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Research Article

Observation of unconventional anomalous Hall effect in epitaxial CrTe thin films

Dapeng Zhao1,§Liguo Zhang1,§Iftikhar Ahmed Malik2,§Menghan Liao1Wenqiang Cui1Xinqiang Cai1Cheng Zheng1Luxin Li1Xiaopeng Hu1Ding Zhang1,3Jinxing Zhang2Xi Chen1,3Wanjun Jiang1,3( )Qikun Xue1,3( )
State Key Laboratory of Low Dimensional Quantum PhysicsDepartment of PhysicsTsinghua UniversityBeijing100084China
Department of PhysicsBeijing Normal UniversityBeijing100875China
Collaborative Innovation Center of Quantum MatterBeijing100084China

§ Dapeng Zhao, Liguo Zhang, and Iftikhar Ahmed Malik contributed equally to this work.

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Abstract

We have studied the magnetic and electrical transport properties of epitaxial NiAs-type CrTe thin films grown on SrTiO3(111) substrates. Unlike rectangle hysteresis loops obtained from magnetic measurements, we have identified intriguing extra bump/dip features from anomalous Hall experiments on the films with thicknesses less than 12 nm. This observed Hall anomaly is phenomenologically consistent with the occurrence of a topological Hall effect(THE) in chiral magnets with a skyrmion phase. Furthermore, the THE contribution can be tuned by the film thickness, showing the key contribution of asymmetric interfaces in stabilizing Néel-type skyrmions. Our work demonstrates that a CrTe thin film on SrTiO3(111) substrates is a good material candidate for studying real-space topological transport.

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Nano Research
Pages 3116-3121

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Cite this article:
Zhao D, Zhang L, Malik IA, et al. Observation of unconventional anomalous Hall effect in epitaxial CrTe thin films. Nano Research, 2018, 11(6): 3116-3121. https://doi.org/10.1007/s12274-017-1913-8
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Received: 07 October 2017
Revised: 31 October 2017
Accepted: 03 November 2017
Published: 22 May 2018
© Tsinghua University Press and Springer-Verlag GmbH Germany 2017