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Nano Research 2017, 10(11): 3875-3884 https://doi.org/10.1007/s12274-017-1601-8
Research Article | Issue | Published: 07 July 2017

Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au(001)

Show Author's Information Min Hong1,2,  Xiebo Zhou1,2,  Jianping Shi1,2,  Yue Qi2,  Zhepeng Zhang1,2,  Qiyi Fang1,2,  Yaguang Guo1,  Yajuan Sun3,  Zhongfan Liu2,  Yuanchang Li4,  Qian Wang1,5,  Yanfeng Zhang1,2( )
Department of Materials Science and Engineering College of Engineering Peking University Beijing 100871 China
Center for Nanochemistry (CNC) Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China
State Key Laboratory of Coal-based Low-carbon Energy ENN Group Co., Ltd.Langfang 065001 China
National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100190 China
Center for Applied Physics and Technology Peking University Beijing 100871 China
Keywords:
WS2, interfacial interaction, Au(001), striped superstructure, STM/STS
Cite this article:
Hong M, Zhou X, Shi J, et al. Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au(001). Nano Research, 2017, 10(11): 3875-3884. https://doi.org/10.1007/s12274-017-1601-8
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Abstract Full text Electronic supplementary material About this article

Revealing the structural/electronic features and interfacial interactions of monolayer MoS2 and WS2 on metals is essential to evaluating the performance of related devices. In this study, we focused on the atomic-scale features of monolayer WS2 on Au(001) synthesized via chemical vapor deposition. Scanning tunneling microscopy and spectroscopy reveal that the WS2/Au(001) system exhibits a striped superstructure similar to that of MoS2/Au(001) but weaker interfacial interactions, as evidenced by experimental and theoretical investigations. Specifically, the WS2/Au(001) band gap exhibits a relatively intrinsic value of ~ 2.0 eV. However, the band gap can gradually decrease to ~ 1.5 eV when the sample annealing temperature increases from ~ 370 to 720 ℃. In addition, the doping level (or Fermi energy) of monolayer WS2/Au(001) varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing. Briefly, this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX2 on metal substrates.


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About this article

Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au(001)

Show Author's information Min Hong1,2, Xiebo Zhou1,2, Jianping Shi1,2, Yue Qi2, Zhepeng Zhang1,2, Qiyi Fang1,2, Yaguang Guo1, Yajuan Sun3, Zhongfan Liu2, Yuanchang Li4, Qian Wang1,5, Yanfeng Zhang1,2( )
Department of Materials Science and Engineering College of Engineering Peking University Beijing 100871 China
Center for Nanochemistry (CNC) Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China
State Key Laboratory of Coal-based Low-carbon Energy ENN Group Co., Ltd.Langfang 065001 China
National Center for Nanoscience and Technology Chinese Academy of Sciences Beijing 100190 China
Center for Applied Physics and Technology Peking University Beijing 100871 China

Abstract

Revealing the structural/electronic features and interfacial interactions of monolayer MoS2 and WS2 on metals is essential to evaluating the performance of related devices. In this study, we focused on the atomic-scale features of monolayer WS2 on Au(001) synthesized via chemical vapor deposition. Scanning tunneling microscopy and spectroscopy reveal that the WS2/Au(001) system exhibits a striped superstructure similar to that of MoS2/Au(001) but weaker interfacial interactions, as evidenced by experimental and theoretical investigations. Specifically, the WS2/Au(001) band gap exhibits a relatively intrinsic value of ~ 2.0 eV. However, the band gap can gradually decrease to ~ 1.5 eV when the sample annealing temperature increases from ~ 370 to 720 ℃. In addition, the doping level (or Fermi energy) of monolayer WS2/Au(001) varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing. Briefly, this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX2 on metal substrates.

Keywords: WS2, interfacial interaction, Au(001), striped superstructure, STM/STS

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Publication history
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Acknowledgements

Publication history

Received: 16 January 2017
Revised: 11 March 2017
Accepted: 19 March 2017
Published: 07 July 2017
Issue date: November 2017

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017

Acknowledgements

Acknowledgements

We acknowledge financial support by the National Natural Science Foundation of China (Nos. 51472008 and 51290272), the National Key Research and Development Program of China (No. 2016YFA0200103), the Beijing Municipal Science and Technology Planning Project (No. Z151100003315013), the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201601) and the ENN Energy Research Institute.

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