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Nano Research 2017, 10(5): 1608-1617 https://doi.org/10.1007/s12274-016-1319-z
Research Article | Issue | Published: 08 November 2016

Probing the intrinsic optical quality of CVD grown MoS2

Show Author's Information Amina Zafar1,§,  Haiyan Nan1,§,  Zainab Zafar2,  Zhangting Wu1,  Jie Jiang1,  Yumeng You2( ),  Zhenhua Ni1( )
Department of Physics and Key Laboratory of MEMS of the Ministry of Education Southeast UniversityNanjing 211189 China
Ordered Matter Science Research Center Southeast UniversityNanjing 211189 China

§ These authors contributed equally to this work.

Keywords:
MoS2, chemical vapor deposition, photoluminescence, transition metal dichalcogenides, mobility, defect
Cite this article:
Zafar A, Nan H, Zafar Z, et al. Probing the intrinsic optical quality of CVD grown MoS2. Nano Research, 2017, 10(5): 1608-1617. https://doi.org/10.1007/s12274-016-1319-z
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Abstract Full text Electronic supplementary material About this article

Optical emission efficiency of two-dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameters affecting their optoelectronic performance. The optimization of the growth parameters by chemical vapor deposition (CVD) to achieve optoelectronic-grade quality TMDs is, therefore, highly desirable. Here, we present a systematic photoluminescence (PL) spectroscopic approach to assess the intrinsic optical and crystalline quality of CVD grown MoS2 (CVD MoS2). We propose the use of the intensity ratio between the PL measured in air and vacuum as an effective way to monitor the intrinsic optical quality of CVD MoS2. Low-temperature PL measurements are also used to evaluate the structural defects in MoS2, via defect-associated bound exciton emission, which well correlates with the field-effect carrier mobility of MoS2 grown at different temperatures. This work therefore provides a sensitive, noninvasive method to characterize the optical properties of TMDs, allowing the tuning of the growth parameters for the development of optoelectronic devices.


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About this article

Probing the intrinsic optical quality of CVD grown MoS2

Show Author's information Amina Zafar1,§, Haiyan Nan1,§, Zainab Zafar2, Zhangting Wu1, Jie Jiang1, Yumeng You2( ), Zhenhua Ni1( )
Department of Physics and Key Laboratory of MEMS of the Ministry of Education Southeast UniversityNanjing 211189 China
Ordered Matter Science Research Center Southeast UniversityNanjing 211189 China

§ These authors contributed equally to this work.

Abstract

Optical emission efficiency of two-dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameters affecting their optoelectronic performance. The optimization of the growth parameters by chemical vapor deposition (CVD) to achieve optoelectronic-grade quality TMDs is, therefore, highly desirable. Here, we present a systematic photoluminescence (PL) spectroscopic approach to assess the intrinsic optical and crystalline quality of CVD grown MoS2 (CVD MoS2). We propose the use of the intensity ratio between the PL measured in air and vacuum as an effective way to monitor the intrinsic optical quality of CVD MoS2. Low-temperature PL measurements are also used to evaluate the structural defects in MoS2, via defect-associated bound exciton emission, which well correlates with the field-effect carrier mobility of MoS2 grown at different temperatures. This work therefore provides a sensitive, noninvasive method to characterize the optical properties of TMDs, allowing the tuning of the growth parameters for the development of optoelectronic devices.

Keywords: MoS2, chemical vapor deposition, photoluminescence, transition metal dichalcogenides, mobility, defect

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Publication history
Copyright
Acknowledgements

Publication history

Received: 02 September 2016
Revised: 27 September 2016
Accepted: 05 October 2016
Published: 08 November 2016
Issue date: May 2017

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This work was supported by National Natural Science Foundation of China (Nos. 61422503, 21541013, and 61376104), Natural Science Foundation of Jiangsu Province (No. BK20150596), the open research funds of Key Laboratory of MEMS of Ministry of Education (SEU, China), and the Fundamental Research Funds for the Central Universities.

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