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Nano Research 2018, 11(6): 2909-2931 https://doi.org/10.1007/s12274-017-1942-3
Review Article | Issue | Published: 22 May 2018

Space-confined vapor deposition synthesis of two dimensional materials

Show Author's Information Shasha Zhou,  Lin Gan( ),  Deli Wang,  Huiqiao Li,  Tianyou Zhai( )
School of Materials Science and EngineeringSchool of Chemistry and Chemical EngineeringHuazhong University of Science and TechnologyWuhan430074China
Keywords:
transition metal dichalcogenides, space confinement, two dimensional, vapor deposition
Cite this article:
Zhou S, Gan L, Wang D, et al. Space-confined vapor deposition synthesis of two dimensional materials. Nano Research, 2018, 11(6): 2909-2931. https://doi.org/10.1007/s12274-017-1942-3
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Abstract Full text About this article

Two dimensional (2D) nanomaterials are promising fundamental building blocks for use in the next-generation semiconductor industry due to their unique geometry and excellent (opto)-electronic properties. However, large scale high quality fabrication of 2D nanomaterials remains challenging. Thus, the development of controllable fabrication methods for 2D materials is essential for their future practical application. In this review, we will discuss the importance of the space-confined vapor deposition strategy in the controllable fabrication of 2D materials and summarize recent progress in the utilization of this strategy for the synthesis of novel materials or structures. Using this method, various high quality ultrathin 2D materials, including large-area graphene and boron nitride, ReS2/ReSe2, HfS2, pyramid-structured multilayer MoS2, and the topological insulators Bi2Se3 and Bi2Te3, have been successfully obtained. Additionally, by utilizing van der Waals epitaxy growth substrates such as mica or other 2D materials, patterned growth of 2D nanomaterials can be easily achieved via a surface-induced growth mechanism. Finally, we provide a short prospect for future development of this strategy.


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About this article

Space-confined vapor deposition synthesis of two dimensional materials

Show Author's information Shasha Zhou, Lin Gan( ), Deli Wang, Huiqiao Li, Tianyou Zhai( )
School of Materials Science and EngineeringSchool of Chemistry and Chemical EngineeringHuazhong University of Science and TechnologyWuhan430074China

Abstract

Two dimensional (2D) nanomaterials are promising fundamental building blocks for use in the next-generation semiconductor industry due to their unique geometry and excellent (opto)-electronic properties. However, large scale high quality fabrication of 2D nanomaterials remains challenging. Thus, the development of controllable fabrication methods for 2D materials is essential for their future practical application. In this review, we will discuss the importance of the space-confined vapor deposition strategy in the controllable fabrication of 2D materials and summarize recent progress in the utilization of this strategy for the synthesis of novel materials or structures. Using this method, various high quality ultrathin 2D materials, including large-area graphene and boron nitride, ReS2/ReSe2, HfS2, pyramid-structured multilayer MoS2, and the topological insulators Bi2Se3 and Bi2Te3, have been successfully obtained. Additionally, by utilizing van der Waals epitaxy growth substrates such as mica or other 2D materials, patterned growth of 2D nanomaterials can be easily achieved via a surface-induced growth mechanism. Finally, we provide a short prospect for future development of this strategy.

Keywords: transition metal dichalcogenides, space confinement, two dimensional, vapor deposition

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Publication history
Copyright
Acknowledgements

Publication history

Received: 28 October 2017
Revised: 26 November 2017
Accepted: 29 November 2017
Published: 22 May 2018
Issue date: June 2018

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2017

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 91622117, 51472097, 51727809, and 21501060), the National Key Research and Development Program of China (No. 2016YFB0401100), the National Basic Research Program of China (No. 2015CB932600), and the Fundamental Research Funds for the Central University (Nos. 2015ZDTD038 and 2017KFKJXX007).

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