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Two-dimensional (2D) semiconductors, represented by 2D transition metal dichalcogenides (TMDs), exhibit rich valley physics due to strong spin-orbit/spin-valley coupling. The most common way to probe such 2D systems is to utilize optical methods, which can monitor light emissions from various excitonic states and further help in understanding the physics behind such phenomena. Therefore, 2D TMDs with good optical quality are in great demand. Here, we report a method to directly grow epitaxial WS2 and MoS2 monolayers on hexagonal boron nitride (hBN) flakes with a high yield and high optical quality; these monolayers show better intrinsic light emission features than exfoliated monolayers from natural crystals. For the first time, the valley Zeeman splitting of WS2 and MoS2 monolayers on hBN has been visualized and systematically investigated. This study paves a new way to produce high optical quality WS2 and MoS2 monolayers and to exploit their intrinsic properties in a multitude of applications.
This work is supported by the National Natural Science Foundation of China (Nos. 61774040, 11774170, and 61774042), the Opening project of State Key Laboratory of Functional Materials for Informatics (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences), the National Young 1000 Talent Plan of China, the Shanghai Municipal Natural Science Foundation (Nos. 16ZR1402500, 17ZR1446500, and 17ZR1446600), NTU Start-up grant M4080513, Singapore Ministry of Education (MOE) Tier 1 RG199/17, and Shanghai Pujiang Program (No. 16PJ1401000). C. C. thanks Dr. Ute Schmidt from WITec Company for AFM measurement.