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Nano Research 2017, 10(2): 546-555 https://doi.org/10.1007/s12274-016-1312-6
Research Article | Issue | Published: 08 December 2016

Anisotropic optical and electronic properties of two-dimensional layered germanium sulfide

Show Author's Information Dezhi Tan1( ),  Hong En Lim1,  Feijiu Wang1,  Nur Baizura Mohamed1,  Shinichiro Mouri1,  Wenjin Zhang1,  Yuhei Miyauchi1,  Mari Ohfuchi2,  Kazunari Matsuda1( )
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan
Keywords:
photoluminescence, 2D layered materials, germanium sulfide, anisotropic optical property, polarized optical spectroscopy
Cite this article:
Tan D, Lim HE, Wang F, et al. Anisotropic optical and electronic properties of two-dimensional layered germanium sulfide. Nano Research, 2017, 10(2): 546-555. https://doi.org/10.1007/s12274-016-1312-6
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Abstract Full text Electronic supplementary material About this article

Two-dimensional (2D) layered materials, transition-metal dichalcogenides, and black phosphorus have attracted considerable interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to the remarkable optical properties of these materials and their prospects for new devices. Herein, we report the anisotropic and thickness-dependent optical properties of a 2D layered monochalcogenide of germanium sulfide (GeS). Three Raman-scattering peaks corresponding to the B3g, Ag1, and Ag2 modes with a strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at ~1.66 eV that originates from the direct optical transition in GeS at room temperature. The polarization-dependent characteristics of the PL, which are revealed for the first time, along with the demonstration of anisotropic absorption, indicate an obvious anisotropic optical transition near the band edge of GeS, which is supported by density functional theory calculations. The significantly thickness-dependent PL is observed and discussed. This anisotropic layered GeS presents opportunities for the discovery of new physical phenomena and will find applications that exploit its anisotropic properties, such as polarization-sensitive photodetectors.


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About this article

Anisotropic optical and electronic properties of two-dimensional layered germanium sulfide

Show Author's information Dezhi Tan1( ), Hong En Lim1, Feijiu Wang1, Nur Baizura Mohamed1, Shinichiro Mouri1, Wenjin Zhang1, Yuhei Miyauchi1, Mari Ohfuchi2, Kazunari Matsuda1( )
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan

Abstract

Two-dimensional (2D) layered materials, transition-metal dichalcogenides, and black phosphorus have attracted considerable interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to the remarkable optical properties of these materials and their prospects for new devices. Herein, we report the anisotropic and thickness-dependent optical properties of a 2D layered monochalcogenide of germanium sulfide (GeS). Three Raman-scattering peaks corresponding to the B3g, Ag1, and Ag2 modes with a strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at ~1.66 eV that originates from the direct optical transition in GeS at room temperature. The polarization-dependent characteristics of the PL, which are revealed for the first time, along with the demonstration of anisotropic absorption, indicate an obvious anisotropic optical transition near the band edge of GeS, which is supported by density functional theory calculations. The significantly thickness-dependent PL is observed and discussed. This anisotropic layered GeS presents opportunities for the discovery of new physical phenomena and will find applications that exploit its anisotropic properties, such as polarization-sensitive photodetectors.

Keywords: photoluminescence, 2D layered materials, germanium sulfide, anisotropic optical property, polarized optical spectroscopy

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Publication history
Copyright
Acknowledgements

Publication history

Received: 03 August 2016
Revised: 05 October 2016
Accepted: 06 October 2016
Published: 08 December 2016
Issue date: February 2017

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This study was supported by the Grant-in-Aid for JSPS KAKENHI (Nos. 25400324, 24681031, 15K13500, 26107522, 25246010, and 15F15313) and by Precursory Research for Embryonic Science and Technology (PRESTO) from the Japan Science and Technology Agency (JST). The authors thank E. Iso and Y. Nakata for support of polarized Raman spectroscopy.

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