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Nano Research 2018, 11(3): 1470-1481 https://doi.org/10.1007/s12274-017-1764-3
Research Article | Issue | Published: 02 February 2018

Optical emission spectroscopy diagnosis of energetic Ar ions in synthesis of SiC polytypes by DC arc discharge plasma

Show Author's Information Jian Gao1,  Lei Zhou1,  Jingshuang Liang1,  Ziming Wang1,  Yue Wu2,  Javid Muhammad1,  Xinglong Dong1( ),  Shouzhe Li2,  Hongtao Yu3,  Xie Quan3( )
Key Laboratory of Materials Modification by LaserIon and Electron Beams (Ministry of Education)School of Materials Science and EngineeringDalian University of TechnologyDalian116024China
School of PhysicsDalian University of TechnologyDalian116024China
Key Laboratory of Industrial Ecology and Environmental Engineering (Ministry of Education)School of Environmental Science and TechnologyDalian University of TechnologyDalian116024China
Keywords:
nanostructures, SiC polytype, direct current (DC) arc discharge plasma, optical emission spectroscopy(OES)
Cite this article:
Gao J, Zhou L, Liang J, et al. Optical emission spectroscopy diagnosis of energetic Ar ions in synthesis of SiC polytypes by DC arc discharge plasma. Nano Research, 2018, 11(3): 1470-1481. https://doi.org/10.1007/s12274-017-1764-3
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Abstract Full text Electronic supplementary material About this article

Silicon carbides are basilic ceramics with proper bandgaps (2.4–3.3 eV) and unique optical properties. SiC@C monocrystal nanocapsules with different morphologies, sizes, and crystal types were synthesized via the fast and facile direct current (DC) arc discharge plasma method. The influence of Ar atmosphere on the formation of nanocrystal SiC polytypes was investigated by optical emission spectroscopy (OES) diagnoses on the arc discharge plasma. Boltzmann's plot was used to estimate the temperatures of plasma containing different Ar concentrations as 10, 582 K (in 2 × 104 Pa of Ar partial pressure) and 14, 523 K (in 4 × 104 Pa of Ar partial pressure). It was found that higher energy state of plasma favors the ionization of carbon atoms and promotes the formation of α-SiC, while β-SiC is generally coexistent. Heat-treatment in air was applied to remove the carbon species in as-prepared SiC nanopowders. Thus, the intrinsic characters of SiC polytypes reappeared in the ultraviolet–visible (UV–vis) light absorbance. It was experimentally revealed that the direct bandgap of SiC is 5.72 eV, the indirect bandgap of β-SiC (3C) is 3.13 eV, and the indirect bandgap of α-SiC (6H) is 3.32 eV; visible quantum confinement effect is predicted for these polytypic SiC nanocrystals.


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About this article

Optical emission spectroscopy diagnosis of energetic Ar ions in synthesis of SiC polytypes by DC arc discharge plasma

Show Author's information Jian Gao1, Lei Zhou1, Jingshuang Liang1, Ziming Wang1, Yue Wu2, Javid Muhammad1, Xinglong Dong1( ), Shouzhe Li2, Hongtao Yu3, Xie Quan3( )
Key Laboratory of Materials Modification by LaserIon and Electron Beams (Ministry of Education)School of Materials Science and EngineeringDalian University of TechnologyDalian116024China
School of PhysicsDalian University of TechnologyDalian116024China
Key Laboratory of Industrial Ecology and Environmental Engineering (Ministry of Education)School of Environmental Science and TechnologyDalian University of TechnologyDalian116024China

Abstract

Silicon carbides are basilic ceramics with proper bandgaps (2.4–3.3 eV) and unique optical properties. SiC@C monocrystal nanocapsules with different morphologies, sizes, and crystal types were synthesized via the fast and facile direct current (DC) arc discharge plasma method. The influence of Ar atmosphere on the formation of nanocrystal SiC polytypes was investigated by optical emission spectroscopy (OES) diagnoses on the arc discharge plasma. Boltzmann's plot was used to estimate the temperatures of plasma containing different Ar concentrations as 10, 582 K (in 2 × 104 Pa of Ar partial pressure) and 14, 523 K (in 4 × 104 Pa of Ar partial pressure). It was found that higher energy state of plasma favors the ionization of carbon atoms and promotes the formation of α-SiC, while β-SiC is generally coexistent. Heat-treatment in air was applied to remove the carbon species in as-prepared SiC nanopowders. Thus, the intrinsic characters of SiC polytypes reappeared in the ultraviolet–visible (UV–vis) light absorbance. It was experimentally revealed that the direct bandgap of SiC is 5.72 eV, the indirect bandgap of β-SiC (3C) is 3.13 eV, and the indirect bandgap of α-SiC (6H) is 3.32 eV; visible quantum confinement effect is predicted for these polytypic SiC nanocrystals.

Keywords: nanostructures, SiC polytype, direct current (DC) arc discharge plasma, optical emission spectroscopy(OES)

References(54)

1

Wu, R. B.; Zhou, K.; Yue, C. Y.; Wei, J.; Pan, Y. Recent progress in synthesis, properties and potential applications of SiC nanomaterials. Prog. Mater. Sci. 2015, 72, 1–60.
DOI Google Scholar
2

Ou, Y.; Zhu, X. L.; Jokubavicius, V.; Yakimova, R.; Mortensen, N. A.; Syväjärvi, M.; Xiao, S. S.; Ou, H. Y. Broadband antireflection and light extraction enhancement in fluorescent SiC with nanodome structures. Sci. Rep. 2014, 4, 4662.
DOI Google Scholar
3

Minella, A. B.; Pohl, D.; Täschner, C.; Erni, R.; Ummethala, R.; Rümmeli, M. H.; Schultz, L.; Rellinghaus, B. Silicon carbide embedded in carbon nanofibres: Structure and band gap determination. Phys. Chem. Chem. Phys. 2014, 16, 24437–24442.
DOI Google Scholar
4

Lin, L. W. Synthesis and optical property of large-scale centimetres-long silicon carbide nanowires by catalyst-free CVD route under superatmospheric pressure conditions. Nanoscale 2011, 3, 1582–1591.
DOI Google Scholar
5

Wang, Y. T.; Liu, Y.; Wendler, E.; Hübner, R.; Anwand, W.; Wang, G.; Chen, X. L.; Tong, W.; Yang, Z. R.; Munnik, F. et al. Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism. Phys. Rev. B 2015, 92, 174409.
DOI Google Scholar
6

Xie, S.; Guo, X. N.; Jin, G. Q.; Tong, X. L.; Wang, Y. Y.; Guo, X. Y. In situ grafted carbon on sawtooth-like SiC supported Ni for high-performance supercapacitor electrodes. Chem. Commun. 2014, 50, 228–230.
DOI Google Scholar
7

Chen, K.; Huang, Z. H.; Huang, J. T.; Fang, M. H.; Liu, Y. G.; Ji, H. P.; Yin, L. Synthesis of SiC nanowires by thermal evaporation method without catalyst assistant. Ceram. Int. 2013, 39, 1957–1962.
DOI Google Scholar
8

Tabata, A.; Imori, Y. Current density–voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/ crystalline Si heterojunction diodes prepared with varying H2 gas flow rates. Solid-State Electron. 2015, 104, 33–38.
DOI Google Scholar
9

Wang, B.; Wang, Y. D.; Lei, Y. P.; Wu, N.; Gou, Y. Z.; Han, C.; Xie, S.; Fang, D. Mesoporous silicon carbide nanofibers with in situ embedded carbon for co-catalyst free photocatalytic hydrogen production. Nano Res. 2016, 9, 886–898.
DOI Google Scholar
10

Wu, R. B.; Zhou, K.; Yang, Z. H.; Qian, X. K.; Wei, J.; Liu, L.; Huang, Y. Z.; Kong, L. B.; Wang, L. Y. Moltensalt- mediated synthesis of SiC nanowires for microwave absorption applications. CrystEngComm 2013, 15, 570–576.
DOI Google Scholar
11

Wu, R. B.; Zhou, K.; Qian, X. K.; Wei, J.; Tao, Y.; Sow, C. H.; Wang, L. Y.; Huang, Y. Z. Well-aligned SiC nanoneedle arrays for excellent field emitters. Mater. Lett. 2013, 91, 220–223.
DOI Google Scholar
12

Wu, R. B.; Zhou, K.; Wei, J.; Huang, Y. Z.; Su, F.; Chen, J. J.; Wang, L. Y. Growth of tapered SiC nanowires on flexible carbon fabric: toward field emission applications. J. Phys. Chem. C 2012, 116, 12940–12945.
DOI Google Scholar
13

Botsoa, J.; Lysenko, V.; Géloën, A.; Marty, O.; Bluet, J. M.; Guillot, G. Application of 3C-SiC quantum dots for living cell imaging. Appl. Phys. Lett. 2008, 92, 173902.
DOI Google Scholar
14

Wang, Z. J.; Wei, M. M.; Jin, L.; Ning, Y. X.; Yu, L.; Fu, Q.; Bao, X. H. Simultaneous N-intercalation and N-doping of epitaxial graphene on 6H-SiC(0001) through thermal reactions with ammonia. Nano Res. 2013, 6, 399–408.
DOI Google Scholar
15

Li, Z. J.; Zhao, J.; Zhang, M.; Xia, J. Y.; Meng, A. SiC nanowires with thickness-controlled SiO2 shells: Fabrication, mechanism, reaction kinetics and photoluminescence properties. Nano Res. 2014, 7, 462–472.
DOI Google Scholar
16

Ortiz, A. L.; Sánchez-Bajo, F.; Cumbrera, F. L.; Guiberteau, F. The prolific polytypism of silicon carbide. J. Appl. Cryst. 2013, 46, 242–247.
DOI Google Scholar
17

Zywietz, A.; Karch, K.; Bechstedt, F. Influence of polytypism on thermal properties of silicon carbide. Phys. Rev. B, 1996, 54, 1791–1798.
DOI Google Scholar
18

Krishna, P.; Verma, A. R. Crystal-polymorphism in one dimension. Phys. Status Solidi (B), 1966, 17, 437–477.
DOI Google Scholar
19

Hofmann, M.; Zywietz, A.; Karch, K.; Bechstedt, F. Lattice dynamics of SiC polytypes within the bond-charge model. Phys. Rev. B 1994, 50, 13401–13411.
DOI Google Scholar
20

Maboudian, R.; Carraro, C.; Senesky, D. G.; Roper, C. S. Advances in silicon carbide science and technology at the micro- and nanoscales. J. Vac. Sci. Technol. A 2013, 31, 050805.
DOI Google Scholar
21

Persson, C.; Lindefelt, U. Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap. Phys. Rev. B 1996, 54, 10257–10260.
DOI Google Scholar
22

Okojie, R. S.; Xhang, M.; Pirouz, P.; Tumakha, S.; Jessen, G.; Brillson, L. J. Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation. Appl. Phys. Lett. 2001, 79, 3056–3058.
DOI Google Scholar
23

Durandurdu, M. Pressure-induced phase transition of SiC. J. Phys. -Condes. Matter 2004, 16, 4411–4417.
DOI Google Scholar
24

Hong, M. H.; Samant, A. V.; Pirouz, P. Stacking fault energy of 6H-SiC and 4H-SiC single crystals. Philos. Mag. A 2009, 80, 919–935.
DOI Google Scholar
25

Sugiyama, S.; Togaya, M. Phase relationship between 3C- and 6H-silicon carbide at high pressure and high temperature. J. Am. Ceram. Soc. 2001, 84, 3013–3016.
DOI Google Scholar
26

Okojie, R. S.; Holzheu, T.; Huang, X. R.; Dudley, M. X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates. Appl. Phys. Lett. 2003, 83, 1971–1973.
DOI Google Scholar
27

Guo, X. X.; Dai, D. J.; Fan, B. L.; Fan, J. Y. Experimental evidence of α → β phase transformation in SiC quantum dots and their size-dependent luminescence. Appl. Phys. Lett. 2014, 105, 193110.
DOI Google Scholar
28

Li, P., Xu, L. Q.; Qian, Y. T. Selective synthesis of 3C-SiC hollow nanospheres and nanowires. Cryst. Growth Des. 2008, 8, 2431–2436.
DOI Google Scholar
29

Dasog, M.; Smith, L. F.; Purkait, T. K.; Veinot, J. G. C. Low temperature synthesis of silicon carbide nanomaterials using a solid-state method. Chem. Commun. 2013, 49, 7004–7006.
DOI Google Scholar
30

Fan, J. Y.; Li, H. X.; Wang, J.; Xiao, M. Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC. Appl. Phys. Lett. 2012, 101, 131906.
DOI Google Scholar
31

Yushin, G. N.; Cambaz, Z. G.; Gogotsi, Y.; Vyshnyakova, K. L.; Pereselentseva, L. N. Carbothermal synthesis of α-SiC micro-ribbons. J. Am. Ceram. Soc. 2007, 91, 83–87.
DOI Google Scholar
32

Bechelany, M.; Brioude, A.; Stadelmann, P.; Ferro, G.; Cornu, D.; Miele, P. Very long SiC-based coaxial nanocables with tunable chemical composition. Adv. Funct. Mater. 2007, 17, 3251–3257.
DOI Google Scholar
33

Dong, X. L.; Zhang, Z. D.; Zhao, X. G.; Chuang, Y. C. The preparation and characterization of ultrafine Fe-Ni particles. J. Mater. Res. 1999, 14, 398–406.
DOI Google Scholar
34

Zhang, X. F.; Guo, J. J.; Guan, P. F.; Liu, C. J.; Huang, H.; Xue, F. H.; Dong, X. L.; Pennycook, S. J.; Chisholm, M. F. Catalytically active single-atom niobium in graphitic layers. Nat. Commun. 2013, 4, 1924.
DOI Google Scholar
35

Yu, J. Y.; Gao, J.; Xue, F. H.; Yu, X. H.; Yu, H. T.; Dong, X. L.; Huang, H.; Ding, A.; Quan, X.; Cao, G. Z. Formation mechanism and optical characterization of polymorphic silicon nanostructures by DC arc-discharge. RSC Adv. 2015, 5, 68714–68721.
DOI Google Scholar
36

Gao, J.; Yu, J. Y.; Zhou, L.; Muhammad, J.; Dong, X. L.; Wang, Y. N.; Yu, H. T.; Quan, X.; Li, S. J.; Jung, Y. Interface evolution in the platelet-like SiC@C and SiC@SiO2 monocrystal nanocapsules. Nano Res. 2017, 10, 2644–2656.
DOI Google Scholar
37

Zhou, X. F.; Li, X.; Gao, Q. Z.; Yuan, J. L.; Wen, J. Q.; Fang, Y. P.; Liu, W.; Zhang, S. S.; Liu, Y. J. Metal-free carbon nanotube–SiC nanowire heterostructures with enhanced photocatalytic H2 evolution under visible light irradiation. Catal. Sci. Technol. 2015, 5, 2798–2806.
DOI Google Scholar
38

Kondo, T.; Okada, N.; Yamaguchi, Y.; Urai, J.; Aikawa, T.; Yuasa, M. Boron-doped nanodiamond powder prepared by solid-state diffusion method. Chem. Lett. 2015, 44, 627–629.
DOI Google Scholar
39

Ferrari, A. C.; Basko, D. M. Raman spectroscopy as a versatile tool for studying the properties of graphene. Nat. Nanotechnol. 2013, 8, 235–246.
DOI Google Scholar
40

Nichols, J. A.; Saito, H.; Deck, C.; Bandaru, P. R. Artificial introduction of defects into vertically aligned multiwalled carbon nanotube ensembles: Application to electrochemical sensors. J. Appl. Phys. 2007, 102, 064306.
DOI Google Scholar
41

Vallerot, J. M.; Bourrat, X.; Mouchon, A.; Chollon, G. Quantitative structural and textural assessment of laminar pyrocarbons through Raman spectroscopy, electron diffraction and few other techniques. Carbon 2006, 44, 1833–1844.
DOI Google Scholar
42

Smovzh, D. V.; Kostogrud, I. A.; Sakhapov, S. Z.; Zaikovskii, A. V.; Novopashin, S. A. The synthesis of few-layered graphene by the arc discharge sputtering of a Si-C electrode. Carbon 2017, 112, 97–102.
DOI Google Scholar
43

Ke, W. W.; Feng, X.; Huang, Y. D. The effect of Si-nanocrystal size distribution on Raman spectrum. J. Appl. Phys. 2011, 109, 083526.
DOI Google Scholar
44

Bechelany, M.; Brioude, A.; Cornu, D.; Ferro, G.; Miele, P. A Raman spectroscopy study of individual SiC nanowires. Adv. Funct. Mater. 2007, 17, 939–943.
DOI Google Scholar
45

Rehman, N. U.; Khan, F. U.; Khattak, N. A. D.; Zakaullah, M. Effect of neon mixing on vibrational temperature of molecular nitrogen plasma generated at 13.56 MHz. Phys. Lett. A 2008, 372, 1462–1468.
DOI Google Scholar
46

Cao, T. F.; Zhang, H. B.; Yan, B. H.; Lu, W.; Cheng, Y. Optical emission spectroscopy diagnostic and thermodynamic analysis of thermal plasma enhanced nanocrystalline silicon CVD process. RSC Adv. 2014, 4, 15131–15137.
DOI Google Scholar
47

Iordanova, S.; Koleva, I. Optical emission spectroscopy diagnostics of inductively-driven plasmas in argon gas at low pressures. Spectroc. Acta Pt. B-Atom. Spectr. 2007, 62, 344–356.
DOI Google Scholar
48

Sugimoto, I.; Nakano, S.; Kuwano, H. Enhanced saturation of sputtered amorphous SiN film frameworks using He- and Ne-Penning effects. J. Appl. Phys. 1994, 75, 7710–7717.
DOI Google Scholar
49

Naveed, M. A.; Qayyum, A.; Ali, S.; Zakaullah, M. Effects of helium gas mixing on the production of active species in nitrogen plasma. Phys. Lett. A 2006, 359, 499–503.
DOI Google Scholar
50

Aragón, C.; Aguilera, J. A. Characterization of laser induced plasmas by optical emission spectroscopy: A review of experiments and methods. Spectroc. Acta Pt. B-Atom. Spectr. 2008, 63, 893–916.
DOI Google Scholar
51

Qayyum, A.; Zeb, S.; Naveed, M. A.; Rehman, N. U.; Ghauri, S. A.; Zakaullah, M. Optical emission spectroscopy of Ar–N2 mixture plasma. J. Quant. Spectrosc. Radiat. Transf. 2007, 107, 361–371.
DOI Google Scholar
52

Tendero, C.; Tixier, C.; Tristant, P.; Desmaison, J.; Leprince, P. Atmospheric pressure plasmas: A review. Spectroc. Acta Pt. B-Atom. Spectr. 2006, 61, 2–30.
DOI Google Scholar
53

Logothetidis, S. Optical and electronic properties of amorphous carbon materials. Diam. Relat. Mat. 2003, 12, 141–150.
DOI Google Scholar
54

Dovbeshko, G. I.; Romanyuk, V. R.; Pidgirnyi, D. V.; Cherepanov, V. V.; Andreev, E. O.; Levin, V. M.; Kuzhir, P. P.; Kaplas, T.; Svirko, Y. P. Optical properties of pyrolytic carbon films versus graphite and graphene. Nanoscale Res. Lett. 2015, 10, 234.
DOI Google Scholar
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Publication history
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Acknowledgements

Publication history

Received: 04 May 2017
Revised: 25 June 2017
Accepted: 11 July 2017
Published: 02 February 2018
Issue date: March 2018

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© Tsinghua University Press and Springer-Verlag GmbH Germany 2017

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundations of China (Nos. 51331006 and 51271044).

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