AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Article Link
Collect
Submit Manuscript
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article

Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics

Byung Chul Jang1Sang Yoon Yang1Hyejeong Seong2Sung Kyu Kim3Junhwan Choi2Sung Gap Im2Sung-Yool Choi1( )
School of Electrical Engineering, Graphene/2D Materials Research CenterKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
Department of Chemical and Biomolecular Engineering, Graphene/2D Materials Research CenterKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
Show Author Information

Abstract

Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1, 3, 5-trivinyl-1, 3, 5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery- powered flexible electronic systems.

Graphical Abstract

Electronic Supplementary Material

Download File(s)
nr-10-7-2459_ESM.pdf (1.7 MB)

References

【1】
【1】
 
 
Nano Research
Pages 2459-2470

{{item.num}}

Comments on this article

Go to comment

< Back to all reports

Review Status: {{reviewData.commendedNum}} Commended , {{reviewData.revisionRequiredNum}} Revision Required , {{reviewData.notCommendedNum}} Not Commended Under Peer Review

Review Comment

Close
Close
Cite this article:
Jang BC, Yang SY, Seong H, et al. Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics. Nano Research, 2017, 10(7): 2459-2470. https://doi.org/10.1007/s12274-017-1449-y

1343

Views

45

Crossref

N/A

Web of Science

45

Scopus

0

CSCD

Received: 27 October 2016
Revised: 24 December 2016
Accepted: 30 December 2016
Published: 12 April 2017
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017