Journal Home > Volume 11 , Issue 3
Nano Research 2018, 11(3): 1183-1192 https://doi.org/10.1007/s12274-017-1781-2
Research Article | Issue | Published: 02 February 2018

Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates

Show Author's Information Xiaobing Yan1,3,§( ),  Zhenyu Zhou1,§,  Jianhui Zhao1,  Qi Liu2( ),  Hong Wang1,  Guoliang Yuan3,  Jingsheng Chen4
College of Electron and Information EngineeringKey Laboratory of Digital Medical Engineering of Hebei ProvinceKey Laboratory of Optoelectronic Information Materials of Hebei ProvinceHebei UniversityBaoding071002China
Key Laboratory of Microelectronic Devices & Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing210094China
Department of Materials Science and EngineeringNational University of SingaporeSingapore117576Singapore

§ Xiaobing Yan and Zhenyu Zhou contributed equally to this work.

Keywords:
memristor, synapse, flexible, mica
Cite this article:
Yan X, Zhou Z, Zhao J, et al. Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates. Nano Research, 2018, 11(3): 1183-1192. https://doi.org/10.1007/s12274-017-1781-2
Download citation
EndNote(RIS)
BibTeX

583

Views

32

Downloads

Citations

90

Crossref

N/A

WoS

88

Scopus

2

CSCD

Abstract Full text Electronic supplementary material About this article

Flexible memristor devices based on plastic substrates have attracted considerable attention due to their applications in wearable computers and integrated circuits. However, most plastic-substrate memristors cannot function or be grown in high-temperature environments. In this study, scotch-tape-exfoliated mica was used as the flexible memristor substrate in order to resolve these high-temperature issues. Our TiN/ZHO/IGZO memristor, which was constructed using a thin (10 μm) mica substrate, has superior flexibility and thermostability. After bending it 103 times, the device continues to exhibit exceptional electrical characteristics. It can also be implemented for transitions between high and low resistance states, even in temperatures of up to 300 ℃. More importantly, the biological synaptic characteristics of paired-pulse facilitation/depression (PPF/PPD) and spike-timing-dependent plasticity (STDP) were observed through applying different pulse measurement modes. This work demonstrates that flexible memristor devices on mica substrates may potentially allow for the realization of high-temperature memristor applications for biologically-inspired computing systems.


menu
Abstract
Full text
Outline
Electronic supplementary material
About this article

Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates

Show Author's information Xiaobing Yan1,3,§( ), Zhenyu Zhou1,§, Jianhui Zhao1, Qi Liu2( ), Hong Wang1, Guoliang Yuan3, Jingsheng Chen4
College of Electron and Information EngineeringKey Laboratory of Digital Medical Engineering of Hebei ProvinceKey Laboratory of Optoelectronic Information Materials of Hebei ProvinceHebei UniversityBaoding071002China
Key Laboratory of Microelectronic Devices & Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing210094China
Department of Materials Science and EngineeringNational University of SingaporeSingapore117576Singapore

§ Xiaobing Yan and Zhenyu Zhou contributed equally to this work.

Abstract

Flexible memristor devices based on plastic substrates have attracted considerable attention due to their applications in wearable computers and integrated circuits. However, most plastic-substrate memristors cannot function or be grown in high-temperature environments. In this study, scotch-tape-exfoliated mica was used as the flexible memristor substrate in order to resolve these high-temperature issues. Our TiN/ZHO/IGZO memristor, which was constructed using a thin (10 μm) mica substrate, has superior flexibility and thermostability. After bending it 103 times, the device continues to exhibit exceptional electrical characteristics. It can also be implemented for transitions between high and low resistance states, even in temperatures of up to 300 ℃. More importantly, the biological synaptic characteristics of paired-pulse facilitation/depression (PPF/PPD) and spike-timing-dependent plasticity (STDP) were observed through applying different pulse measurement modes. This work demonstrates that flexible memristor devices on mica substrates may potentially allow for the realization of high-temperature memristor applications for biologically-inspired computing systems.

Keywords: memristor, synapse, flexible, mica

References(56)

1

Khan, Y.; Ostfeld, A. E.; Lochner, C. M.; Pierre, A.; Arias, A. C. Monitoring of vital signs with flexible and wearable medical devices. Adv. Mater. 2016, 28, 4373-395.
DOI Google Scholar
2

Chen, G.; Xie, X. M.; Shen, G. Z. Flexible organic-inorganic hybrid photodetectors with n-type phenyl-C61-butyric acid methyl ester (PCBM) and p-type pearl-like GaP nanowires. Nano Res. 2014, 7, 1777-1787.
DOI Google Scholar
3

Lim, H.; Cho, W. J.; Ha, C. S.; Ando, S.; Kim, Y. K.; Park, C. H.; Lee, K. Flexible organic electroluminescent devices based on fluorine-containing colorless polyimide Substrates. Adv. Mater. 2002, 14, 1275-1279.
DOI
4

Watanabe, K.; Iwaki, Y.; Uchida, Y.; Nakamura, D.; Ikeda, H.; Katayama, M.; Cho, T.; Miyake, H.; Yamazaki, S. A foldable OLED display with an in-cell touch sensor having embedded metal-mesh electrodes. J. Soc. Inform. Display 2016, 24, 12-20.
DOI Google Scholar
5

Liang, L.; Li, K.; Xiao, C.; Fan, S. J.; Liu, J.; Zhang, W. S.; Xu, W. H.; Tong, W.; Liao, J. Y.; Zhou, Y. Y. et al. Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device. J. Am. Chem. Soc. 2015, 137, 3102-3108.
DOI Google Scholar
6

Chou, H. H.; Nguyen, A.; Chortos, A.; To, J. W. F.; Lu, C.; Mei, J. G.; Kurosawa, T.; Bae W. G.; ToK, J. B. H.; Bao, Z. A. A chameleon-inspired stretchable electronic skin with interactive colour changing controlled by tactile sensing. Nat. Commun. 2015, 6, 8011.
DOI Google Scholar
7

Cai, Y. M.; Tan, J.; Liu, Y. F.; Lin, M.; Huang, R. A flexible organic resistance memory device for wearable biomedical applications. Nanotechnology 2016, 27, 275206.
DOI Google Scholar
8

Ji, Y.; Cho, B.; Song, S.; Kim, T. W.; Choe, M.; Kahng, Y. H.; Lee, T. Stable switching characteristics of organic nonvolatile memory on a bent flexible substrate. Adv. Mater. 2010, 22, 3071-3075.
DOI Google Scholar
9

Kim, S.; Son, J. H.; Lee, S. H.; You, B. K.; Park, K. I.; Lee, H. K.; Byun, M.; Lee, K. J. Flexible crossbar-structured resistive memory arrays on plastic substrates via inorganic- based laser lift-off. Adv. Mater. 2014, 26, 7480-7487.
DOI Google Scholar
10

Gu, C.; Lee, J. S. Flexible hybrid organic-inorganic perovskite memory. ACS Nano 2016, 10, 5413-5418.
DOI Google Scholar
11

Zhang, P.; Xu, B. H.; Gao, C. X.; Chen, G. L.; Gao, M. Z. Facile synthesis of Co9Se8 quantum dots as charge traps for flexible organic resistive switching memory device. ACS Appl. Mater. Interfaces 2016, 8, 30336-30343.
DOI Google Scholar
12

Wang, Z. R.; Joshi, S.; Savel'ev, S. E.; Jiang, H.; Midya, R.; Lin, P.; Hu, M.; Ge, N.; Strachan, P. J.; Li, Z. Y. et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. Nat. Mater. 2017, 16, 101-108.
DOI Google Scholar
13

Li, Y.; Xu, L.; Zhong, Y. P.; Zhou, Y. X.; Zhong, S. J.; Hu, Y. Z.; Chua, L. O.; Miao, X. S. Associative learning with temporal contiguity in a memristive circuit for large-scale neuromorphic networks. Adv. Electron. Mater. 2015, 1, 1500125.
DOI Google Scholar
14

Jo, S. H.; Chang, T.; Ebong, I.; Bhadviya, B. B.; Mazumder, P.; Lu, W. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 2010, 10, 1297-1301.
DOI Google Scholar
15

Wang, Z. Q.; Xu, H. Y.; Li, X. H.; Yu, H.; Liu, Y. C.; Zhu, X. J. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv. Funct. Mater. 2012, 22, 2759-2765.
DOI Google Scholar
16

Yan, X. B.; Zhou, Z. Y.; Ding, B. F.; Zhao, J. H.; Zhang, Y. Y. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure. J. Mater. Chem. C. 2017, 5, 2259-2267.
DOI Google Scholar
17

Jiang, J.; Guo, J. J.; Wan, X.; Yang, Y.; Xie, H. P.; Niu, D. M.; Yang, J. L.; He, J.; Gao, Y. L.; Wan, Q. 2D MoS2 neuromorphic devices for brain-like computational systems. Small 2017, 13, 1700933.
DOI Google Scholar
18

Kim, S.; Jeong, H. Y.; Kim, S. K.; Choi, S. Y.; Lee, K. J. Flexible memristive memory array on plastic substrates. Nano Lett. 2011, 11, 5438-5442.
DOI Google Scholar
19

Wu, W. F.; Chiou, B. S. Deposition of indium tin oxide films on polycarbonate substrates by radio-frequency magnetron sputtering. Thin Solid Films 1997, 298, 221-227.
DOI Google Scholar
20

Yang, Z. W.; Han, S. H.; Yang, T. L.; Ye, L. N.; Ma, H. L.; Cheng, C. F. ITO films deposited on water-cooled flexible substrate by bias RF magnetron sputtering. Appl. Surf. Sci. 2000, 161, 279-285.
DOI Google Scholar
21

Werner, M. R.; Fahrner, W. R. Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications. IEEE Trans. Ind. Electron. 2011, 48, 249-257.
DOI Google Scholar
22

Cheng, L.; Fenter, P.; Nagy, K. L.; Schlegel, M. L.; Sturchio, N. C. Molecular-scale density oscillations in water adjacent to a mica surface. Phys. Rev. Lett. 2001, 87, 156103.
DOI Google Scholar
23

Schlegel, M. L.; Nagy, K. L.; Fenter, P.; Cheng, L.; Sturchio, N. C.; Jacobsen, S. D. Cation sorption on the muscovite (001) surface in chloride solutions using high-resolution X-ray reflectivity. Geochim. Cosmochim. Acta 2006, 70, 3549-3565.
DOI Google Scholar
24

Scales, P. J.; Grieser, F.; Healy, T. W. Electrokinetics of the muscovite mica-aqueous solution interface. Langmuir 1990, 6, 582-589.
DOI Google Scholar
25

Israelachvili, J. N.; Pashley, R. M. Molecular layering of water at surfaces and origin of repulsive hydration forces. Nature 1983, 306, 249-250.
DOI Google Scholar
26

Kuwahara, Y. Comparison of the surface structure of the tetrahedral sheets of muscovite and phlogopite by AFM. Phys. Chem. Miner. 2001, 28, 1-8.
DOI Google Scholar
27

Hu, J.; Xiao, X. D.; Ogletree, D. F.; Salmeron, M. The structure of molecularly thin films of water on mica in humid environments. Surf. Sci. 1995, 344, 221-236.
DOI Google Scholar
28

Xu, L.; Lio, A.; Hu, J.; Ogletree, D. F.; Salmeron, M. Wetting and capillary phenomena of water on mica. J. Phys. Chem. B 1998, 102, 540-548.
DOI Google Scholar
29

Miranda, P. B.; Xu, L.; Shen, Y. R.; Salmeron, M. Icelike water monolayer adsorbed on mica at room temperature. Phys. Rev. Lett. 1998, 81, 5876-5879.
DOI Google Scholar
30

Antognozzi, M.; Humphris, A. D. L.; Miles, M. J. Observation of molecular layering in a confined water film and study of the layers viscoelastic properties. Appl. Phys. Lett. 2001, 78, 300-302.
DOI Google Scholar
31

Obreimoff, J. W. The splitting strength of mica. Proc. Roy. Soc. Lond. Ser. A, Math. Phys. Eng. Sci. 1930, 127, 290-297.
DOI Google Scholar
32

Wang, Y. F.; Lin, Y. C.; Wang, I. T.; Lin, T. P.; Hou, T. H. Characterization and modeling of nonfilamentary Ta/TaOx/ TiO2/Ti analog synaptic device. Sci. Rep. 2015, 5, 10150.
DOI Google Scholar
33

Campbell, P. A.; Sinnamon, L. J.; Thompson, C. E.; Walmsley, D. G. Atomic force microscopy evidence for K+ domains on freshly cleaved mica. Surf. Sci. 1998, 410, L768-L772.
DOI Google Scholar
34

Kim, Y. S.; Maeda, N.; Kitada, H.; Fujimoto, K.; Kodama, S.; Kawai, A.; Arai, K.; Suzuki, K.; Nakamura, T.; Ohba, T. Advanced wafer thinning technology and feasibility test for 3D integration. Microelectron. Eng. 2013, 107, 65-71.
DOI Google Scholar
35

Poppa, H.; Elliot, A. G. The surface composition of mica substrates. Surf. Sci. 1971, 24, 149-163.
DOI Google Scholar
36

Lee, C.; Park, A.; Cho, Y.; Park, M.; Lee, W. I.; Kim, H. W. Influence of ZnO buffer layer thickness on the electrical and optical properties of indium zinc oxide thin films deposited on PET substrates. Ceram. Int. 2008, 34, 1093-1096.
DOI Google Scholar
37

Baek, Y. J.; Hu, Q. L.; Yoo, J. W.; Choi, Y. J.; Kang, C. J.; Lee, H. H.; Min, S. H.; Kim, H. M.; Kim, K. B.; Yoon, T. S. Tunable threshold resistive switching characteristics of Pt-Fe2O3 core-shell nanoparticle assembly by space charge effect. Nanoscale 2013, 5, 772-779.
DOI Google Scholar
38

Du, C.; Ma, W.; Chang, T.; Sheridan, P.; Lu, W. D. Biorealistic implementation of synaptic functions with oxide memristors through internal ionic dynamics. Adv. Funct. Mater. 2015, 25, 4290-4299.
DOI Google Scholar
39

Li, Y.; Zhong, Y. P.; Zhang, J. J.; Xu, L.; Wang, Q.; Sun, H. J.; Tong, H.; Cheng, X.; M. Miao, X. S. Activity- dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems. Sci. Rep. 2014, 4, 4906.
DOI Google Scholar
40

Li, Y.; Zhong, Y. P.; Xu, L.; Zhang, J. J.; Xu, X. H.; Sun, H. J.; Miao, X. S. Ultrafast synaptic events in a chalcogenide memristor. Sci. Rep. 2013, 3, 1619.
DOI Google Scholar
41

Yang, Y. C.; Lee, J. H.; Lee, S.; Liu, C. H.; Zhong, Z. H.; Lu, W. Oxide resistive memory with functionalized graphene as built-in selector element. Adv. Mater. 2014, 26, 3693-3699.
DOI Google Scholar
42

Chang, S. H.; Lee, J. S.; Chae, S. C.; Lee, S. B.; Liu, C.; Kahng, B.; Kim, D. W.; Noh, T. W. Occurrence of both unipolar memory and threshold resistance switching in a NiO film. Phys. Rev. Lett. 2009, 102, 026801.
DOI Google Scholar
43

Lee, M. J.; Kim, S. I.; Lee, C. B.; Yin, H. X.; Ahn, S. E.; Kang, B. S.; Kim, K. H.; Park, J. C.; Kim, C. J.; Song. I.; et al. Low-temperature-grown transition metal oxide based storage materials and oxide transistors for high-density non- volatile memory. Adv. Funct. Mater. 2009, 19, 1587-1593.
DOI Google Scholar
44

Lee, M. J.; Han, S.; Jeon, S. H.; Park, B. H.; Kang, B. S.; Ahn, S. E.; Kim, K. H.; Lee, C. B.; Kim C. J.; Yoo, I. K. et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Lett. 2009, 9, 1476-1481.
DOI Google Scholar
45

Tseng, H. C.; Chang, T. C.; Huang, J. J.; Yang, P. C.; Chen, Y. T.; Jian, F. Y.; Sze, S. M.; Tsai, M. J. Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment. Appl. Phys. Lett. 2011, 99, 132104.
DOI Google Scholar
46

Zhang, H. J.; Zhang, X. P.; Shi, J. P.; Tian, H. F.; Zhao, Y. G. Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions. Appl. Phys. Lett. 2009, 94, 092111.
DOI Google Scholar
47

Mott, N. F.; Davis, E. A. Electronic Processes in Non- Crystalline Materials; Oxford University Press: Oxford, 1979.
48

Pollak, M. A percolation treatment of dc hopping conduction. J. Non-Cryst. Solids 1972, 11, 1-24.
DOI Google Scholar
49

Yang, Y. C.; Sheridan, P.; Lu, W. Complementary resistive switching in tantalum oxide-based resistive memory devices. Appl. Phys. Lett. 2012, 100, 203112.
DOI Google Scholar
50

Mott, N. F. Conduction in non-crystalline materials: Ⅲ. Localized states in a pseudogap and near extremities of conduction and valence bands. Philos. Mag. 1969, 19, 835-852.
DOI Google Scholar
51

Zhu, X. J.; Du, C.; Jeong, Y.; Lu, W. D. Emulation of synaptic metaplasticity in memristors. Nanoscale 2017, 9, 45-51.
DOI Google Scholar
52

Chang, T.; Jo, S. H.; Kim, K. H.; Sheridan, P.; Gaba, S.; Lu, W. Synaptic behaviors and modeling of a metal oxide memristive device. Appl. Phys. A 2011, 102, 857-863.
DOI Google Scholar
53

Yang, R.; Terabe, K.; Liu, G. Q.; Tsuruoka, T.; Hasegawa, T.; Gimzewski, J. K.; Aono, M. On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration. ACS Nano 2012, 6, 9515-9521.
DOI Google Scholar
54

Yan, X. B.; Hao, H.; Chen, Y. F.; Li, Y. C.; Banerjee, W. Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/ Ga2O3/In-Ga-Zn-O structure. Appl. Phys. Lett. 2014, 105, 093502.
DOI Google Scholar
55

Nian, Y. B.; Strozier, J.; Wu, N. J.; Chen, X.; Ignatiev, A. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev. Lett. 2007, 98, 146403.
DOI Google Scholar
56

Ren, S. X.; Zhang, L. Y.; Dong, J. Y.; Huang, Y. F.; Guo, J. J.; Zhang, L.; Zhao, J.; Zhao X.; Chen, W. Electric field control of magnetism in Ti/ZnO/Pt and Ti/ZnO/SRO devices. J. Mater. Chem. C 2015, 3, 4077-4080.
DOI Google Scholar
File
12274_2017_1781_MOESM1_ESM.pdf (1.8 MB)
Publication history
Copyright
Acknowledgements

Publication history

Received: 09 May 2017
Revised: 25 July 2017
Accepted: 28 July 2017
Published: 02 February 2018
Issue date: March 2018

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany 2017

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 61306098, 61674050 and 61422407), the Natural Science Foundation of Hebei Province (Nos. E2012201088 and E2013201176), the Science Research Program of University in Hebei Province (No. ZH2012019), Top-notch Youth Project of University in Hebei Province (No. BJ2014008), the project of enhancement comprehensive strength of the Midwest universities of Hebei University, the Outstanding Youth Project of Hebei Province (No. F2016201220), the outstanding Youth Cultivation Project of Hebei University (No. 2015JQY01), Project of science and technology activities for overseas researcher (No. CL201602), Post-graduate's Innovation Fund Project of Hebei University (No. X201714), and Baoding Nanyang Research Institute - New Material Technology Platform (17H03).

Return