), the Ministry of Science and Technology of China (Nos. 2016YFA0200100 and 2015CB932400), and the Beijing Municipal Science and Technology Project (No. Z161100002116026).

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