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Optical emission efficiency of two-dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameters affecting their optoelectronic performance. The optimization of the growth parameters by chemical vapor deposition (CVD) to achieve optoelectronic-grade quality TMDs is, therefore, highly desirable. Here, we present a systematic photoluminescence (PL) spectroscopic approach to assess the intrinsic optical and crystalline quality of CVD grown MoS2 (CVD MoS2). We propose the use of the intensity ratio between the PL measured in air and vacuum as an effective way to monitor the intrinsic optical quality of CVD MoS2. Low-temperature PL measurements are also used to evaluate the structural defects in MoS2, via defect-associated bound exciton emission, which well correlates with the field-effect carrier mobility of MoS2 grown at different temperatures. This work therefore provides a sensitive, noninvasive method to characterize the optical properties of TMDs, allowing the tuning of the growth parameters for the development of optoelectronic devices.
Duan, X. D.; Wang, C.; Pan, A. L.; Yu, R. Q.; Duan, X. F. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: Opportunities and challenges. Chem. Soc. Rev. 2015, 44, 8859−8876.
Bhimanapati, G. R.; Lin, Z.; Meunier, V.; Jung, Y.; Cha, J.; Das, S.; Xiao, D.; Son, Y.; Strano, M. S.; Cooper, V. R. et al. Recent advances in two-dimensional materials beyond graphene. ACS Nano 2015, 9, 11509−11539.
Mak, K. F.; Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photonics 2016, 10, 216–226.
Kang, K.; Xie, S.; Huang, L. J.; Han, Y. M.; Huang, P. Y.; Mak, K. F.; Kim, C.-J.; Muller, D.; Park, J. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656−660.
Lopez-Sanchez, O.; Lembke, D.; Kayci, M.; Radenovic, A.; Kis, A. Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 2013, 8, 497–501.
Kufer, D.; Konstantatos, G. Highly sensitive, encapsulated MoS2 photodetector with gate controllable gain and speed. Nano Lett. 2015, 15, 7307–7313.
Bernardi, M.; Palummo, M.; Grossman, J. C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 2013, 13, 3664–3670.
Splendiani, A.; Sun, L.; Zhang, Y. B.; Li, T. S.; Kim, J.; Chim, C. Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271–1275.
Gong, Y. J.; Ye, G. L.; Lei, S. D.; Shi, G.; He, Y. M.; Lin, J. H.; Zhang, X.; Vajtai, R.; Pantelides, S. T.; Zhou, W. et al. Synthesis of millimeter-scale transition metal dichalcogenides single crystals. Adv. Funct. Mater. 2016, 26, 2009–2015.
Shi, Y. M.; Li, H.; Li, L. J. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques. Chem. Soc. Rev. 2015, 44, 2744–2756.
Gutiérrez, H. R.; Perea-López, N.; Elías, A. L.; Berkdemir, A.; Wang, B.; Lv, R. T.; López-Urías, F.; Crespi, V. H.; Terrones, H.; Terrones, M. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. Nano Lett. 2013, 13, 3447–3454.
Hong, J. H.; Hu, Z. X.; Probert, M.; Li, K.; Lv, D. H.; Yang, X. N.; Gu, L.; Mao, N. N.; Feng, Q. L.; Xie, L. M. et al. Exploring atomic defects in molybdenum disulphide monolayers. Nat. Commun. 2015, 6, 6293.
Zhou, W.; Zou, X. L.; Najmaei, S.; Liu, Z.; Shi, Y. M.; Kong, J.; Lou, J.; Ajayan, P. M.; Yakobson, B. I.; Idrobo, J. C. Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 2013, 13, 2615–2622.
Mouri, S.; Miyauchi, Y; Matsuda, K. Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett. 2013, 13, 5944–5948.
Amani, M.; Lien, D. H.; Kiriya, D.; Xiao, J.; Azcatl, A.; Noh, J.; Madhvapathy, S. R.; Addou, R.; Santosh, K. C.; Dubey, M. et al. Near-unity photoluminescence quantum yield in MoS2. Science 2015, 350, 1065–1068.
Tongay, S.; Zhou, J.; Ataca, C.; Liu, J.; Kang, J. S.; Matthews, T. S.; You, L.; Li, J. B.; Grossman, J. C.; Wu, J. Q. Broad-range modulation of light emission in two- dimensional semiconductors by molecular physisorption gating. Nano Lett. 2013, 13, 2831–2836.
Castellanos-Gomez, A.; Roldán, R.; Cappelluti, E.; Buscema, M.; Guinea, F.; van der Zant, H. S. J.; Steele, G. A. Local strain engineering in atomically thin MoS2. Nano Lett. 2013, 13, 5361–5366.
Nan, H. Y.; Wang, Z. L.; Wang, W. H.; Liang, Z.; Lu, Y.; Chen, Q.; He, D. W.; Tan, P. H.; Miao, F.; Wang, X. R. et al. Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding. ACS Nano 2014, 8, 5738–5745.
Tongay, S.; Suh, J.; Ataca, C.; Fan, W.; Luce, A.; Kang, J. S.; Liu, J.; Ko, C.; Raghunathanan R.; Zhou J. et al. Defects activated photoluminescence in two-dimensional semiconductors: Interplay between bound, charged, and free excitons. Sci. Rep. 2013, 3, 2657.
Wang, L.; Meric, I.; Huang, P. Y.; Gao, Q.; Gao, Y.; Tran, H.; Taniguchi, T.; Watanabe, K.; Campos, L. M.; Muller, D. A. et al. One-dimensional electrical contact to a two- dimensional material. Science 2013, 342, 614–617.
Lee, Y. H.; Zhang, X. Q.; Zhang, W. J.; Chang, M. T.; Lin, C. T.; Chang, K. D.; Yu, Y. C.; Wang, J. T. W.; Chang, C. S.; Li, L. J. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 2012, 24, 2320–2325.
van der Zande, A. M.; Huang, P. Y.; Chenet, D. A.; Berkelbach, T. C.; You, Y. M.; Lee, G. H.; Heinz, T. F.; Reichman, D. R.; Muller, D. A.; Hone, J. C. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 2013, 12, 554–561.
Najmaei, S.; Liu, Z.; Zhou, W.; Zou, X. L.; Shi, G.; Lei, S. D.; Yakobson, B. I.; Idrobo, J. C.; Ajayan, P. M; Lou, J. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater. 2013, 12, 754–759.
Scheuschner, N.; Ochedowski, O.; Kaulitz, A. M.; Gillen, R.; Schleberger, M.; Maultzsch, J. Photoluminescence of freestanding single- and few-layer MoS2. Phys. Rev. B. 2014, 89, 125406.
Mak, K. F.; He, K. L.; Lee, C.; Lee, G. H.; Hone, J.; Heinz, T. F.; Shan, J. Tightly bound trions in monolayer MoS2. Nat. Mater. 2013, 12, 207–211.
Ross, J. S.; Wu, S. F.; Yu, H. Y.; Ghimire, N. J.; Jones, A. M.; Aivazian, G.; Yan, J. Q.; Mandrus, D. G.; Xiao, D.; Yao, W. et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat. Commun. 2013, 4, 1474.
Qiu, H.; Xu, T.; Wang, Z. L; Ren, W.; Nan, H. Y.; Ni, Z. H.; Chen, Q.; Yuan, S. J.; Miao, F.; Song, F. Q. et al. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun. 2013, 4, 2642.
Shi, H. Y.; Yan, R. S.; Bertolazzi, S.; Brivio, J.; Gao, B.; Kis, A.; Jena, D.; Xing, H. G.; Huang, L. B. Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals. ACS Nano 2013, 7, 1072–1080.
Lin, Z.; Carvalho, B. R.; Kahn, E.; Lv, R. T.; Rao, R.; Terrones, H.; Pimenta, M. A.; Terrones, M. Defect engineering of two-dimensional transition metal dichalcogenides. 2D Mater. 2016, 3, 022002.
Najmaei, S.; Yuan, J. T.; Zhang, J.; Ajayan, P.; Lou, J. Synthesis and defect investigation of two-dimensional molybdenum disulfide atomic layers. Acc. Chem. Res. 2015, 48, 31–40.
Yu, Z. G.; Zhang, Y. W.; Yakobson, B. I. An anomalous formation pathway for dislocation-sulfur vacancy complexes in polycrystalline monolayer MoS2. Nano Lett. 2015, 15, 6855–6861.
Li, H.; Tsai, C.; Koh, A. L.; Cai, L. L.; Contryman, A. W.; Fragapane, A. H.; Zhao, J. H.; Han, H. S.; Manoharan, H. C.; Abild-Pedersen, F. et al. Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies. Nat. Mater. 2016, 15, 48–53.
Jeong, H. Y.; Lee, S. Y.; Ly, T. H.; Han, G. H.; Kim, H.; Nam, H.; Jiong, Z.; Shin, B. G.; Yun, S. J.; Kim, J. et al. Visualizing point defects in transition-metal dichalcogenides using optical microscopy. ACS Nano 2016, 10, 770–777.
Wu, Z. T.; Luo, Z. Z.; Shen, Y. T.; Zhao, W. W.; Wang, W. H.; Nan, H. Y.; Guo, X. T.; Sun, L. T.; Wang, X. R.; You, Y. M. et al. Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation. Nano Res. 2016, 9, 3622–3631.
Lee, Y.; Park, S.; Kim, H.; Han, G. H.; Lee, Y. H.; Kim, J. Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging. Nanoscale 2015, 7, 11909–11914.
Wang, H. N.; Zhang, C. J.; Rana, F. Ultrafast dynamics of defect-assisted electron–hole recombination in monolayer MoS2. Nano Lett. 2015, 15, 339–345.
Radisavljevic, B.; Kis, A. Mobility engineering and a metal–insulator transition in monolayer MoS2. Nat. Mater. 2013, 12, 815–820.
Yu, Z. H.; Pan, Y. M.; Shen, Y. T.; Wang, Z. L.; Ong, Z. Y.; Xu, T.; Xin, R.; Pan, L. J.; Wang, B. G.; Sun, L. T. et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat. Commun. 2014, 5, 5290.
Schmidt, H.; Wang, S. F.; Chu, L. Q.; Toh, M.; Kumar, R.; Zhao, W. J.; Castro Neto, A. H.; Martin, J.; Adam, S.; Özyilmaz, B. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 2014, 14, 1909–1913.
Zhu, W. J.; Low, T.; Lee, Y. H.; Wang, H.; Farmer, D. B.; Kong, J.; Xia, F. N.; Avouris, P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 2014, 5, 3087.
Kim, I. S.; Sangwan, V. K.; Jariwala, D.; Wood, J. D.; Park, S.; Chen, K. S.; Shi, F. Y.; Ruiz-Zepeda, F.; Ponce, A.; Jose-Yacaman, M. et al. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2. ACS Nano 2014, 8, 10551–10558.
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