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Nano Research 2018, 11(6): 3233-3243 https://doi.org/10.1007/s12274-017-1855-1
Research Article | Issue | Published: 22 May 2018

Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

Show Author's Information Mengxing Sun1,  Qiyi Fang2,  Dan Xie1( ),  Yilin Sun1,  Liu Qian3,  Jianlong Xu4,  Peng Xiao4,  Changjiu Teng1,  Weiwei Li1,  Tianling Ren1,  Yanfeng Zhang2( )
Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList)Tsinghua UniversityBeijing100084China
Department of Materials Science and EngineeringCollege of EngineeringPeking UniversityBeijing100084China
Department of ChemistryTsinghua UniversityBeijing100084China
Institute of Functional Nano & Soft Materials (FUNSOM)Jiangsu Key Laboratory for Carbon-Based Functional Materials & DevicesSoochow UniversitySuzhou215123China
Keywords:
heterojunction, graphene quantum dots, Si, photodetector, WSe2
Cite this article:
Sun M, Fang Q, Xie D, et al. Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity. Nano Research, 2018, 11(6): 3233-3243. https://doi.org/10.1007/s12274-017-1855-1
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Abstract Electronic supplementary material About this article

A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ~ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ~ 4.51 × 109 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors.

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Acknowledgements

Publication history

Received: 16 June 2017
Revised: 08 September 2017
Accepted: 15 September 2017
Published: 22 May 2018
Issue date: June 2018

Copyright

© Tsinghua University Press and Springer‐Verlag GmbH Germany 2017

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC) (Nos. 51672154 and 51372130), MoST(No. 2016YFA0200200), Natural Science Foundation of Jiangsu Province (No. BK20160328), and Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201517).

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