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Nano Research 2017, 10(1): 276-283 https://doi.org/10.1007/s12274-016-1286-4
Research Article | Issue | Published: 04 October 2016

High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors

Show Author's Information Zhixin Li1,  Dan Xie1( ),  Ruixuan Dai1,  Jianlong Xu2,  Yilin Sun1,  Mengxing Sun1,  Cheng Zhang1,  Xian Li1
Institute of Microelectronics,Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University,Beijing,100084,China;
Institute of Functional Nano and Soft Materials (FUNSOM),Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University,Suzhou,215123,China;
Keywords:
MoS2, electrical properties, heterogeneous inverter, single-walled carbon-nanotube (SWCNT), high voltage gain
Cite this article:
Li Z, Xie D, Dai R, et al. High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors. Nano Research, 2017, 10(1): 276-283. https://doi.org/10.1007/s12274-016-1286-4
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Abstract Full text About this article

Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide (MoS2) and single-walled carbon-nanotube (SWCNT) networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a back- gated structure. Field-effect transistors (FETs) based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit Vin-Vout signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios (W/L) of the MoS2-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.


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About this article

High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors

Show Author's information Zhixin Li1, Dan Xie1( ), Ruixuan Dai1, Jianlong Xu2, Yilin Sun1, Mengxing Sun1, Cheng Zhang1, Xian Li1
Institute of Microelectronics,Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University,Beijing,100084,China;
Institute of Functional Nano and Soft Materials (FUNSOM),Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University,Suzhou,215123,China;

Abstract

Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide (MoS2) and single-walled carbon-nanotube (SWCNT) networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a back- gated structure. Field-effect transistors (FETs) based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit Vin-Vout signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios (W/L) of the MoS2-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.

Keywords: MoS2, electrical properties, heterogeneous inverter, single-walled carbon-nanotube (SWCNT), high voltage gain

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Publication history
Copyright
Acknowledgements

Publication history

Received: 20 June 2016
Revised: 11 September 2016
Accepted: 12 September 2016
Published: 04 October 2016
Issue date: January 2017

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 51672154, 51372130, and 61401251), Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201517), and Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (No. KFJJ201402).

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