Voltage-controlled reverse filament growth boosts resistive switching memory
),
Umberto Celano1,§(
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Nonvolatile memory devices based on filamentary resistance switching (RS) areamong the frontrunners to fuel future devices and sensors of the internet of things (IoT) era. The capability of many metal-insulator-metal cells to switch between two distinctive resistive states in response to an external electrical stimulus has been demonstrated. Through years of selection, cells based on the drift of metal ions, namely conductive-bridge memory devices, have shown a wide range of applications with nanosecond switching speeds, nanometer scalability, high-density, and low power-consumption. However, for low (sub-10-μA) current operation, a critical challenge is still represented by programming variability and by the stability of the conductive filament over time. Here, by introducing the concept of reverse filament growth (RFG), we managed to control the structural reconfiguration of the conductive filament inside a memory cell with significant enhancements of each of the aforementioned properties. A first-in-class Cu-based switching device is demonstrated, with a dedicated stack that enabled us to systematically trigger RFG, thus tuning the device's properties. Along with nanosecond switching speeds, we achieved an endurance of up to 106 cycles with a 102 read window, with outstanding disturb immunity and optimal stability of the filament over time. Furthermore, by tuning the filament's shape, an excellent control of multi-level bit operations was achieved. Thus, this device offers high flexibility in memory applications.
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Voltage-controlled reverse filament growth boosts resistive switching memory
), Umberto Celano1,§(
),
Abstract
Nonvolatile memory devices based on filamentary resistance switching (RS) areamong the frontrunners to fuel future devices and sensors of the internet of things (IoT) era. The capability of many metal-insulator-metal cells to switch between two distinctive resistive states in response to an external electrical stimulus has been demonstrated. Through years of selection, cells based on the drift of metal ions, namely conductive-bridge memory devices, have shown a wide range of applications with nanosecond switching speeds, nanometer scalability, high-density, and low power-consumption. However, for low (sub-10-μA) current operation, a critical challenge is still represented by programming variability and by the stability of the conductive filament over time. Here, by introducing the concept of reverse filament growth (RFG), we managed to control the structural reconfiguration of the conductive filament inside a memory cell with significant enhancements of each of the aforementioned properties. A first-in-class Cu-based switching device is demonstrated, with a dedicated stack that enabled us to systematically trigger RFG, thus tuning the device's properties. Along with nanosecond switching speeds, we achieved an endurance of up to 106 cycles with a 102 read window, with outstanding disturb immunity and optimal stability of the filament over time. Furthermore, by tuning the filament's shape, an excellent control of multi-level bit operations was achieved. Thus, this device offers high flexibility in memory applications.
References(25)
Yang, J. J.; Strukov, D. B.; Stewart, D. R. Memristive devices for computing. Nat. Nanotechnol. 2013, 8, 13-24.
Waser, R.; Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 2007, 6, 833-840.
Zahurak, J.; Miyata, K.; Fischer, M.; Balakrishnan, M.; Chhajed, S.; Wells, D.; Li, H.; Torsi, A.; Lim, J.; Korber, M. et al. Process integration of a 27 nm, 16 Gb Cu ReRAM. In Proceedings of 2014 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 2014, pp 6.2.1-6.2.4.
Goux, L.; Sankaran, K.; Kar, G.; Jossart, N.; Opsomer, K.; Degraeve, R.; Rignanese, G. M.; Detavernier, C.; Clima, S.; Chen, Y. Y. et al. Field-driven ultrafast sub-ns programming in W/Al2O3/Ti/CuTe-based 1T1R CBRAM system. In Symposium on VLSI Technology (VLSIT), Honolulu, HI, USA, 2012, pp 69-70.
Goux, L.; Valov, I. Electrochemical processes and device improvement in conductive bridge RAM cells. Phys. Status Solidi Appl. Mater. Sci. 2016, 213, 274-288.
Celano, U.; Goux, L.; Belmonte, A.; Opsomer, K.; Franquet, A.; Schulze, A.; Detavernier, C.; Richard, O.; Bender, H.; Jurczak, M. et al. Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. Nano Lett. 2014, 14, 2401-2406.
Wang, H.; Meng, F. B.; Cai, Y. R.; Zheng, L. Y.; Li, Y. G.; Liu, Y. J.; Jiang, Y. Y.; Wang, X. T.; Chen, X. D. Sericin for resistance switching device with multilevel nonvolatile memory. Adv. Mater. 2013, 25, 5498-5503.
Yang, Y. C.; Gao, P.; Li, L. Z.; Pan, X. Q.; Tappertzhofen, S.; Choi, S.; Waser, R.; Valov, I.; Lu, W. D. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat. Commun. 2014, 5, 4232.
Valov, I.; Kozicki, M. N. Cation-based resistance change memory. J. Phys. D: Appl. Phys. 2013, 46, 074005.
Onofrio, N.; Guzman, D.; Strachan, A. Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells. Nat. Mater. 2015, 14, 440-446.
Woo, J.; Hwang, H. Communication—Impact of filament instability in an Ag2S-based conductive-bridge RAM for cross-point selector applications. ECS J. Solid State Sci. Technol. 2016, 5, Q98-Q100.
Chen, W.; Barnaby, H. J.; Kozicki, M. N. Volatile and non-volatile switching in Cu-SiO2 programmable metallization cells. IEEE Electron Device Lett. 2016, 37, 580-583.
Yang, Y. C.; Lu, W. Nanoscale resistive switching devices: Mechanisms and modeling. Nanoscale 2013, 5, 10076-10092.
van Wees, B. J.; van Houten, H.; Beenakker, C. W. J.; Williamson, J. G.; Kouwenhoven, L. P.; van der Marel, D.; Foxon, C. T. Quantized conductance of point contacts in a two-dimensional electron gas. Phys. Rev. Lett. 1988, 60, 848-850.
Celano, U.; Goux, L.; Belmonte, A.; Opsomer, K.; Degraeve, R.; Detavernier, C.; Jurczak, M.; Vandervorst, W. Understanding the dual nature of the filament dissolution in conductive bridging devices. J. Phys. Chem. Lett. 2015, 6, 1919-1924.
Liu, S.; Lu, N. D.; Zhao, X. L.; Xu, H.; Banerjee, W.; Lv, H. B.; Long, S. B.; Li, Q. J.; Liu, Q, Liu, M. Memory devices: Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory (Adv. Mater. 48/2016). Adv. Mater. 2016, 28, 10809.
Celano, U.; Goux, L.; Degraeve, R.; Fantini, A.; Richard, O.; Bender, H.; Jurczak, M.; Vandervorst, W. Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory. Nano Lett. 2015, 15, 7970-7975.
Belmonte, A.; Degraeve, R.; Fantini, A.; Kim, W.; Houssa, M.; Jurczak, M.; Goux, L. Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability. Appl. Phys. Lett. 2014, 104, 233508.
Woo, J.; Belmonte, A.; Redolfi, A.; Hwang, H.; Jurczak, M.; Goux, L. Introduction of WO3 layer in a Cu-based Al2O3 conductive bridge RAM system for robust cycling and large memory window. IEEE J. Electron Devices Soc. 2016, 4, 163-166.
Kozicki, M. N.; Gopalan, C.; Balakrishnan, M.; Mitkova, M. A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte. IEEE Trans. Nanotechnol. 2006, 5, 535-544.
Gopalan, C.; Kozicki, M. N.; Bhagat, S.; Puthen Thermadam, S. C.; Alford, T. L.; Mitkova, M. Structure of copper-doped tungsten oxide films for solid-state memory. J. Non-Cryst. Solids 2007, 353, 1844-1848.
Belmonte, A.; Celano, U.; Redolfi, A.; Fantini, A.; Muller, R.; Vandervorst, W.; Houssa, M.; Jurczak, M.; Goux, L. Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CDRAM devices. IEEE Trans. Electron Devices 2015, 62, 2007-2013.
Menzel, S.; Böttger, U.; Wimmer, M.; Salinga, M. Physics of the switching kinetics in resistive memories. Adv. Funct. Mater. 2015, 25, 6306-6325.
Wang, Z. R.; Joshi, S.; Savel'ev, S. E.; Jiang, H.; Midya, R.; Lin, P.; Hu, M.; Ge, N.; Strachan, J. P.; Li, Z. Y. et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. Nat. Mater. 2016, 16, 101-108.
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Acknowledgements
We acknowledge the partial funding by IMEC's Industrial Affiliation programs.
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