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Nano Research 2019, 12(1): 149-157 https://doi.org/10.1007/s12274-018-2194-6
Research Article | Issue | Published: 28 September 2018

Space-confined growth of monolayer ReSe2 under a graphene layer on Au foils

Show Author's Information Chunyu Xie1,2,§,  Shaolong Jiang1,2,§,  Xiaolong Zou3,§,  Yuanwei Sun4,5,  Liyun Zhao1,  Min Hong1,2,  Shulin Chen4,6,  Yahuan Huan1,2,  Jianping Shi1,2,  Xiebo Zhou1,2,  Zhepeng Zhang1,2,  Pengfei Yang1,2,  Yuping Shi1,2,  Porun Liu7,  Qing Zhang1,  Peng Gao4,5,8,  Yanfeng Zhang1,2( )
Department of Materials Science and Engineering,College of Engineering, Peking University,Beijing,100871,China;
Center for Nanochemistry (CNC),Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University,Beijing,100871,China;
Tsinghua-Berkeley Shenzhen Institute (TBSI),Tsinghua University,Shenzhen,518055,China;
Electron Microscopy Laboratory,School of Physics, Peking University,Beijing,100871,China;
International Center for Quantum Materials,School of Physics, Peking University,Beijing,100871,China;
State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin,150001,China;
Centre for Clean Environment and Energy,Griffith University,Gold Coast,4222,Australia;
Collaborative Innovation Center of Quantum Matter,Beijing,100871,China;

§ Chunyu Xie, Shaolong Jiang, and Xiaolong Zou contributed equally to this work.

Keywords:
graphene, chemical vapor deposition, scanning tunneling microscopy, rhenium selenide, two-dimensional (2D) heterostructure
Topics:
Chemical vapor depositionDensity functional theoryGoldGrapheneMonolayersOptoelectronic devicesScanning tunneling microscopyVan der Waals forces
Cite this article:
Xie C, Jiang S, Zou X, et al. Space-confined growth of monolayer ReSe2 under a graphene layer on Au foils. Nano Research, 2019, 12(1): 149-157. https://doi.org/10.1007/s12274-018-2194-6
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Abstract Full text Electronic supplementary material About this article

Vertical heterostructures based on two-dimensional (2D) materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices. Herein, we report the direct construction of an abnormal graphene/ReSe2 stack on Au foils by a two-step chemical vapor deposition (CVD) strategy. During the second growth stage, monolayer ReSe2 is found to preferentially evolve at the interface between the first-grown graphene layer and the Au substrate. The unusual stacking behavior is unraveled by in-situ pcutting openq the upper graphene from the defects to expose the lower ReSe2 using scanning tunneling microscopy (STM). From combination of these results with density functional theory calculations, the domain boundaries and edge sites of graphene are proposed to be adsorption sites for Re and Se precursors, further facilitating the growth of ReSe2 at the van der Waals gap of graphene/Au. This work hereby offers an intriguing strategy for obtaining vertical 2D heterostructures featured with an ultra-clean interface and a designed stacking geometry.


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Abstract
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Electronic supplementary material
About this article

Space-confined growth of monolayer ReSe2 under a graphene layer on Au foils

Show Author's information Chunyu Xie1,2,§, Shaolong Jiang1,2,§, Xiaolong Zou3,§, Yuanwei Sun4,5, Liyun Zhao1, Min Hong1,2, Shulin Chen4,6, Yahuan Huan1,2, Jianping Shi1,2, Xiebo Zhou1,2, Zhepeng Zhang1,2, Pengfei Yang1,2, Yuping Shi1,2, Porun Liu7, Qing Zhang1, Peng Gao4,5,8, Yanfeng Zhang1,2( )
Department of Materials Science and Engineering,College of Engineering, Peking University,Beijing,100871,China;
Center for Nanochemistry (CNC),Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University,Beijing,100871,China;
Tsinghua-Berkeley Shenzhen Institute (TBSI),Tsinghua University,Shenzhen,518055,China;
Electron Microscopy Laboratory,School of Physics, Peking University,Beijing,100871,China;
International Center for Quantum Materials,School of Physics, Peking University,Beijing,100871,China;
State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin,150001,China;
Centre for Clean Environment and Energy,Griffith University,Gold Coast,4222,Australia;
Collaborative Innovation Center of Quantum Matter,Beijing,100871,China;

§ Chunyu Xie, Shaolong Jiang, and Xiaolong Zou contributed equally to this work.

Abstract

Vertical heterostructures based on two-dimensional (2D) materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices. Herein, we report the direct construction of an abnormal graphene/ReSe2 stack on Au foils by a two-step chemical vapor deposition (CVD) strategy. During the second growth stage, monolayer ReSe2 is found to preferentially evolve at the interface between the first-grown graphene layer and the Au substrate. The unusual stacking behavior is unraveled by in-situ pcutting openq the upper graphene from the defects to expose the lower ReSe2 using scanning tunneling microscopy (STM). From combination of these results with density functional theory calculations, the domain boundaries and edge sites of graphene are proposed to be adsorption sites for Re and Se precursors, further facilitating the growth of ReSe2 at the van der Waals gap of graphene/Au. This work hereby offers an intriguing strategy for obtaining vertical 2D heterostructures featured with an ultra-clean interface and a designed stacking geometry.

Keywords: graphene, chemical vapor deposition, scanning tunneling microscopy, rhenium selenide, two-dimensional (2D) heterostructure

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Acknowledgements

Publication history

Received: 28 June 2018
Revised: 09 August 2018
Accepted: 04 September 2018
Published: 28 September 2018
Issue date: January 2019

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© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 51472008, 51861135201, 51290272, 61774003, 51502007, and 51672007), the National Key Research and Development Program of China (Nos. 2016YFA0200103, 2017YFA0205700, and 2017YFA0304600), the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Nos. KF201601 and KF201604) and "2011 Program" Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter. The authors acknowledge Electron Microscopy Laboratory in Peking University for the use of Cs corrected electron microscope. The theoretical simulations of this work were supported by the Youth 1000-Talent Program of China, the Shenzhen Basic Research Project (No. JCYJ20170407155608882), and the Development and Reform Commission of Shenzhen Municipality for the development of the "Low-Dimensional Materials and Devices" Discipline. The computations were carried out at National Supercomputer Center in Tianjin, and the calculations were performed on TianHe-1 (A).

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