High-mobility air-stable n-type field-effect transistors based on large-area solution-processed organic single-crystal arrays
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Solution-processed n-type organic semiconductor micro/nanocrystals (OSMCs) are fundamental elements for developing low-cost, large-area, and all organic logic/complementary circuits. However, the development of air-stable, highly aligned n-channel OSMC arrays for realizing high-performance devices lags far behind their p-channel counterparts. Herein, we present a simple one-step slope-coating method for the large-scale, solution-processed fabrication of highly aligned, air-stable, n-channel ribbon-shaped single-crystalline N, N′-bis(2-phenylethyl)-perylene-3, 4:9, 10-tetracarboxylic diimide (BPE-PTCDI) arrays. The slope and patterned photoresist (PR) stripes on the substrate are found to be crucial for the formation of large-area submicron ribbon arrays. The width and thickness of the BPE-PTCDI submicron ribbons can be finely tuned by controlling the solution concentration as well as the slope angle. The resulting BPE-PTCDI submicron ribbon arrays possess an optimum electron mobility up to 2.67 cm2·V–1·s–1 (with an average mobility of 1.13 cm2·V–1·s–1), which is remarkably higher than that of thin film counterparts and better than the performance reported previously for single-crystalline BPE-PTCDI-based devices. Moreover, the devices exhibit robust air stability and remain stable after exposing in air over 50 days. Our study facilitates the development of air-stable, n-channel organic field-effect transistors (OFETs) and paves the way towards the fabrication of high-performance, organic single crystal-based integrated circuits.
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High-mobility air-stable n-type field-effect transistors based on large-area solution-processed organic single-crystal arrays
),
Abstract
Solution-processed n-type organic semiconductor micro/nanocrystals (OSMCs) are fundamental elements for developing low-cost, large-area, and all organic logic/complementary circuits. However, the development of air-stable, highly aligned n-channel OSMC arrays for realizing high-performance devices lags far behind their p-channel counterparts. Herein, we present a simple one-step slope-coating method for the large-scale, solution-processed fabrication of highly aligned, air-stable, n-channel ribbon-shaped single-crystalline N, N′-bis(2-phenylethyl)-perylene-3, 4:9, 10-tetracarboxylic diimide (BPE-PTCDI) arrays. The slope and patterned photoresist (PR) stripes on the substrate are found to be crucial for the formation of large-area submicron ribbon arrays. The width and thickness of the BPE-PTCDI submicron ribbons can be finely tuned by controlling the solution concentration as well as the slope angle. The resulting BPE-PTCDI submicron ribbon arrays possess an optimum electron mobility up to 2.67 cm2·V–1·s–1 (with an average mobility of 1.13 cm2·V–1·s–1), which is remarkably higher than that of thin film counterparts and better than the performance reported previously for single-crystalline BPE-PTCDI-based devices. Moreover, the devices exhibit robust air stability and remain stable after exposing in air over 50 days. Our study facilitates the development of air-stable, n-channel organic field-effect transistors (OFETs) and paves the way towards the fabrication of high-performance, organic single crystal-based integrated circuits.
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Acknowledgements
This work was supported by the National Basic Research Program of China (Nos. 2012CB932400 and 2016YFA0202400), the National Natural Science Foundation of China (Nos. 61422403, 51672180, 51622306, and 21673151), Qing Lan Project, 111 project, Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC), and the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD).
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