Journal Home > Volume 12 , issue 3

Two-dimensional black phosphorus (BP) generally exhibits a hole-dominated transport characteristic when configured as field-effect transistor devices. The effective control of charge carrier type and concentration is very crucial for the application of BP in complementary electronics. Herein, we report a facile and effective electron doping methodology on BP, through in situ surface modification with aluminum (Al). The electron mobility of few-layer BP is found to be largely enhanced to ~ 10.6 cm2·V-1·s-1 by over 6 times after aluminum modification. In situ photoelectron spectroscopy characterization reveals the formation of Al-P covalent bond at the interface, which can also serve as local gate to tune the transport properties in BP layers. Finally, a spatially-controlled aluminum doping technique is employed to establish a p-n homojunction on a single BP flake, and hence to realize the complementary inverter devices, where the highest gain value of ~ 33 is obtained.

File
12274_2018_2246_MOESM1_ESM.pdf (2.9 MB)
Publication history
Copyright
Acknowledgements
Rights and permissions

Publication history

Received: 30 June 2018
Revised: 05 November 2018
Accepted: 12 November 2018
Published: 21 November 2018
Issue date: March 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Acknowledgements

Acknowledgements

Authors acknowledge the financial support from the National Natural Science Foundation of China (Nos. 21573156 and 21872100), Natural Science Foundation of Jiangsu Province (No. BK20170005), Singapore MOE Grants R143-000-652-112 and R143-000-A43-114, and Fundamental Research Foundation of Shenzhen (No. JCYJ20170817100405375).

Rights and permissions

Reprints and Permission requests may be sought directly from editorial office.
Email: nanores@tup.tsinghua.edu.cn

Return