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Nano Research 2018, 11(2): 707-721 https://doi.org/10.1007/s12274-017-1680-6
Research Article | Issue | Published: 19 July 2017

Three-layer phosphorene-metal interfaces

Show Author's Information Xiuying Zhang1,§,  Yuanyuan Pan1,§,  Meng Ye1,  Ruge Quhe2,  Yangyang Wang1,3,  Ying Guo4,  Han Zhang1,  Yang Dan1,  Zhigang Song1,  Jingzhen Li1,  Jinbo Yang1,5,  Wanlin Guo6,  Jing Lu1,5( )
State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871China
State Key Laboratory of Information Photonics and Optical Communications and School of ScienceBeijing University of Posts and TelecommunicationsBeijing100876China
Nanophotonics and Optoelectronics Research CenterQian Xuesen Laboratory of Space TechnologyChina Academy of Space TechnologyBeijing100094China
School of Physics and Telecommunication EngineeringShaanxi Sci-Tech UniversityHanzhong723001China
Collaborative Innovation Center of Quantum MatterBeijing100871China
Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationNanjing University of Aeronautics and AstronauticsNanjing210016China

§ Xiuying Zhang and Yuanyuan Pan contributed equally to this work.

Keywords:
density functional theory, Schottky barrier height, three-layer phosphorene, interfacial properties, quantum transport simulation
Cite this article:
Zhang X, Pan Y, Ye M, et al. Three-layer phosphorene-metal interfaces. Nano Research, 2018, 11(2): 707-721. https://doi.org/10.1007/s12274-017-1680-6
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Abstract Full text About this article

Phosphorene has attracted much attention recently as an alternative channel material in nanoscale electronic and optoelectronic devices due to its high carrier mobility and tunable direct bandgap. Compared with monolayer (ML) phosphorene, few-layer (FL) phosphorene is easier to prepare, is more stable in experiments, and is expected to form a smaller Schottky barrier height (SBH) at the phosphorene-metal interface. Using ab initio electronic structure calculations and quantum transport simulations, we perform a systematic study of the interfacial properties of three-layer (3L) phosphorene field effect transistors (FETs) contacted with several common metals (Al, Ag, Au, Cu, Ti, Cr, Ni, and Pd) for the first time. The SBHs obtained in the vertical direction from projecting the band structures of the 3L phosphorene-metal systems to the left bilayer (2L) phosphorenes are comparable with those obtained in the lateral direction from the quantum transport simulations for 2L phosphorene FETs. The quantum transport simulations for the 3L phosphorene FETs show that 3L phosphorene forms n-type Schottky contacts with electron SBHs of 0.16 and 0.28 eV in the lateral direction, when Ag and Cu are used as electrodes, respectively, and p-type Schottky contacts with hole SBHs of 0.05, 0.11, 0.20, 0.30, 0.30, and 0.31 eV in the lateral direction when Cr, Pd, Ni, Ti, Al, and Au are used as electrodes, respectively. The calculated polarity and SBHs of the 3L phosphorene FETs are generally in agreement with the available experiments.


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About this article

Three-layer phosphorene-metal interfaces

Show Author's information Xiuying Zhang1,§, Yuanyuan Pan1,§, Meng Ye1, Ruge Quhe2, Yangyang Wang1,3, Ying Guo4, Han Zhang1, Yang Dan1, Zhigang Song1, Jingzhen Li1, Jinbo Yang1,5, Wanlin Guo6, Jing Lu1,5( )
State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871China
State Key Laboratory of Information Photonics and Optical Communications and School of ScienceBeijing University of Posts and TelecommunicationsBeijing100876China
Nanophotonics and Optoelectronics Research CenterQian Xuesen Laboratory of Space TechnologyChina Academy of Space TechnologyBeijing100094China
School of Physics and Telecommunication EngineeringShaanxi Sci-Tech UniversityHanzhong723001China
Collaborative Innovation Center of Quantum MatterBeijing100871China
Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationNanjing University of Aeronautics and AstronauticsNanjing210016China

§ Xiuying Zhang and Yuanyuan Pan contributed equally to this work.

Abstract

Phosphorene has attracted much attention recently as an alternative channel material in nanoscale electronic and optoelectronic devices due to its high carrier mobility and tunable direct bandgap. Compared with monolayer (ML) phosphorene, few-layer (FL) phosphorene is easier to prepare, is more stable in experiments, and is expected to form a smaller Schottky barrier height (SBH) at the phosphorene-metal interface. Using ab initio electronic structure calculations and quantum transport simulations, we perform a systematic study of the interfacial properties of three-layer (3L) phosphorene field effect transistors (FETs) contacted with several common metals (Al, Ag, Au, Cu, Ti, Cr, Ni, and Pd) for the first time. The SBHs obtained in the vertical direction from projecting the band structures of the 3L phosphorene-metal systems to the left bilayer (2L) phosphorenes are comparable with those obtained in the lateral direction from the quantum transport simulations for 2L phosphorene FETs. The quantum transport simulations for the 3L phosphorene FETs show that 3L phosphorene forms n-type Schottky contacts with electron SBHs of 0.16 and 0.28 eV in the lateral direction, when Ag and Cu are used as electrodes, respectively, and p-type Schottky contacts with hole SBHs of 0.05, 0.11, 0.20, 0.30, 0.30, and 0.31 eV in the lateral direction when Cr, Pd, Ni, Ti, Al, and Au are used as electrodes, respectively. The calculated polarity and SBHs of the 3L phosphorene FETs are generally in agreement with the available experiments.

Keywords: density functional theory, Schottky barrier height, three-layer phosphorene, interfacial properties, quantum transport simulation

References(65)

1

Li, L. K.; Yu, Y. J.; Ye, G. J.; Ge, Q. Q.; Ou, X. D.; Wu, H.; Feng, D. L.; Chen, X. H.; Zhang, Y. B. Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372-377.
DOI Google Scholar
2

Das, S.; Zhang, W.; Demarteau, M.; Hoffmann, A.; Dubey, M.; Roelofs, A. Tunable transport gap in phosphorene. Nano Lett. 2014, 14, 5733-5739.
DOI Google Scholar
3

Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X. F.; Tománek, D.; Ye, P. D. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 2014, 8, 4033-4041.
DOI Google Scholar
4

Das, S.; Demarteau, M.; Roelofs, A. Ambipolar phosphorene field effect transistor. ACS Nano 2014, 8, 11730-11738.
DOI Google Scholar
5

Reich, E. S. Phosphorene excites materials scientists. Nature 2014, 506, 19.
DOI Google Scholar
6

Buscema, M.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; van der Zant, H. S. J.; Castellanos-Gomez, A. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 2014, 14, 3347-3352.
DOI Google Scholar
7

Zhang, S.; Yang, J.; Xu, R. J.; Wang, F.; Li, W. F.; Ghufran, M.; Zhang, Y. W.; Yu, Z. F.; Zhang, G.; Qin, Q. H. et al. Extraordinary photoluminescence and strong temperature/angle-dependent Raman responses in few-layer phosphorene. ACS Nano 2014, 8, 9590-9596.
DOI Google Scholar
8

Churchill, H. O.; Jarillo-Herrero, P. Two-dimensional crystals: Phosphorus joins the family. Nat. Nanotechnol. 2014, 9, 330-331.
DOI Google Scholar
9

Koenig, S. P.; Doganov, R. A.; Schmidt, H.; Castro Neto, A. H.; Özyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 2014, 104, 103106.
DOI Google Scholar
10

Wan, R. L.; Cao, X.; Guo, J. Simulation of phosphorene Schottky-barrier transistors. Appl. Phys. Lett. 2014, 105, 163511.
DOI Google Scholar
11

Allain, A.; Kang, J. H.; Banerjee, K.; Kis, A. Electrical contacts to two-dimensional semiconductors. Nat. Mater. 2015, 14, 1195-1205.
DOI Google Scholar
12

Liu, H.; Du, Y. C.; Deng, Y. X.; Ye, P. D. Semiconducting black phosphorus: Synthesis, transport properties and electronic applications. Chem. Soc. Rev. 2015, 44, 2732-2743.
DOI Google Scholar
13

Kang, J. H.; Liu, W.; Sarkar, D.; Jena, D.; Banerjee, K. Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors. Phys. Rev. X 2014, 4, 031005.
DOI Google Scholar
14

Pan, Y. Y.; Wang, Y. Y.; Ye, M.; Quhe, R. G.; Zhong, H. X.; Song, Z. G.; Peng, X. Y.; Yu, D. P.; Yang, J. B.; Shi, J. J. et al. Monolayer phosphorene-metal contacts. Chem. Mater. 2016, 28, 2100-2109.
DOI Google Scholar
15

Zhong, H. X.; Quhe, R. G.; Wang, Y. Y.; Ni, Z. Y.; Ye, M.; Song, Z. G.; Pan, Y. Y.; Yang, J. B.; Yang, L.; Lei, M. et al. Interfacial properties of monolayer and bilayer MoS2 contacts with metals: Beyond the energy band calculations. Sci. Rep. 2016, 6, 21786.
DOI Google Scholar
16

Wang, Y. Y.; Yang, R. X.; Quhe, R. G.; Zhong, H. X.; Cong, L. X.; Ye, M.; Ni, Z. Y.; Song, Z. G.; Yang, J. B.; Shi, J. J. et al. Does p-type ohmic contact exist in WSe2-metal interfaces? Nanoscale 2016, 8, 1179-1191.
DOI Google Scholar
17

Du, Y. C.; Liu, H.; Deng, Y. X.; Ye, P. D. Device perspective for black phosphorus field-effect transistors: Contact resistance, ambipolar behavior, and scaling. ACS Nano 2014, 8, 10035-10042.
DOI Google Scholar
18

Perello, D. J.; Chae, S. H.; Song, S.; Lee, Y. H. High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering. Nat. Commun. 2015, 6, 7809.
DOI Google Scholar
19

Wang, H.; Wang, X. M.; Xia, F. N.; Wang, L. H.; Jiang, H.; Xia, Q. F.; Chin, M. L.; Dubey, M.; Han, S. J. Black phosphorus radio-frequency transistors. Nano Lett. 2014, 14, 6424-6429.
DOI Google Scholar
20

Wan, B. S.; Yang, B. C.; Wang, Y.; Zhang, J. Y.; Zeng, Z. M.; Liu, Z. Y.; Wang, W. H. Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation. Nanotechnol. 2015, 26, 435702.
DOI Google Scholar
21

Li, X. F.; Du, Y. C.; Si, M. W.; Yang, L. M.; Li, S. C.; Li, T. Y.; Xiong, X.; Ye, P. D.; Wu, Y. Q. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale 2016, 8, 3572-3578.
DOI Google Scholar
22

Buscema, M.; Groenendijk, D. J.; Steele, G. A.; van der Zant, H. S.; Castellanos-Gomez, A. Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating. Nat. Commun. 2014, 5, 4651.
DOI Google Scholar
23

Xia, F. N.; Wang, H.; Jia, Y. C. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 2014, 5, 4458.
DOI Google Scholar
24

Liu, H.; Neal, A. T.; Si, M. W.; Du, Y. C.; Ye, P. D. The effect of dielectric capping on few-layer phosphorene transistors: Tuning the Schottky barrier heights. IEEE Electr. Device Lett. 2014, 35, 795-797.
DOI Google Scholar
25

Xu, R. J.; Yang, J.; Zhu, Y.; Yan, H.; Pei, J. J.; Myint, Y. W.; Zhang, S.; Lu, Y. R. Layer-dependent surface potential of phosphorene and anisotropic/layer-dependent charge transfer in phosphorene-gold hybrid systems. Nanoscale 2015, 8, 129-135.
DOI Google Scholar
26

Gong, K.; Zhang, L.; Ji, W.; Guo, H. Electrical contacts to monolayer black phosphorus: A first-principles investigation. Phys. Rev. B 2014, 90, 125441.
DOI Google Scholar
27

Zhu, S. C.; Ni, Y.; Liu, J.; Yao, K. L. The study of interaction and charge transfer at black phosphorus-metal interfaces. J. Phys. D Appl. Phys. 2015, 48, 445101.
DOI Google Scholar
28

Pan, Y. Y.; Dan, Y.; Wang, Y. Y.; Ye, M.; Zhang, H.; Quhe, R. G.; Zhang, X. Y.; Li, J. Z.; Guo, W. L.; Yang, L. et al. Schottky barriers in bilayer phosphorene transistors. ACS Appl. Mater. Interfaces 2017, 9, 12694-12705.
DOI Google Scholar
29

Koenig, S. P.; Doganov, R. A.; Seixas, L.; Carvalho, A.; Tan, J. Y.; Watanabe, K.; Taniguchi, T.; Yakovlev, N.; Neto, A. H. C.; Ozyilmaz, B. Electron doping of ultrathin black phosphorus with Cu adatoms. Nano Lett. 2016, 16, 2145-2151.
DOI Google Scholar
30

Yuan, Y. K.; Quhe, R. G.; Zheng, J. X.; Wang, Y. Y.; Ni, Z. Y.; Shi, J. J.; Lu, J. Strong band hybridization between silicene and Ag(111) substrate. Physica E 2014, 58, 38-42.
DOI Google Scholar
31

Cheng, D. J.; Barcaro, G.; Charlier, J. C.; Hou, M.; Fortunelli, A. Homogeneous nucleation of graphitic nanostructures from carbon chains on Ni(111). J. Phy. Chem. C 2011, 115, 10537-10543.
DOI Google Scholar
32

So, C.; Zhang, H.; Wang, Y.; Ye, M.; Pan, Y.; Quhe, R.; Li, J. Z.; Zhang, X.; Zhou, Y.; Lu, J. A computational study of monolayer hexagonal WTe2 to metal interfaces. Phys. Status Solidi B 2017, in press, DOI: 10.1002/pssb.201600837.
DOI Google Scholar
33

Qiao, J. S.; Kong, X. H.; Hu, Z. X.; Yang, F.; Ji, W. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 2014, 5, 4475.
DOI Google Scholar
34

Kresse, G.; Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 1999, 59, 1758-1775.
DOI Google Scholar
35

Monkhorst, H. J.; Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 1976, 13, 5188-5192.
DOI Google Scholar
36

Kresse, G.; Hafner, J. Ab initio molecular dynamics for liquid metals. Phys. Rev. B 1993, 47, 558-561.
DOI Google Scholar
37

Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169-11186.
DOI Google Scholar
38

Klimeš, J.; Bowler, D. R.; Michaelides, A. Chemical accuracy for the van der Waals density functional. J. Phys. 2010, 22, 022201.
DOI Google Scholar
39

Segall, M. D.; Lindan, P. J. D.; Probert, M. J.; Pickard, C. J.; Hasnip, P. J.; Clark, S. J.; Payne, M. C. First-principles simulation: Ideas, illustrations and the CASTEP code. J. Phys. 2002, 14, 2717-2744.
DOI Google Scholar
40

Taylor, J.; Guo, H.; Wang, J. Ab initio modeling of quantum transport properties of molecular electronic devices. Phys. Rev. B 2001, 63, 245407.
DOI Google Scholar
41

Brandbyge, M.; Mozos, J. L.; Ordejón, P.; Taylor, J.; Stokbro, K. Density-functional method for nonequilibrium electron transport. Phys. Rev. B 2002, 65, 165401.
DOI Google Scholar
42

Çakır, D.; Peeters, F. M. Dependence of the electronic and transport properties of metal-MoSe2 interfaces on contact structures. Phys. Rev. B 2014, 89, 245403.
DOI Google Scholar
43

Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 77, 3865-3868.
DOI Google Scholar
44

Wang, Y. Y.; Huang, P.; Ye, M.; Quhe, R. G.; Pan, Y. Y.; Zhang, H.; Zhong, H. X.; Shi, J. J.; Lu, J. Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene. Chem. Mater. 2017, 29, 2191-2201.
DOI Google Scholar
45

Guo, Y.; Pan, F.; Ye, M.; Wang, Y. Y.; Pan, Y. Y.; Zhang, X. Y.; Li, J. Z.; Zhang, H.; Lu, J. Interfacial properties of stanene-metal contacts. 2D Mater. 2016, 3, 035020.
DOI Google Scholar
46

Zhong, H. X.; Quhe, R. G.; Wang, Y. Y.; Shi, J. J.; Lü, J. Silicene on substrates: A theoretical perspective. Chin. Phys. B 2015, 24, 087308.
DOI Google Scholar
47

Zhao, J. J.; Liu, H. S.; Yu, Z. M.; Quhe, R. G.; Zhou, S.; Wang, Y. Y.; Liu, C. C.; Zhong, H. X.; Han, N. N.; Lu, J. et al. Rise of silicene: A competitive 2D material. Prog. Mater. Sci. 2016, 83, 24-151.
DOI Google Scholar
48

Quhe, R. G.; Yuan, Y. K.; Zheng, J. X.; Wang, Y. Y.; Ni, Z. Y.; Shi, J. J.; Yu, D. P.; Yang, J. B.; Lu, J. Does the Dirac cone exist in silicene on metal substrates? Sci. Rep. 2014, 4, 5476.
DOI Google Scholar
49

Kang, J. H.; Liu, W.; Banerjee, K. High-performance MoS2 transistors with low-resistance molybdenum contacts. Appl. Phys. Lett. 2014, 104, 093106.
DOI Google Scholar
50

Ni, Z. Y.; Ye, M.; Ma, J. H.; Wang, Y. Y.; Quhe, R. G.; Zheng, J. X.; Dai, L.; Yu, D. P.; Shi, J. J.; Yang, J. B. et al. Performance upper limit of sub-10 nm monolayer MoS2 transistors. Adv. Electron. Mater. 2016, 2, 1600191.
DOI Google Scholar
51

Pan, Y. Y.; Wang, Y. Y.; Wang, L.; Zhong, H. X.; Quhe, R. G.; Ni, Z. Y.; Ye, M.; Mei, W. N.; Shi, J. J.; Guo, W. L. et al. Graphdiyne-metal contacts and graphdiyne transistors. Nanoscale 2015, 7, 2116-2127.
DOI Google Scholar
52

Pan, Y. Y.; Li, S. B.; Ye, M.; Quhe, R. G.; Song, Z. G.; Wang, Y. Y.; Zheng, J. X.; Pan, F.; Guo, W. L.; Yang, J. B. et al. Interfacial properties of monolayer MoSe2-metal contacts. J. Phys. Chem. C 2016, 120, 13063-13070.
DOI Google Scholar
53

Pyykkö, P.; Atsumi, M. Molecular single-bond covalent radii for elements 1-118. Chem. Eur. J. 2008, 15, 186-197.
DOI Google Scholar
54

Van Hoof, C.; Deneffe, K.; De Boeck, J.; Arent, D. J.; Borghs, G. Franz-Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion region. Appl. Phys. Lett. 1989, 54, 608-610.
DOI Google Scholar
55

Shen, H.; Dutta, M.; Fotiadis, L.; Newman, P. G.; Moerkirk, R. P.; Chang, W. H.; Sacks, R. N. Photoreflectance study of surface Fermi level in GaAs and GaAlAs. Appl. Phys. Lett. 1990, 57, 2118-2120.
DOI Google Scholar
56

Hwang, J. S.; Chang, C. C.; Chen, M. F.; Chen, C. C.; Lin, K. I.; Tang, F. C.; Hong, M.; Kwo, J. Schottky barrier height and interfacial state density on oxide-GaAs interface. J. Appl. Phys. 2003, 94, 348-353.
DOI Google Scholar
57

Cho, S.; Kim, S.; Kim, J. H.; Zhao, J.; Seok, J.; Keum, D. H.; Baik, J.; Choe, D. H.; Chang, K. J.; Suenaga, K. et al. Phase patterning for ohmic homojunction contact in MoTe2. Science 2015, 349, 625-628.
DOI Google Scholar
58

Kim, A. R.; Kim, Y.; Nam, J.; Chung, H. S.; Kim, D. J.; Kwon, J. D.; Park, S. W.; Park, J.; Choi, S. Y.; Lee, B. H. et al. Alloyed 2D metal-semiconductor atomic layer junctions. Nano Lett. 2016, 16, 1890-1895.
DOI Google Scholar
59

Kappera, R.; Voiry, D.; Yalcin, S. E.; Branch, B.; Gupta, G.; Mohite, A. D.; Chhowalla, M. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 2014, 13, 1128-1134.
DOI Google Scholar
60

Liu, Y. Y.; Stradins, P.; Wei, S. H. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier. Sci. Adv. 2016, 2, e1600069.
DOI Google Scholar
61

Padilha, J. E.; Fazzio, A.; da Silva, A. J. R. Van der Waals heterostructure of phosphorene and graphene: Tuning the Schottky barrier and doping by electrostatic gating. Phys. Rev. Lett. 2015, 114, 066803.
DOI Google Scholar
62

Avsar, A.; Vera-Marun, I. J.; Tan, J. Y.; Watanabe, K.; Taniguchi, T.; Neto, A. H. C.; Özyilmaz, B. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. ACS Nano 2015, 9, 4138-4145.
DOI Google Scholar
63

Hu, W.; Wang, T.; Yang, J. L. Tunable Schottky contacts in hybrid graphene-phosphorene nanocomposites. J. Mater. Chem. C 2015, 3, 4756-4761.
DOI Google Scholar
64

Liu, Y. Y.; Xiao, H.; Goddard Ⅲ, W. A. Schottky-barrier-free contacts with two-dimensional semiconductors by surface-engineered MXenes. J. Am. Chem. Soc. 2016, 138, 15853-15856.
DOI Google Scholar
65

Quhe, R. G.; Peng, X. Y.; Pan, Y. Y.; Ye, M.; Wang, Y. Y.; Zhang, H.; Feng, S. Y.; Zhang, Q. X.; Shi, J. J.; Yang, J. B. et al. Can a black phosphorus Schottky barrier transistor be good enough? ACS Appl. Mater. Interfaces 2017, 9, 3959-3966.
DOI Google Scholar
Publication history
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Acknowledgements

Publication history

Received: 08 January 2017
Revised: 10 May 2017
Accepted: 16 May 2017
Published: 19 July 2017
Issue date: February 2018

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany 2017

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC) (Nos. 11274016, 11474012, 11674005 and 11274233), the National Basic Research Program of China (973 Program) (Nos. 2013CB932604 and 2012CB619304), the Ministry of Science and Technology of China (Nos. 2016YFB0700600 and 2016YFA0301300), and open Fund of Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education of China (No. INMD-2016M03).

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