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Nano Research 2017, 10(4): 1189-1199 https://doi.org/10.1007/s12274-017-1534-2
Review Article | Issue | Published: 24 March 2017

Rapid growth of angle-confined large-domain graphene bicrystals

Show Author's Information Huaying Ren1,2,  Huan Wang1,  Li Lin1,  Miao Tang1,  Shuli Zhao1,  Bing Deng1,  Manish Kumar Priydarshi1,  Jincan Zhang1,2,  Hailin Peng1( ),  Zhongfan Liu1( )
Center for NanochemistryBeijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
Academy for Advanced Interdisciplinary StudiesPeking UniversityBeijing100871China
Keywords:
graphene, chemical vapor deposition, grain boundary, surface engineering, bicrystal, heating device
Cite this article:
Ren H, Wang H, Lin L, et al. Rapid growth of angle-confined large-domain graphene bicrystals. Nano Research, 2017, 10(4): 1189-1199. https://doi.org/10.1007/s12274-017-1534-2
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Abstract Full text Electronic supplementary material About this article

In the chemical vapor deposition growth of large-area graphene polycrystalline thin films, the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries (GBs). The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains, which can significantly affect the performance of the graphene films and impede their industrial applications. Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation. Although the bicrystal has been widely investigated for traditional bulk materials, no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals. In this study, we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu (100) substrate. Control of the density of the GBs with a misorientation angle of 30° was realized via the controllable rapid growth of sub- centimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment. The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.


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Abstract
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Electronic supplementary material
About this article

Rapid growth of angle-confined large-domain graphene bicrystals

Show Author's information Huaying Ren1,2, Huan Wang1, Li Lin1, Miao Tang1, Shuli Zhao1, Bing Deng1, Manish Kumar Priydarshi1, Jincan Zhang1,2, Hailin Peng1( ), Zhongfan Liu1( )
Center for NanochemistryBeijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
Academy for Advanced Interdisciplinary StudiesPeking UniversityBeijing100871China

Abstract

In the chemical vapor deposition growth of large-area graphene polycrystalline thin films, the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries (GBs). The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains, which can significantly affect the performance of the graphene films and impede their industrial applications. Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation. Although the bicrystal has been widely investigated for traditional bulk materials, no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals. In this study, we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu (100) substrate. Control of the density of the GBs with a misorientation angle of 30° was realized via the controllable rapid growth of sub- centimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment. The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.

Keywords: graphene, chemical vapor deposition, grain boundary, surface engineering, bicrystal, heating device

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Publication history
Copyright
Acknowledgements

Publication history

Received: 17 November 2016
Revised: 26 January 2017
Accepted: 13 February 2017
Published: 24 March 2017
Issue date: April 2017

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017

Acknowledgements

Acknowledgements

We acknowledge financial support from the National Natural Science Foundation of China (Nos. 21173004, 51520105003, 51432002, 21222303 and 51362029) and the National Basic Research Program of China (Nos. 2014CB932500, 2013CB932603, 2012CB933404, 2011CB933003, and 2011CB921904), the National Program for Support of Top-Notch Young Professionals, and Beijing Municipal Science & Technology Commission (No. Z161100002116002).

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