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Nano Research 2018, 11(11): 5935-5945 https://doi.org/10.1007/s12274-018-2106-9
Research Article | Issue | Published: 14 June 2018

Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors

Show Author's Information Ziyao Zhou1,3,  Changyong Lan1,2,  SenPo Yip1,3,4,  Renjie Wei1,3,  Dapan Li1,3,  Lei Shu1,3,4,  Johnny C. Ho1,3,4( )
Department of Materials Science and EngineeringCity University of Hong KongKowloonHong Kong999077China
School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
Shenzhen Research InstituteCity University of Hong KongShenzhen518057China
State Key Laboratory of Millimeter WavesCity University of Hong KongKowloonHong Kong999077China
Keywords:
oxygen vacancy, chemical vapor deposition, mobility, nanowire, In2O3 , In2xGa2-2xO3
Cite this article:
Zhou Z, Lan C, Yip S, et al. Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors. Nano Research, 2018, 11(11): 5935-5945. https://doi.org/10.1007/s12274-018-2106-9
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Abstract Full text Electronic supplementary material About this article

Recently, owing to the excellent electrical and optical properties, n-type In2O3 nanowires (NWs) have attracted tremendous attention for application in memory devices, solar cells, and ultra-violet photodetectors. However, the relatively low electron mobility of In2O3 NWs grown by chemical vapor deposition (CVD) has limited their further utilization. In this study, utilizing in-situ Ga alloying, highly crystalline, uniform, and thin In2xGa2-2xO3 NWs with diameters down to 30 nm were successfully prepared via ambient-pressure CVD. Introducing an optimal amount of Ga (10 at.%) into the In2O3 lattice was found to effectively enhance the crystal quality and reduce the number of oxygen vacancies in the NWs. A further increase in the Ga concentration adversely induced the formation of a resistive β-Ga2O3 phase, thereby deteriorating the electrical properties of the NWs. Importantly, when configured into global back-gated NW field-effect transistors, the optimized In1.8Ga0.2O3 NWs exhibit significantly enhanced electron mobility reaching up to 750 cm2·V–1·s–1 as compared with that of the pure In2O3 NW, which can be attributed to the reduction in the number of oxygen vacancies and ionized impurity scattering centers. Highly ordered NW parallel arrayed devices were also fabricated to demonstrate the versatility and potency of these NWs for next-generation, large-scale, and high-performance nanoelectronics, sensors, etc.


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About this article

Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors

Show Author's information Ziyao Zhou1,3, Changyong Lan1,2, SenPo Yip1,3,4, Renjie Wei1,3, Dapan Li1,3, Lei Shu1,3,4, Johnny C. Ho1,3,4( )
Department of Materials Science and EngineeringCity University of Hong KongKowloonHong Kong999077China
School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
Shenzhen Research InstituteCity University of Hong KongShenzhen518057China
State Key Laboratory of Millimeter WavesCity University of Hong KongKowloonHong Kong999077China

Abstract

Recently, owing to the excellent electrical and optical properties, n-type In2O3 nanowires (NWs) have attracted tremendous attention for application in memory devices, solar cells, and ultra-violet photodetectors. However, the relatively low electron mobility of In2O3 NWs grown by chemical vapor deposition (CVD) has limited their further utilization. In this study, utilizing in-situ Ga alloying, highly crystalline, uniform, and thin In2xGa2-2xO3 NWs with diameters down to 30 nm were successfully prepared via ambient-pressure CVD. Introducing an optimal amount of Ga (10 at.%) into the In2O3 lattice was found to effectively enhance the crystal quality and reduce the number of oxygen vacancies in the NWs. A further increase in the Ga concentration adversely induced the formation of a resistive β-Ga2O3 phase, thereby deteriorating the electrical properties of the NWs. Importantly, when configured into global back-gated NW field-effect transistors, the optimized In1.8Ga0.2O3 NWs exhibit significantly enhanced electron mobility reaching up to 750 cm2·V–1·s–1 as compared with that of the pure In2O3 NW, which can be attributed to the reduction in the number of oxygen vacancies and ionized impurity scattering centers. Highly ordered NW parallel arrayed devices were also fabricated to demonstrate the versatility and potency of these NWs for next-generation, large-scale, and high-performance nanoelectronics, sensors, etc.

Keywords: oxygen vacancy, chemical vapor deposition, mobility, nanowire, In2O3 , In2xGa2-2xO3

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Publication history
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Acknowledgements

Publication history

Received: 07 March 2018
Revised: 26 April 2018
Accepted: 22 May 2018
Published: 14 June 2018
Issue date: November 2018

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Acknowledgements

Acknowledgements

We acknowledge the General Research Fund (No. CityU 11275916) and the Theme-based Research Scheme (No. T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, the National Natural Science Foundation of China (Nos. 51672229 and 61605024), the Science Technology and Innovation Committee of Shenzhen Municipality (No. JCYJ20160229165240684) and a grant from the Shenzhen Research Institute, City University of Hong Kong.

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