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Research Article

Tribotronic transistor sensor for enhanced hydrogen detection

Yaokun Pang1,2,3,§, Libo Chen1,2,3,§, Guofeng Hu1,2,3, Jianjun Luo1,2,3, Zhiwei Yang1,2,3, Chi Zhang1,2 ( ), Zhong Lin Wang1,2,4 ( )
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China
National Center for Nanoscience and Technology (NCNST)Beijing 100190 China
University of Chinese Academy of SciencesBeijing 100049 China
School of Material Science and Engineering Georgia Institute of Technology AtlantaGeorgia 30332 USA

§ Yaokun Pang and Libo Chen contributed equally to this work.

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Abstract

Hydrogen detection with a high sensitivity is necessary for preventing potential explosions and fire. In this study, a novel ZnO tribotronic transistor is developed by coupling a ZnO field effect transistor (FET) and triboelectric nanogenerator in free-standing mode and is used as a sensor for hydrogen detection at room temperature. Tribotronic modulated performances of the hydrogen sensor are demonstrated by investigating its output characteristics at different sliding distances and hydrogen concentrations. By applying an external mechanical force to the device for sliding electrification, the detection sensitivity of the ZnO tribotronic transistor sensor is improved, with a significant enhancement achieved in output current by 62 times at 500 ppm hydrogen and 1 V bias voltage. This study demonstrates an extension of the applications of emerging tribotronics for gas detection and a prospective approach to improve the performance of the hydrogen sensor via human-interfacing.

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Nano Research
Pages 3857-3864

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Cite this article:
Pang Y, Chen L, Hu G, et al. Tribotronic transistor sensor for enhanced hydrogen detection. Nano Research, 2017, 10(11): 3857-3864. https://doi.org/10.1007/s12274-017-1599-y

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Received: 26 December 2016
Revised: 23 February 2017
Accepted: 19 March 2017
Published: 21 July 2017
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017