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Nano Research 2017, 10(2): 643-651 https://doi.org/10.1007/s12274-016-1323-3
Research Article | Issue | Published: 01 December 2016

Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition

Show Author's Information Hengchang Liu1,2,3,4,  Yuanhu Zhu2( ),  Qinglong Meng2,  Xiaowei Lu2,  Shuang Kong2,  Zhiwei Huang2,  Peng Jiang2,  Xinhe Bao1,2
Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Hi-Tech Park, Pudong, Shanghai 200120, China
State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
University of Chinese Academy of Sciences, Beijing 100039, China
ShanghaiTech University, 100 Haike Road, Pudong, Shanghai 201210, China
Keywords:
MoS2, monolayer, carrier gas flow rate, modified CVD
Cite this article:
Liu H, Zhu Y, Meng Q, et al. Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition. Nano Research, 2017, 10(2): 643-651. https://doi.org/10.1007/s12274-016-1323-3
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Abstract Full text Electronic supplementary material About this article

Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time.


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Electronic supplementary material
About this article

Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition

Show Author's information Hengchang Liu1,2,3,4, Yuanhu Zhu2( ), Qinglong Meng2, Xiaowei Lu2, Shuang Kong2, Zhiwei Huang2, Peng Jiang2, Xinhe Bao1,2
Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Hi-Tech Park, Pudong, Shanghai 200120, China
State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
University of Chinese Academy of Sciences, Beijing 100039, China
ShanghaiTech University, 100 Haike Road, Pudong, Shanghai 201210, China

Abstract

Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time.

Keywords: MoS2, monolayer, carrier gas flow rate, modified CVD

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Publication history
Copyright
Acknowledgements

Publication history

Received: 24 August 2016
Revised: 07 October 2016
Accepted: 08 October 2016
Published: 01 December 2016
Issue date: February 2017

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This work is financially supported by the National Natural Science Foundation of China (Nos. 21273228 and 51290272) and Chinese Postdoctoral Science Foundation (No. 2016M591460).

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