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Nano Research 2018, 11(3): 1227-1237 https://doi.org/10.1007/s12274-017-1735-8
Research Article | Issue | Published: 02 February 2018

High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks

Show Author's Information Hongchao Zhang1,  You Meng1,  Longfei Song1,  Linqu Luo1,  Yuanbin Qin2,  Ning Han3,  Zaixing Yang4,  Lei Liu1,  Johnny C. Ho5,6,7( ),  Fengyun Wang1( )
College of Physics and Cultivation Base for State Key LaboratoryQingdao UniversityQingdao266071China
Center for Advancing Materials Performance from the NanoscaleState Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
State Key Laboratory of Multiphase Complex SystemsInstitute of Process EngineeringChinese Academy of SciencesBeijing100190China
School of Microelectronics and Center of NanoelectronicsShandong UniversityJinan250100China
Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, KowloonHong KongChina
State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, KowloonHong KongChina
Shenzhen Research InstituteCity University of Hong KongShenzhen518057China
Keywords:
doping, In2O3 nanofiber, transistor, threshold voltage, enhancement mode
Cite this article:
Zhang H, Meng Y, Song L, et al. High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks. Nano Research, 2018, 11(3): 1227-1237. https://doi.org/10.1007/s12274-017-1735-8
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Abstract Full text Electronic supplementary material About this article

Although In2O3 nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on–off current ratios (Ion/Ioff), and large, negative threshold voltages (VTH), leading to poor device performance, parasitic energy consumption, and rather complicated circuit design. Here, instead of the conventional surface modification of In2O3 NFs, we present a one-step electrospinning process (i.e., without hot-press) to obtain controllable Mg-doped In2O3 NF networks to achieve high-performance enhancement-mode thin-film transistors (TFTs). By simply adjusting the Mg doping concentration, the device performance can be manipulated precisely. For the optimal doping concentration of 2 mol%, the devices exhibit a small VTH (3.2 V), high saturation current (1.1 × 10–4 A), large on/off current ratio (> 108), and respectable peak carrier mobility (2.04 cm2/(V·s)), corresponding to one of the best device performances among all 1D metal-oxide NFs based devices reported so far. When high-κ HfOx thin films are employed as the gate dielectric, their electron mobility and VTH can be further improved to 5.30 cm2/(V·s) and 0.9 V, respectively, which demonstrates the promising prospect of these Mg-doped In2O3 NF networks for highperformance, large-scale, and low-power electronics.


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Electronic supplementary material
About this article

High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks

Show Author's information Hongchao Zhang1, You Meng1, Longfei Song1, Linqu Luo1, Yuanbin Qin2, Ning Han3, Zaixing Yang4, Lei Liu1, Johnny C. Ho5,6,7( ), Fengyun Wang1( )
College of Physics and Cultivation Base for State Key LaboratoryQingdao UniversityQingdao266071China
Center for Advancing Materials Performance from the NanoscaleState Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
State Key Laboratory of Multiphase Complex SystemsInstitute of Process EngineeringChinese Academy of SciencesBeijing100190China
School of Microelectronics and Center of NanoelectronicsShandong UniversityJinan250100China
Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, KowloonHong KongChina
State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, KowloonHong KongChina
Shenzhen Research InstituteCity University of Hong KongShenzhen518057China

Abstract

Although In2O3 nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on–off current ratios (Ion/Ioff), and large, negative threshold voltages (VTH), leading to poor device performance, parasitic energy consumption, and rather complicated circuit design. Here, instead of the conventional surface modification of In2O3 NFs, we present a one-step electrospinning process (i.e., without hot-press) to obtain controllable Mg-doped In2O3 NF networks to achieve high-performance enhancement-mode thin-film transistors (TFTs). By simply adjusting the Mg doping concentration, the device performance can be manipulated precisely. For the optimal doping concentration of 2 mol%, the devices exhibit a small VTH (3.2 V), high saturation current (1.1 × 10–4 A), large on/off current ratio (> 108), and respectable peak carrier mobility (2.04 cm2/(V·s)), corresponding to one of the best device performances among all 1D metal-oxide NFs based devices reported so far. When high-κ HfOx thin films are employed as the gate dielectric, their electron mobility and VTH can be further improved to 5.30 cm2/(V·s) and 0.9 V, respectively, which demonstrates the promising prospect of these Mg-doped In2O3 NF networks for highperformance, large-scale, and low-power electronics.

Keywords: doping, In2O3 nanofiber, transistor, threshold voltage, enhancement mode

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Publication history
Copyright
Acknowledgements

Publication history

Received: 11 May 2017
Revised: 15 June 2017
Accepted: 18 June 2017
Published: 02 February 2018
Issue date: March 2018

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany 2017

Acknowledgements

Acknowledgements

The work was financially supported by the National Natural Science Foundation of China (Nos. 51402160, 51302154, and 51672229), the General Research Fund of the Research Grants Council of Hong Kong, China (No. CityU 11275916), the Natural Science Foundation of Shandong Province, China (No. ZR2014EMQ011), the Taishan Scholar Program of Shandong Province, China, the Science Technology, and Innovation Committee of Shenzhen Municipality (No. JCYJ20160229165240684), and was supported by a grant from the Shenzhen Research Institute, City University of Hong Kong. The work was also supported by National Demonstration Center for Experimental Applied Physics Education (Qingdao University).

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