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Nano Research 2018, 11(3): 1399-1414 https://doi.org/10.1007/s12274-017-1755-4
Research Article | Issue | Published: 02 February 2018

Effects of dielectric stoichiometry on the photoluminescence properties of encapsulated WSe2 monolayers

Show Author's Information Javier Martín-Sánchez1( ),  Antonio Mariscal2,  Marta De Luca3,  Aitana Tarazaga Martín-Luengo1,  Georg Gramse4,  Alma Halilovic1,  Rosalía Serna2,  Alberta Bonanni1,  Ilaria Zardo3,  Rinaldo Trotta1( ),  Armando Rastelli1
Institute of Semiconductor and Solid State PhysicsJohannes Kepler University LinzAltenbergerstrasse 69, A-4040, LinzAustria
Laser Processing GroupInstituto de ópticaCSICC/Serrano 12128006Madrid, Spain
Department of PhysicsUniversity of BaselKlingelbergstrasse 824056Basel, Switzerland
Institute for BiophysicsJohannes Kepler University LinzGruberstrasse 40, A-4020, LinzAustria
Keywords:
photoluminescence, semiconductors, transition metal dichalcogenides, two dimensional (2D) materials, dielectric encapsulation, WSe2
Cite this article:
Martín-Sánchez J, Mariscal A, Luca MD, et al. Effects of dielectric stoichiometry on the photoluminescence properties of encapsulated WSe2 monolayers. Nano Research, 2018, 11(3): 1399-1414. https://doi.org/10.1007/s12274-017-1755-4
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Abstract Full text Electronic supplementary material About this article

Two-dimensional transition metal dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact footprints. However, the high sensitivity of atomically thin materials to the surrounding dielectric media imposes severe limitations on their practical applicability. Hence, to enable the effective integration of these materials in devices, the development of reliable encapsulation procedures that preserve their physical properties is required. Here, the excitonic photoluminescence (at room temperature and 10 K) is assessed on mechanically exfoliated WSe2 monolayer flakes encapsulated with SiOx and AlxOy layers by means of chemical and physical deposition techniques. Conformal coating on untreated and non-functionalized flakes is successfully achieved by all the techniques examined, with the exception of atomic layer deposition, for which a cluster-like oxide coating is formed. No significant compositional or strain state changes in the flakes are detected upon encapsulation, independently of the technique adopted. Remarkably, our results show that the optical emission of the flakes is strongly influenced by the stoichiometry quality of the encapsulating oxide. When the encapsulation is carried out with slightly sub-stoichiometric oxides, two remarkable phenomena are observed. First, dominant trion (charged exciton) photoluminescence is detected at room temperature, revealing a clear electrical doping of the monolayers. Second, a strong decrease in the optical emission of the monolayers is observed, and attributed to non-radiative recombination processes and/or carrier transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation, opening a promising route for the development of integrated two-dimensional devices.


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Electronic supplementary material
About this article

Effects of dielectric stoichiometry on the photoluminescence properties of encapsulated WSe2 monolayers

Show Author's information Javier Martín-Sánchez1( ), Antonio Mariscal2, Marta De Luca3, Aitana Tarazaga Martín-Luengo1, Georg Gramse4, Alma Halilovic1, Rosalía Serna2, Alberta Bonanni1, Ilaria Zardo3, Rinaldo Trotta1( ), Armando Rastelli1
Institute of Semiconductor and Solid State PhysicsJohannes Kepler University LinzAltenbergerstrasse 69, A-4040, LinzAustria
Laser Processing GroupInstituto de ópticaCSICC/Serrano 12128006Madrid, Spain
Department of PhysicsUniversity of BaselKlingelbergstrasse 824056Basel, Switzerland
Institute for BiophysicsJohannes Kepler University LinzGruberstrasse 40, A-4020, LinzAustria

Abstract

Two-dimensional transition metal dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact footprints. However, the high sensitivity of atomically thin materials to the surrounding dielectric media imposes severe limitations on their practical applicability. Hence, to enable the effective integration of these materials in devices, the development of reliable encapsulation procedures that preserve their physical properties is required. Here, the excitonic photoluminescence (at room temperature and 10 K) is assessed on mechanically exfoliated WSe2 monolayer flakes encapsulated with SiOx and AlxOy layers by means of chemical and physical deposition techniques. Conformal coating on untreated and non-functionalized flakes is successfully achieved by all the techniques examined, with the exception of atomic layer deposition, for which a cluster-like oxide coating is formed. No significant compositional or strain state changes in the flakes are detected upon encapsulation, independently of the technique adopted. Remarkably, our results show that the optical emission of the flakes is strongly influenced by the stoichiometry quality of the encapsulating oxide. When the encapsulation is carried out with slightly sub-stoichiometric oxides, two remarkable phenomena are observed. First, dominant trion (charged exciton) photoluminescence is detected at room temperature, revealing a clear electrical doping of the monolayers. Second, a strong decrease in the optical emission of the monolayers is observed, and attributed to non-radiative recombination processes and/or carrier transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation, opening a promising route for the development of integrated two-dimensional devices.

Keywords: photoluminescence, semiconductors, transition metal dichalcogenides, two dimensional (2D) materials, dielectric encapsulation, WSe2

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Publication history
Copyright
Acknowledgements

Publication history

Received: 26 April 2017
Revised: 25 June 2017
Accepted: 03 July 2017
Published: 02 February 2018
Issue date: March 2018

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany 2017

Acknowledgements

Acknowledgements

The authors would like to thank Georgios Katsaros and Tim Wehling for valuable discussions. Stephan Bräuer, Albin Schwarz, and Ursula Kainz are acknowledged for technical support. A. M. acknowledges the financial support through BES-2013-062593. G. G. acknowledges support from the Austrian Science Fund through project P 28018-B27. I. Z. acknowledges financial support from the Swiss National Science Foundation research grant (No. 200021_165784). This work was partially funded by the Austrian Science Fund through the projects P24471 and P26830, and by the Spanish Ministry for Economy and Competitiveness trough the project MINECO/FEDER TEC2015-69916-C2-1-R.

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