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Nano Research 2019, 12(2): 339-344 https://doi.org/10.1007/s12274-018-2220-8
Research Article | Issue | Published: 29 October 2018

High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure

Show Author's Information Xiao Liu1,  Guangzhuang Sun2,  Peng Chen2,  Junchi Liu1,  Zhengwei Zhang2,  Jia Li2,  Huifang Ma2,  Bei Zhao2,  Ruixia Wu2,  Weiqi Dang2,  Xiangdong Yang2,  Chen Dai2,  Xuwan Tang2,  Zhuojun Chen1,  Lili Miao1,  Xingqiang Liu1,  Bo Li1( ),  Yuan Liu1,  Xidong Duan2( )
Department of Applied Physics,School of Physics and Electronics, Hunan University,Changsha,410082,China;
State Key Laboratory for Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering, Hunan University,Changsha,410082,China;
Keywords:
two-dimensional, asymmetric electrode, photodiode, van der Waals (vdWs) heterostructure, optoelectronics
Topics:
HeterojunctionsOptoelectronic devicesPhotodiodesSelenium compoundsSilicaVan der Waals forces
Cite this article:
Liu X, Sun G, Chen P, et al. High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure. Nano Research, 2019, 12(2): 339-344. https://doi.org/10.1007/s12274-018-2220-8
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Abstract Full text About this article

Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties.Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on SiO2/Si substrate, the thickness of Sb nanosheet on WSe2 can be reduced effectively to monolayer.We construct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures.Electrical transport measurements indicate that the photodiode show obvious rectifying effect.Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW.The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics.


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About this article

High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure

Show Author's information Xiao Liu1, Guangzhuang Sun2, Peng Chen2, Junchi Liu1, Zhengwei Zhang2, Jia Li2, Huifang Ma2, Bei Zhao2, Ruixia Wu2, Weiqi Dang2, Xiangdong Yang2, Chen Dai2, Xuwan Tang2, Zhuojun Chen1, Lili Miao1, Xingqiang Liu1, Bo Li1( ), Yuan Liu1, Xidong Duan2( )
Department of Applied Physics,School of Physics and Electronics, Hunan University,Changsha,410082,China;
State Key Laboratory for Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering, Hunan University,Changsha,410082,China;

Abstract

Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties.Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on SiO2/Si substrate, the thickness of Sb nanosheet on WSe2 can be reduced effectively to monolayer.We construct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures.Electrical transport measurements indicate that the photodiode show obvious rectifying effect.Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW.The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics.

Keywords: two-dimensional, asymmetric electrode, photodiode, van der Waals (vdWs) heterostructure, optoelectronics

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Publication history
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Acknowledgements

Publication history

Received: 15 September 2018
Revised: 07 October 2018
Accepted: 10 October 2018
Published: 29 October 2018
Issue date: February 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Acknowledgements

Acknowledgements

We acknowledge support from the National Natural Science Foundation of China (Nos. 61804050 and 51872086), the Double First-Class Initiative of Hunan University (No. 531109100004), and the Fundamental Research Funds of the Central Universities (Nos. 531107051078 and 531107051055).

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